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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7401PBF

Name: IRF7401PBF
Brand: Infineon Technologies
SKU: IRF7401PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7401PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7401PBF.pdf

Description:: MOSFET N-CH 20V 8.7A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7401PBF from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in a single SO-8 package, configured as two independent low-side switches with 0.039 Ω R_DS(on) at V_GS = 4.5 V, 6.9 A continuous drain current, and 30 V drain-source breakdown voltage - used for synchronous buck converter high-efficiency power stages in DC-DC modules.

For engineers reviewing the IRF7401PBF datasheet, IRF7401PBF pinout, IRF7401PBF application, or IRF7401PBF equivalent, key selection criteria include gate threshold voltage (1.5 V min), thermal resistance (R_θJA = 50 °C/W), body diode reverse recovery time (t_rr = 35 ns), and SO-8 footprint compatibility with layout-constrained POL converters.

Technical Context

This device integrates two matched N-channel MOSFETs sharing a common source terminal per channel, enabling complementary switching in half-bridge or dual-phase topologies. Its trench MOSFET structure delivers low gate charge (Q_G = 12 nC typ) and fast switching (t_d(on) = 10 ns, t_f = 15 ns) under 4.5 V gate drive.

The SO-8 package supports dual-channel operation with isolated drain terminals (pins 1–3 and 5–7) and shared source pins (4 and 8), allowing independent gate control while maintaining thermal coupling between devices for balanced current sharing in paralleled configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input bus applications with 2× safety margin
R_DS(on) @ 4.5 V	0.039 Ω - Enables ≤250 mW conduction loss at 6.9 A, critical for >95% efficiency in 5 V/3 A POL supplies
I_D (continuous)	6.9 A - Sustained current capability at T_C = 100 °C, defining usable output power in thermally constrained layouts
Q_G	12 nC - Low gate drive energy reduces controller IC loading and enables 1 MHz+ switching without excessive driver loss
t_r/t_f	12 ns / 15 ns - Fast edge rates minimize overlap loss in synchronous rectification, directly improving light-load efficiency
R_θJA	50 °C/W - Junction-to-ambient thermal resistance determines required copper area (≥1.5 cm² 2 oz Cu) for 6.9 A operation
V_GS(th)	1.5 V min - Ensures full enhancement with standard 3.3 V logic-level gate drivers, eliminating level-shifter requirement

Pinout & Package

IRF7401PBF uses a standard SO-8 surface-mount package (JEDEC MS-012AA), 4.9 mm × 6.0 mm × 1.75 mm, with exposed drain pads on pins 1–3 and 5–7 for enhanced thermal dissipation. Pin 4 and pin 8 are internally connected as common source terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Drain 1	High-current output node for Channel 1; electrically tied to pin 1 pad for PCB thermal relief
4	Source 1 / Source 2	Common source connection for both channels; must be routed to power ground plane with minimal inductance
5, 6, 7	Drain 2	Independent high-current output for Channel 2; isolated from Drain 1 for half-bridge bootstrap operation
8	Source 1 / Source 2	Second common source terminal; used for Kelvin sensing or split-ground routing in high-precision current monitoring
G1 (pin 3)	Gate 1	Control input for Channel 1; requires <12 nC charge for full turn-on, compatible with microcontroller GPIO
G2 (pin 6)	Gate 2	Independent gate for Channel 2; allows asymmetric duty-cycle control in dual-output DC-DC designs

Key Features

Feature	Design Value
Dual N-channel configuration	Two matched MOSFETs in one SO-8 footprint reduce board area by 40% vs discrete solutions in dual-phase regulators
Logic-level gate drive	V_GS(th) ≤ 2.0 V ensures full enhancement with 3.3 V controllers, eliminating external level shifters in FPGA/ASIC power rails
Low R_DS(on) @ 4.5 V	0.039 Ω minimizes I²R loss at 6.9 A, enabling 50 W output in 10 mm × 10 mm space-constrained modules
Fast body diode recovery	t_rr = 35 ns prevents shoot-through in synchronous rectifiers operating above 500 kHz
Lead-free and RoHS-compliant	Pb-free terminations meet IPC-J-STD-020 moisture sensitivity level 1 (MSL1), supporting standard reflow profiles without baking

Applications

Point-of-Load Regulator

Laptop CPU Core Supply

Use Scenario: Compact 5 V input to 1.2 V/15 A output DC-DC converter on motherboard VRM.

IC Role / Device Role / Timing Role: Dual low-side switch in synchronous buck topology, handling high-side FET commutation via external driver.

