Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7353D1TRPBF

Name: IRF7353D1TRPBF
Brand: Infineon Technologies
SKU: IRF7353D1TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7353D1TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7353D1TRPBF.pdf

Description:: MOSFET N-CH 30V 6.5A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,021

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7353D1TRPBF from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel Power MOSFET and Schottky diode in a single SO-8 package, designed for synchronous buck converter low-side switching. It features 30 V V_DSS, 23 mΩ R_DS(on) @ 10 V_GS, 0.39 V Schottky forward voltage at 1 A/125°C, and 62.5 °C/W junction-to-ambient thermal resistance - enabling high-efficiency power conversion in space-constrained portable DC-DC regulators.

For engineers reviewing the IRF7353D1TRPBF datasheet, IRF7353D1TRPBF pinout, IRF7353D1TRPBF application, or IRF7353D1TRPBF equivalent, key selection criteria include verified R_DS(on) at 4.5 V_GS, integrated body diode recovery performance, SO-8 thermal derating behavior, and FETKY co-package timing alignment between MOSFET turn-off and Schottky conduction.

Technical Context

This FETKY device integrates a Generation 5 HEXFET MOSFET with a low-V_F Schottky rectifier on a customized SO-8 leadframe optimized for thermal dissipation. The MOSFET delivers 5.8 A continuous drain current at 25°C with gate threshold voltage of 1.0–2.5 V and total gate charge of 22 nC (typ), while the Schottky exhibits 0.39 V forward drop at 1.0 A/125°C and 58 nC reverse recovery charge.

The co-package eliminates PCB trace inductance between switch and freewheeling diode, reducing voltage spikes and EMI in high-frequency (>500 kHz) buck topologies. Thermal design leverages the modified SO-8 footprint's 62.5 °C/W R_θJA, with linear derating of 16 mW/°C above 70°C ambient - validated under FR-4 board mounting per JEDEC MS-012AA.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters
R_DS(on) @ 10 V_GS	23 mΩ (typ) - Enables <150 mW conduction loss at 5.8 A, critical for thermally constrained mobile applications
V_F (Schottky)	0.39 V @ 1.0 A, 125°C - Reduces freewheeling loss by ~40% vs. standard silicon diodes in 1–3 A buck stages
Q_g	22 nC (typ) - Supports efficient 1–2 MHz switching with moderate gate drive strength (e.g., 1 A peak)
R_θJA	62.5 °C/W - Defines maximum power dissipation (2.0 W @ 25°C) and thermal headroom on standard FR-4 PCBs
I_D (cont)	6.5 A @ 25°C - Specifies safe DC current handling before thermal shutdown in unforced-air environments
trr (body diode)	45 ns (typ) - Limits reverse recovery energy loss during hard-switched transitions in non-synchronous mode

Pinout & Package

IRF7353D1TRPBF uses a modified SO-8 (JEDEC MS-012AA) package with enhanced thermal leadframe. Pin numbering follows standard SO-8 top-view orientation (pin 1 at top-left corner).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (MOSFET) / Cathode (Schottky)	Common low-side return node; electrically tied internally - must be routed to ground plane for optimal thermal and EMI performance
5, 6, 7, 8	Drain (MOSFET) / Anode (Schottky)	Shared high-side connection to inductor node; requires low-inductance layout to minimize switching overshoot
Gate	MOSFET control terminal	Pin 3 is gate; isolated from source/drain - requires RC snubber if dv/dt exceeds 3600 V/μs during turn-off

Key Features

Feature	Design Value
Co-packaged MOSFET + Schottky	Eliminates interconnect inductance, reducing voltage ringing and improving efficiency in >500 kHz buck converters
Generation 5 HEXFET technology	23 mΩ R_DS(on) @ 10 V_GS enables higher current density than prior generations in same SO-8 footprint
Low-V_F Schottky (0.39 V)	Minimizes conduction loss during freewheeling phase, directly increasing light-load efficiency in battery-powered systems
Custom SO-8 thermal leadframe	62.5 °C/W R_θJA improves power handling by ~25% over standard SO-8 packages under identical PCB conditions
Lead-free (PbF) construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1)

Applications

Smartphone PMIC Buck Stages

USB-C PD Portable Chargers

Use Scenario: Step-down conversion from 12 V input to 3.3 V core rail in multi-rail smartphone power management ICs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 1.5 MHz buck converter; switches in anti-phase with high-side MOSFET.

Use Value: 0.39 V Schottky V_F reduces freewheeling loss by 0.39 W at 1 A, extending battery runtime by 4–6% versus discrete silicon diode solutions.

Use Scenario: Secondary-side 5 V/3 A output stage in compact 30 W USB-C PD charger designs.

IC Role / Device Role / Timing Role: Integrated FETKY replaces separate MOSFET + Schottky pair, simplifying layout and reducing BOM count.

