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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7353D2PBF

Name: IRF7353D2PBF
Brand: Infineon Technologies
SKU: IRF7353D2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7353D2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7353D2PBF.pdf

Description:: MOSFET N-CH 30V 6.5A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7353D2PBF from Vishay Siliconix (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 30 V V_DS, 49 A continuous drain current at T_C = 25°C, and 4.5 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or low-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF7353D2PBF datasheet, IRF7353D2PBF pinout, IRF7353D2PBF application, or IRF7353D2PBF equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, fast switching speed (t_rise = 18 ns, t_fall = 12 ns), thermal resistance (R_θJC = 1.2°C/W), and suitability for high-frequency PWM control in 12 V automotive and industrial power supplies.

Technical Context

This MOSFET employs planar stripe cell technology with optimized gate oxide thickness and source/drain doping profiles to achieve low conduction loss while maintaining rugged avalanche capability (E_AS = 110 mJ at T_J = 25°C). Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, enabling compatibility with standard 3.3 V and 5 V logic-level drivers.

The device features a fully characterized body diode with reverse recovery time (t_rr) of 35 ns and Q_rr of 22 nC at I_F = 24.5 A, supporting efficient synchronous rectification without external Schottky replacement in buck converters operating up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in common-source configuration; supports 12 V nominal bus systems with 2× safety margin.
R_DS(on) @ V_GS=10 V	4.5 mΩ (typ) - Enables <1 W conduction loss at 15 A DC, critical for thermally constrained PCB layouts.
I_D (continuous)	49 A @ T_C = 25°C - Sustains high-current loads in motor gate drivers and battery protection circuits.
Q_g	27 nC (typ) - Low total gate charge reduces driver power loss and enables fast turn-on with minimal overshoot.
t_rr	35 ns - Supports high-frequency synchronous rectification without excessive diode switching loss or EMI.
R_θJC	1.2°C/W - Allows direct heatsinking to copper pour or external heatsink for >30 W power dissipation in compact designs.

Pinout & Package

D2PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-pin outline with exposed drain pad for thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires ≤±20 V rating and low-impedance drive to minimize switching losses.
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations.
3 (D)	Drain	High-current output terminal; electrically and thermally connected to exposed copper pad on bottom of package.

Key Features

Feature	Design Value
Low R_DS(on) at 10 V	4.5 mΩ typ - Reduces I²R loss by >30% vs. legacy 30 V MOSFETs in 12 V input buck stages.
Fast switching speed	t_rise/t_fall = 18/12 ns - Enables >500 kHz operation with minimal dead-time penalty in half-bridge topologies.
Rugged avalanche rating	E_AS = 110 mJ - Withstands repetitive inductive switching stress in motor gate drivers without derating.
Enhanced body diode	Q_rr = 22 nC - Minimizes reverse recovery energy loss during freewheeling in synchronous rectifiers.

Applications

Automotive DC-DC Converter

Industrial Motor Gate Driver

Use Scenario: 12 V to 5 V/3.3 V point-of-load conversion in engine control units and ADAS modules.

IC Role / Device Role: Low-side synchronous rectifier in buck converter topology.

Use Value: 4.5 mΩ R_DS(on) delivers >94% efficiency at 15 A load, reducing thermal load on multilayer PCB.

Use Scenario: Half-bridge gate drive stage for 24 V brushed DC motors in factory automation actuators.

IC Role / Device Role: Low-side switch controlling motor winding current path.

Use Value: Fast 12 ns fall time ensures precise PWM duty cycle control and minimizes shoot-through risk.

Server VRM Output Stage

Battery Protection Circuit

Use Scenario: Multiphase buck converter output stage supplying CPU core voltage (0.8–1.2 V) from 12 V rail.

IC Role / Device Role: High-current, low-R_DS(on) power switch in paralleled phase legs.

Use Value: 49 A rating and 1.2°C/W R_θJC support parallel operation with uniform current sharing and thermal stability.

Use Scenario: Overcurrent and short-circuit protection switch in 12 V Li-ion battery packs for portable tools.

IC Role / Device Role: Primary current-path MOSFET controlled by protection IC.

Use Value: 110 mJ avalanche energy rating allows safe interruption of 30 A fault currents without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL7833PbF	R_DS(on) = 3.2 mΩ @ 4.5 V (logic-level); higher gate charge (Q_g = 42 nC)	Better suited for 3.3 V microcontroller drive; less optimal for 10 V gate drivers due to excess Q_g	Select when gate drive voltage ≤4.5 V is fixed and lowest R_DS(on) at low V_GS is critical.
SiR872DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 10 V; lower Q_g (22 nC); same D2PAK package	Improved switching efficiency in high-frequency (>1 MHz) converters due to reduced gate drive loss	Prefer for high-frequency VRMs or resonant topologies where gate drive power dominates losses.

Compared with IRF7353D2PBF, IRL7833PbF offers superior low-voltage drive but sacrifices switching speed, while SiR872DP-T1-GE3 delivers marginally lower R_DS(on) and significantly lower Q_g, making it more efficient in high-frequency, gate-drive-limited applications.

Availability

IRF7353D2PBF is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor gate drivers, and server VRM output stages requiring stable component supply and long-term production continuity.

Supply support for IRF7353D2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and thermal performance.

This device belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-current, high-frequency switching in 12 V and 24 V power systems where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum junction temperature for reliable operation?

The IRF7353D2PBF has a maximum rated junction temperature of 175°C. Operation at this limit requires strict thermal design: the package's R_θJC = 1.2°C/W demands direct thermal interface to a heatsink or ≥2 oz copper plane with thermal vias. Derating is required above 125°C ambient per the Safe Operating Area (SOA) curve in the datasheet.

Can this MOSFET be used with 5 V gate drive?

Yes - the gate threshold voltage (V_GS(th)) is specified from 1.0 V to 2.5 V, and R_DS(on) is characterized down to 4.5 V. At 5 V V_GS, R_DS(on) rises to ~6.8 mΩ (max), increasing conduction loss by ~50% versus 10 V drive. For 5 V systems, verify thermal margin under full load.

Is the D2PAK drain tab electrically isolated?

No - the exposed drain pad on the underside of the D2PAK package is internally connected to the drain terminal (Pin 3). It must be mounted on a non-isolated copper area or insulated with a thermally conductive but electrically isolating pad if system grounding requires isolation.

Does this part have lead-free and RoHS-compliant packaging?

Yes - the "PbF" suffix in IRF7353D2PBF explicitly denotes lead-free (Pb-free) and RoHS-compliant construction. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and is qualified for reflow soldering per IPC/JEDEC J-STD-020.

IRF7353D2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 25 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7353D2PBF FAQ

1.How can I place an order for IRF7353D2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7353D2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7353D2PBF reliable?

The price and inventory of IRF7353D2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7353D2PBF is usually 5 days.

3.What payment methods are accepted for IRF7353D2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7353D2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7353D2PBF?

IRF7353D2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7353D2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7353D2PBF?

For technical support, including IRF7353D2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7353D2PBF requirements.

6.How does Aetrix verify that IRF7353D2PBF is sourced from the original manufacturer or authorized distributors?

All IRF7353D2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7353D2PBF meets industry standards.

7.What is the process for return or replacement of IRF7353D2PBF?

All IRF7353D2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7353D2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7353D2PBF part is unused and in its original packaging.

Return procedure for IRF7353D2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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