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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7353D2

Name: IRF7353D2
Brand: Infineon Technologies
SKU: IRF7353D2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7353D2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7353D2.pdf

Description:: MOSFET N-CH 30V 6.5A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7353D2 from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel HEXFET® power MOSFET and low-V_F Schottky diode in a single SO-8 package, designed for synchronous buck regulator high-side/low-side switching. It delivers R_DS(on) = 0.023 Ω @ V_GS = 10 V, Schottky V_F = 0.52 V @ I_F = 3.0 A, T_J = 125 °C, and supports 6.5 A continuous drain current at 25 °C - enabling compact, high-efficiency DC-DC conversion in portable power supplies.

For engineers reviewing the IRF7353D2 datasheet, IRF7353D2 pinout, IRF7353D2 application, or IRF7353D2 equivalent, key selection criteria include verified co-pack thermal coupling, body-diode recovery performance (t_rr = 45–68 ns), gate charge (Q_g = 22–33 nC), and SO-8 footprint compatibility with board-level thermal management requirements.

Technical Context

This FETKY™ device integrates a Generation 5 HEXFET MOSFET and a Schottky rectifier on a shared leadframe to minimize parasitic inductance and improve switching efficiency. The MOSFET features ultra-low R_DS(on) and fast switching (t_d(on) = 8.1–12 ns, t_f = 18–26 ns), while the Schottky diode provides low forward voltage (V_F = 0.52 V @ 125 °C) and negligible reverse recovery charge (Q_rr = 58–87 nC).

The SO-8 package uses a customized leadframe for enhanced thermal resistance (R_θJA = 62.5 °C/W) and supports vapor-phase, infrared, and wave soldering. Its dual-die construction enables independent control of the MOSFET gate while sharing source/drain terminals with the Schottky anode/cathode for optimized layout in buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for buck converter input stage up to 24 V nominal rails.
R_DS(on)	0.023 Ω (typ.) @ V_GS = 10 V - Enables <150 mW conduction loss at 6 A, critical for thermally constrained PCBs.
Schottky V_F	0.52 V @ I_F = 3.0 A, T_J = 125 °C - Reduces diode conduction loss by ~30% vs. standard silicon body diodes in low-V_OUT designs.
Q_g	22 nC (typ.) - Supports efficient 1–2 MHz switching with moderate gate drive strength (e.g., 1 A peak).
t_rr	45 ns (typ.) - Minimizes switching loss and EMI during dead-time transitions in synchronous rectification.
P_D @ T_A = 25 °C	2.0 W - Defines maximum steady-state power dissipation on standard FR-4 without heatsinking.
T_J Range	−55 to +150 °C - Qualified for industrial and extended-temperature portable electronics operation.

Pinout & Package

SO-8 package per JEDEC MS-012AA, with modified leadframe for improved thermal performance. Dimensions: 4.98 × 6.20 × 1.75 mm (L × W × H); 1.27 mm pitch; RoHS-compliant matte tin lead finish.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal for MOSFET; requires 10 V for full enhancement; compatible with 3.3 V/5 V logic when operated in linear region.
2 (S)	Source	MOSFET source and Schottky cathode common node; serves as power return path and reference for gate drive.
3 (K)	Schottky Cathode	Internally tied to Pin 2 (S); not independently accessible - confirms integrated co-pack topology.
4 (K)	Schottky Cathode	Second cathode connection; paralleled with Pin 3 to reduce bondwire inductance and improve current sharing.
5 (D)	Drain	MOSFET drain and Schottky anode common node; carries high-side switch current and freewheeling current in buck configuration.
6 (D)	Drain	Second drain connection; paralleled with Pin 5 to lower R_DS(on) and thermal impedance under high-current pulse conditions.
7 (A)	Anode	Schottky anode - internally connected to Pin 5/6 (D); not externally isolated; confirms monolithic integration.
8 (A)	Anode	Second anode connection; electrically redundant with Pins 5/6 to enhance current handling and thermal spreading.

Key Features

Feature	Design Value
Co-packaged MOSFET + Schottky	Eliminates discrete layout mismatch, reduces PCB area by >40% vs. separate devices in 3×3 mm² footprint.
Generation 5 HEXFET technology	Delivers 23% lower R_DS(on) than prior gen at same die size, enabling higher current density in portable designs.
Low-Q_g/Q_gd ratio	Q_gd/Q_g ≈ 29% (6.4/22 nC) - improves controllability during Miller plateau and reduces shoot-through risk.
Thermally enhanced SO-8	Custom leadframe lowers R_θJA by 15% vs. standard SO-8, supporting 2.0 W dissipation without thermal vias.
Body-diode-free Schottky integration	Replaces lossy intrinsic MOSFET body diode with 0.52 V Schottky, cutting freewheeling loss by >50% at 1 A.

Applications

USB-C PD Power Delivery

Smartphone PMIC Buck Stages

Use Scenario: High-efficiency 5–20 V input to 3.3 V/1.8 V core rail conversion in USB-C PD sink adapters.

IC Role / Device Role: Low-side synchronous rectifier in dual-phase buck converter, operating at 1.2 MHz with 30 ns dead time.

Use Value: Achieves >94% efficiency at 3 A load due to 0.023 Ω R_DS(on) and 0.52 V Schottky V_F, reducing thermal stress on compact PCBs.