Use Value: Co-packaged structure cuts PCB area by 35% and eliminates 2x parasitic inductance, enabling stable operation at 750 kHz without added snubbers.

Industrial IoT Sensor Nodes

Wireless Headset Battery Management

Use Scenario: 3.3 V supply generation from Li-ion battery (3.0–4.2 V) in always-on environmental sensor modules.

IC Role / Device Role / Timing Role: Synchronous buck low-side switch operating in pulse-skipping mode at light loads.

Use Value: 1.0 V gate threshold allows direct drive from 1.8 V microcontroller GPIO, eliminating level-shifter and saving 0.5 mm² PCB area.

Use Scenario: Dual-output (1.2 V + 3.3 V) power delivery for Bluetooth SoC and audio codec in ultra-thin earbuds.

IC Role / Device Role / Timing Role: Compact FETKY enables dual-buck layout within 8 mm × 8 mm PCB envelope.

Use Value: 23 mΩ R_DS(on) limits conduction loss to <80 mW at 1.5 A, preventing thermal throttling in sealed acoustic enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar FETKY buck regulator applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	30 V, 21 mΩ R_DS(on), 0.42 V Schottky V_F, 55 nC Q_g, same SO-8	Slightly lower R_DS(on) but higher Q_g increases gate drive loss above 1 MHz	Preferred for high-current, low-frequency (<500 kHz) industrial supplies where gate loss is secondary
DMN3022LSD-13	30 V, 22 mΩ R_DS(on), no integrated Schottky - requires external diode	Lacks co-package benefits; adds 0.3–0.5 ns timing skew and 15–20 pH loop inductance	Only suitable when Schottky integration is unnecessary or when discrete optimization justifies extra layout complexity

Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7353D1TRPBF offers the lowest combined conduction + recovery loss in 500 kHz–2 MHz buck converters due to its balanced 22 nC Q_g and 0.39 V V_F, making it optimal for portable electronics where thermal density and efficiency at light load are critical.

Availability

IRF7353D1TRPBF is available at Aetrix Electronics and suitable for smartphone PMIC buck stages, USB-C PD portable chargers, and industrial IoT sensor nodes requiring stable component supply across production lifecycles.

Supply support for IRF7353D1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The FETKY product line was developed to replace discrete MOSFET + diode pairs in high-frequency DC-DC converters, targeting space-constrained portable electronics and energy-efficient power supplies.

FAQ

What is the maximum recommended gate drive voltage for IRF7353D1TRPBF?

The absolute maximum gate-to-source voltage is ±20 V, but the device is fully characterized and optimized for 10 V drive. Using 12 V provides marginal R_DS(on) improvement (~1.5%) but increases gate oxide stress and does not justify the reliability trade-off. For 3.3 V or 5 V logic-level systems, operation at 4.5 V_GS yields 32 mΩ R_DS(on), confirmed in datasheet Figure 6.

Can IRF7353D1TRPBF be used in non-synchronous buck configurations?

Yes - the integrated Schottky diode supports asynchronous operation. At 1 A, its 0.39 V forward drop at 125°C is significantly lower than typical silicon body diodes (~0.8–1.1 V), reducing conduction loss by up to 45%. However, reverse recovery time (45 ns typ) is slower than dedicated Schottky diodes, so synchronous mode is preferred above 500 kHz.

How does the thermal performance of IRF7353D1TRPBF compare to standard SO-8 MOSFETs?

This part uses a customized SO-8 leadframe that achieves 62.5 °C/W R_θJA on FR-4 - ~20% better than conventional SO-8 packages (typically 75–80 °C/W). The improvement comes from thicker copper leads and optimized internal die attach, allowing 2.0 W dissipation at 25°C ambient versus ~1.6 W for standard equivalents, verified in Figure 9's transient thermal impedance curves.

Is IRF7353D1TRPBF suitable for automotive applications?

No - the device is qualified for the Consumer market per Infineon's documentation (page 8), with operating temperature range of –55°C to +150°C but no AEC-Q101 qualification or automotive-grade screening. Its 150°C max junction temperature aligns with industrial use, but automotive designs require documented PPAP, failure analysis reports, and extended temperature validation not provided for this part.

IRF7353D1TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 25 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7353D1TRPBF FAQ

1.How can I place an order for IRF7353D1TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7353D1TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7353D1TRPBF reliable?

The price and inventory of IRF7353D1TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7353D1TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7353D1TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7353D1TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7353D1TRPBF?

IRF7353D1TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7353D1TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7353D1TRPBF?

For technical support, including IRF7353D1TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7353D1TRPBF requirements.

6.How does Aetrix verify that IRF7353D1TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7353D1TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7353D1TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7353D1TRPBF?

All IRF7353D1TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7353D1TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7353D1TRPBF part is unused and in its original packaging.

Return procedure for IRF7353D1TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.