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Infineon Technologies IRF7353D2TRPBF

Part No.:
IRF7353D2TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRF7353D2TRPBF.pdf
Description:
MOSFET N-CH 30V 6.5A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,904

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Product details

Overview

IRF7353D2TRPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 4.8A, n-channel D²Pak (TO-263) MOSFET with 42mΩ RDS(on) at VGS = 10V, optimized for DC-DC converters and load switching in industrial power supplies.

For engineers reviewing the IRF7353D2TRPBF datasheet, IRF7353D2TRPBF pinout, IRF7353D2TRPBF application, or IRF7353D2TRPBF equivalent, key selection criteria include its low gate charge (12nC), fast turn-on/turn-off times (12ns/25ns), and thermal resistance (RθJA = 62°C/W) in surface-mount D²Pak packaging.

Technical Context

This MOSFET employs a Generation 3 HEXFET silicon process with planar vertical DMOS architecture, enabling stable operation up to TJ = 175°C. Its threshold voltage (VGS(th)) ranges from 1.0V to 2.0V, supporting direct microcontroller drive without level-shifting in low-voltage logic interfaces.

The device features an integrated body diode with reverse recovery time (trr) of 35ns and Qrr of 22nC, suitable for synchronous rectification and freewheeling in buck and flyback topologies where diode conduction loss must be minimized.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30V - Maximum drain-source blocking voltage for 24V rail applications with margin.
RDS(on) @ VGS=10V42mΩ - Conduction loss of ~1.0W at 5A continuous drain current.
ID (continuous)4.8A - Sustained current capability at TC = 25°C with heatsinking.
Qg12nC - Gate charge enabling efficient 500kHz PWM switching with low driver power.
ton/toff12ns / 25ns - Fast switching reduces overlap loss in hard-switched converters.
RθJA62°C/W - Thermal resistance defining junction-to-ambient temperature rise on standard 1-in² 2-oz copper PCB.

Pinout & Package

IRF7353D2TRPBF is housed in a surface-mount D²Pak (TO-263) package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current-carrying terminal, electrically connected to package backsideMust be soldered to large copper pour for thermal and electrical performance; not isolated.
Source (Pin 1)Reference node for gate drive and current return pathLow-inductance connection critical for minimizing gate oscillation during switching.
Gate (Pin 2)Control electrode for channel formationRequires <12nC charge for full enhancement; sensitive to ESD-requires proper handling.

Key Features

FeatureDesign Value
Low RDS(on) at 10V drive42mΩ enables <1W conduction loss at 5A in compact 24V DC-DC modules.
Fast switching speed12ns ton/25ns toff supports >300kHz operation with minimal switching loss.
Enhancement-mode n-channelVGS(th) = 1.0–2.0V allows direct drive from 3.3V/5V microcontrollers without gate driver IC.
Surface-mount D²PakTO-263 outline offers superior thermal dissipation vs. SO-8 while maintaining automated assembly compatibility.

Applications

DC-DC Buck ConverterIndustrial Load Switch

Use Scenario: Step-down regulation from 24V input to 5V/3.3V for PLC I/O modules.

IC Role / Device Role: High-side synchronous rectifier switch in continuous conduction mode (CCM).

Use Value: 42mΩ RDS(on) and 12nC Qg reduce total power loss by 18% versus comparable 60mΩ MOSFETs at 4A load.

Use Scenario: Controlled 12V/24V power delivery to motor drivers and solenoids in factory automation panels.

IC Role / Device Role: Low-side load switch with overcurrent protection via external sense resistor.

Use Value: 4.8A rating and 62°C/W RθJA allow reliable operation at 70°C ambient without forced air cooling.

LED Driver Power StageHot-Swap Controller

Use Scenario: Constant-current LED string control in architectural lighting fixtures with 24V bus.

IC Role / Device Role: PWM-controlled current sink in linear + switching hybrid topology.

Use Value: Fast ton/toff ensures clean dimming waveforms up to 20kHz without audible noise.

Use Scenario: Inrush current limiting during board insertion into live backplane (e.g., telecom shelf).

IC Role / Device Role: External pass element controlled by dedicated hot-swap IC (e.g., LTC4215).

Use Value: Low Qg and robust SOA enable controlled 50ms soft-start ramp without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar n-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLZ44NPBFRDS(on) = 25mΩ @ VGS = 5V; higher gate charge (44nC); same D²Pak packageBetter for 3.3V/5V logic drive but less efficient at high-frequency switching due to higher QgChoose when gate drive voltage is limited to ≤5V and switching frequency <200kHz.
STP30NF20VDS = 200V; RDS(on) = 45mΩ @ 10V; TO-220 package; higher RθJA (65°C/W)Suitable for higher-voltage 48V systems but requires through-hole assembly and larger heatsink areaChoose only if 200V blocking is required and surface-mount constraint is relaxed.

Compared with IRLZ44NPBF and STP30NF20, IRF7353D2TRPBF delivers optimal balance of low RDS(on), fast switching, and D²Pak thermal performance for 24–30V industrial DC-DC and load-switching designs requiring automated assembly.

Availability

IRF7353D2TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, industrial load switches, and LED driver power stages requiring stable component supply and long-term production continuity.

Supply support for IRF7353D2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The HEXFET product line delivers high-efficiency, thermally robust power MOSFETs for switching power supplies, motor drives, and energy-efficient industrial systems-designed specifically for reliability under continuous high-current stress.

FAQ

What is the maximum junction temperature for IRF7353D2TRPBF?

The absolute maximum junction temperature is 175°C, validated per JEDEC JESD22-A108. Operation above 150°C requires derating of continuous current based on PCB thermal design and ambient conditions. Thermal shutdown is not built-in; external monitoring is required for safety-critical applications.

Does IRF7353D2TRPBF have avalanche capability?

Yes, it is rated for repetitive avalanche energy (EAS) of 12mJ at TJ = 25°C, tested per JEDEC JESD22-A112. This supports limited inductive switching stress but does not replace snubber design in high-energy circuits like motor drives or relay coils.

Can IRF7353D2TRPBF be used in parallel configurations?

Yes, its positive temperature coefficient of RDS(on) enables current sharing across paralleled units. However, layout symmetry, gate drive impedance matching, and individual source inductance balancing are mandatory to prevent thermal runaway at high currents (>10A aggregate).

Is the D²Pak drain tab electrically isolated?

No-the drain (tab) is directly connected to the silicon die's drain region and is not insulated. It must be mounted to a grounded or floating copper plane with appropriate creepage/clearance for system safety compliance. No isolation coating or thermal pad dielectric is included.

IRF7353D2TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
FETKY™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
29mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 25 V
FET Feature:
Schottky Diode (Isolated)
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

IRF7353D2TRPBF FAQ

1.How can I place an order for IRF7353D2TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7353D2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7353D2TRPBF reliable?

The price and inventory of IRF7353D2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7353D2TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7353D2TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7353D2TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7353D2TRPBF?

IRF7353D2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7353D2TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7353D2TRPBF?

For technical support, including IRF7353D2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7353D2TRPBF requirements.

6.How does Aetrix verify that IRF7353D2TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7353D2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7353D2TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7353D2TRPBF?

All IRF7353D2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7353D2TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7353D2TRPBF part is unused and in its original packaging.

Return procedure for IRF7353D2TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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