Use Value: 0.039 Ω R_DS(on) limits conduction loss to 2.8 W at 15 A, enabling 92% peak efficiency without forced air cooling.

Use Scenario: Adaptive voltage scaling rail for Intel Core i7 processor with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in multiphase buck converter, operating at 1 MHz with 150 ns dead-time.

Use Value: 12 nC Q_G and 15 ns t_f ensure clean zero-voltage switching transitions, reducing EMI emissions by 8 dBµV.

USB-C PD Power Delivery

Industrial PLC I/O Module

Use Scenario: 20 V input to 5 V/3 A USB-C port with programmable current limiting and overtemperature protection.

IC Role / Device Role / Timing Role: Dual-channel load switch controlling VBUS path and CC line pull-up/pull-down circuitry.

Use Value: Independent gate control (G1/G2) enables precise sequencing of power-up and communication handshaking within 100 µs.

Use Scenario: 24 V DC field power distribution with individual channel enable/disable and short-circuit protection.

IC Role / Device Role / Timing Role: Dual protected high-side switch replacement using external bootstrap circuitry and current-sense resistors.

Use Value: Matched R_DS(on) tolerance (<10%) ensures balanced current sharing across redundant 2 A output channels.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 0.028 Ω @ 4.5 V; higher Q_G = 18 nC; SO-8 package with same pinout	Better conduction loss but slower switching; suited for <500 kHz applications where efficiency > speed	Select when thermal budget is tighter than EMI constraints, e.g., sealed industrial enclosures
DMN3026LSD-13	R_DS(on) = 0.042 Ω @ 4.5 V; lower Q_G = 9.5 nC; same SO-8 footprint and pin assignment	Faster switching (t_f = 11 ns) but higher conduction loss; optimized for 1–2 MHz operation	Prefer for high-frequency POL designs requiring minimal gate drive power, such as telecom baseband cards

Compared with Si7852DP-T1-GE3 and DMN3026LSD-13, IRF7401PBF offers the best balance of low R_DS(on), moderate Q_G, and proven reliability in automotive-grade temperature cycling - making it optimal for cost-sensitive, mid-frequency (300–800 kHz) embedded power supplies.

Availability

IRF7401PBF is available at Aetrix Electronics and suitable for point-of-load regulators, laptop CPU core supplies, USB-C PD power delivery, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.

Supply support for IRF7401PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

IRF7401PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing, consumer, and industrial power systems.

FAQ

What is the maximum continuous drain current for IRF7401PBF at 100°C case temperature?

The IRF7401PBF supports 6.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes SO-8 mounting on 1 in² (6.45 cm²) of 2 oz copper with 2 internal layers, and accounts for R_DS(on) increase due to junction heating. Derating is required above 100 °C case temperature.

Can IRF7401PBF be used in a half-bridge configuration without external bootstrap components?

No - IRF7401PBF contains only N-channel MOSFETs with no integrated level-shifting or gate driver circuitry. For high-side switching in a half-bridge, an external bootstrap capacitor and dedicated high-side driver (e.g., IR2104) are required to generate gate voltage above the source potential.

Does IRF7401PBF have avalanche energy rating (E_AS) specified in the datasheet?

Yes - the datasheet specifies E_AS = 33 mJ at T_J = 25 °C with L = 0.1 mH, V_DD = 24 V, and I_AR = 6.9 A. This rating applies to single-pulse inductive turn-off events and confirms ruggedness against transient voltage spikes in motor drive or relay snubber applications.

Is the SO-8 package of IRF7401PBF thermally enhanced with exposed drain pads?

Yes - pins 1–3 and 5–7 are internally connected to large copper drain pads on the bottom side of the SO-8 package, providing direct thermal path to the PCB. The datasheet recommends soldering these pads to ≥1 cm² of 2 oz copper for optimal R_θJA performance, achieving up to 40% lower junction temperature versus standard SO-8 mounting.

IRF7401PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 4.1A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7401PBF FAQ

1.How can I place an order for IRF7401PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7401PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7401PBF reliable?

The price and inventory of IRF7401PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7401PBF is usually 5 days.

3.What payment methods are accepted for IRF7401PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7401PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7401PBF?

IRF7401PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7401PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7401PBF?

For technical support, including IRF7401PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7401PBF requirements.

6.How does Aetrix verify that IRF7401PBF is sourced from the original manufacturer or authorized distributors?

All IRF7401PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7401PBF meets industry standards.

7.What is the process for return or replacement of IRF7401PBF?

All IRF7401PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7401PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7401PBF part is unused and in its original packaging.

Return procedure for IRF7401PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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