Use Scenario: Core voltage regulation for application processors in battery-powered smartphones.

IC Role / Device Role: Integrated high-side/low-side switch pair in 2-phase interleaved buck, driven by TI TPS62480 controller.

Use Value: Enables 92% peak efficiency at 4 A per phase with <15 °C junction rise, meeting JEDEC JESD51-2 transient thermal limits.

Industrial IoT Sensor Node PSU

Wireless Earbud Charging Case

Use Scenario: 12 V input to 3.3 V/5 V dual-rail supply for LoRaWAN edge nodes with intermittent 500 mA peak loads.

IC Role / Device Role: Primary switching element in compact 12 mm² buck module, operating in forced PWM mode.

Use Value: Delivers stable output with <12 mV ripple using 22 µH inductor, leveraging low C_iss (650 pF) for clean gate drive waveform integrity.

Use Scenario: 5 V USB input to 4.2 V Li-ion charging path and 3.3 V system rail in space-constrained earbud cases.

IC Role / Device Role: Dual-function switch: buck regulator FET + reverse-polarity protection Schottky in single footprint.

Use Value: Eliminates need for external Schottky diode, saving 1.5 mm² board area and reducing BOM count by one component.

Equivalent & Alternatives

The following parts are listed as comparable options for similar co-packaged MOSFET/Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3 (Vishay)	R_DS(on) = 0.028 Ω @ 10 V; Schottky V_F = 0.55 V @ 3 A; Q_g = 26 nC; SO-8 footprint identical.	Higher R_DS(on) increases conduction loss by ~22% at 5 A; slightly slower t_f (30 ns) impacts 2 MHz designs.	Preferred where Vishay qualification or long-term supply continuity is mandated; suitable for <1.5 MHz operation.
DMN3026LSD-13 (Diodes Inc.)	R_DS(on) = 0.026 Ω @ 10 V; Schottky V_F = 0.58 V @ 3 A; Q_g = 24 nC; SO-8 but non-JEDEC pinout (G-S-D-D-K-K-A-A).	Non-standard pin assignment requires PCB redesign; higher V_F degrades light-load efficiency in battery apps.	Only viable with layout revision; acceptable where Diodes Inc. sourcing advantages outweigh redesign cost.

Compared with Si7850DP and DMN3026LSD, the IRF7353D2 offers the lowest combined R_DS(on)/V_F product and JEDEC-compliant pinout - making it optimal for drop-in replacement in existing SO-8 buck layouts targeting >93% efficiency at 1–2 MHz.

Availability

IRF7353D2 is available at Aetrix Electronics and suitable for USB-C PD adapters, smartphone PMICs, industrial IoT sensor nodes, and wireless earbud charging cases requiring stable component supply across multi-year production cycles.

Supply support for IRF7353D2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs, with roots in International Rectifier's power MOSFET innovation.

The FETKY™ product line was developed to address board-area constraints in portable DC-DC converters, integrating optimized MOSFETs and Schottky diodes into JEDEC-standard packages for plug-and-play synchronous rectification.

FAQ

Is IRF7353D2 suitable for synchronous buck topologies with 5 V gate drive?

Yes - its gate threshold voltage (V_GS(th)) is 1.0 V (min), and R_DS(on) remains low (0.032 Ω typ.) at V_GS = 4.5 V, enabling reliable operation with 5 V microcontroller GPIO or dedicated 5 V gate drivers. Full enhancement occurs at 10 V, but partial turn-on is functional and documented in the datasheet's transfer characteristics.

Can the Schottky diode be used independently of the MOSFET?

No - the Schottky anode is internally bonded to the MOSFET drain (Pins 5/6), and the cathode is tied to the MOSFET source (Pins 2/3). There is no isolation between the two dies; they share terminals and cannot be operated separately without violating absolute maximum ratings.

What is the maximum recommended PCB copper area for thermal relief?

For 2.0 W dissipation at T_A = 25 °C, a minimum 250 mm² (15 × 17 mm) 2-oz copper pour connected to Pins 2/3/4/5/6 via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) is required to maintain T_J ≤ 125 °C. This matches the test condition specified in the datasheet's R_θJA measurement.

Does IRF7353D2 support avalanche energy rating?

No - the datasheet does not specify rated avalanche energy (E_AS) or repetitive avalanche capability. It is intended for clamped inductive switching only (e.g., buck converters with controlled V_DS clamp), and operation beyond V_DSS = 30 V is not guaranteed or characterized.

IRF7353D2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 25 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7353D2 FAQ

1.How can I place an order for IRF7353D2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7353D2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7353D2 reliable?

The price and inventory of IRF7353D2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7353D2 is usually 5 days.

3.What payment methods are accepted for IRF7353D2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7353D2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7353D2?

IRF7353D2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7353D2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7353D2?

For technical support, including IRF7353D2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7353D2 requirements.

6.How does Aetrix verify that IRF7353D2 is sourced from the original manufacturer or authorized distributors?

All IRF7353D2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7353D2 meets industry standards.

7.What is the process for return or replacement of IRF7353D2?

All IRF7353D2 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7353D2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7353D2 part is unused and in its original packaging.

Return procedure for IRF7353D2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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