Infineon Technologies IRF7402PBF
- Part No.:
- IRF7402PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7402PBF.pdf
- Description:
- MOSFET N-CH 20V 6.8A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:8,120
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Product details
Overview
IRF7402PBF from Infineon Technologies (formerly International Rectifier) is a 20V N-channel enhancement-mode power MOSFET in SO-8 package, featuring RDS(on) = 0.035Ω @ VGS = 4.5V, 6.8A continuous drain current at 25°C, and ultra-low profile (<1.1mm). It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and battery-powered systems.
For engineers reviewing the IRF7402PBF datasheet, IRF7402PBF pinout, IRF7402PBF application, or IRF7402PBF equivalent, key selection criteria include its low RDS(on) at logic-level gate drive, fast switching (tr = 47ns, tf = 32ns), SO-8 thermal performance (RθJA = 50°C/W), and body diode recovery characteristics (trr = 51–77ns).
Technical Context
This fifth-generation HEXFET® device uses advanced silicon processing to minimize conduction loss per unit area while maintaining rugged avalanche capability. Its gate charge profile (Qg = 14–22nC, Qgd = 6.3–9.5nC) supports efficient PWM operation in high-frequency synchronous buck stages.
The SO-8 package employs a customized leadframe for enhanced thermal dissipation and multi-die compatibility. Board-level power dissipation exceeds 0.8W under standard PCB mounting, enabled by low-profile construction and optimized copper land patterns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20V - Maximum blocking voltage for 3.3V/5V-input DC-DC stages and USB power switches |
| RDS(on) | 0.035Ω @ VGS = 4.5V - Enables <150mW conduction loss at 6A, critical for thermally constrained portable designs |
| ID (continuous) | 6.8A @ TA = 25°C - Supports high-current load switching without external heatsinking on 1-in² copper |
| Qg | 14–22nC - Low gate drive energy reduces controller IC loading and enables >1MHz switching with minimal driver loss |
| tr/tf | 47ns/32ns - Fast edge rates minimize overlap loss in synchronous rectification and reduce EMI filter size |
| trr | 51–77ns - Body diode recovery time compatible with 500kHz–1MHz synchronous buck topologies |
| RθJA | 50°C/W - Thermal resistance measured on 1-in² copper board; defines safe operating area for unforced-air applications |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012AA compliant), low-profile (max height 1.1mm), lead-free, optimized for vapor-phase, infrared, and wave soldering. Dimensions: 4.9 × 6.0 × 1.1 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Drain (D) | Internally paralleled drain terminals - provide low-inductance, high-current path to PCB power plane |
| 6 | Gate (G) | Control input requiring ≤12V gate drive; Miller charge (Qgd) impacts turn-off timing in hard-switched circuits |
| 7, 8 | Source (S) | Common source node for internal MOSFETs and body diode cathode; connects directly to ground/power return plane |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.035Ω @ 4.5V gate drive enables efficient 3.3V/5V logic-level control without level-shifting circuitry |
| Fast switching speed | 47ns rise / 32ns fall time minimizes transition losses in high-frequency DC-DC converters (>500kHz) |
| Enhanced SO-8 thermal design | Custom leadframe increases thermal conductivity and supports >0.8W dissipation on standard FR4 PCB |
| Low-profile package | 1.1mm max height allows use in space-constrained applications including ultra-thin consumer electronics |
| Lead-free and RoHS-compliant | Pb-free plating and halogen-free molding compound meet global environmental compliance requirements |
Applications
| USB Power Delivery Switch | Portable Device Load Switch |
|---|---|
Use Scenario: Bidirectional 5V/3A power path control in USB-C PD sink applications with overcurrent protection. IC Role / Device Role: Low-side load switch managing VBUS connection between connector and system PMIC. Use Value: 0.035Ω RDS(on) limits voltage drop to <105mV at 3A, preserving bus regulation margin and reducing thermal stress on PCB traces. | Use Scenario: Controlled power-up sequencing of display backlight and camera modules in smartphones. IC Role / Device Role: High-side or low-side discrete power switch enabling firmware-controlled rail enable/disable. Use Value: Logic-level gate threshold (0.7–1.0V) ensures reliable turn-on from 1.8V/3.3V GPIOs; fast switching prevents inrush-induced brownouts. |
| Synchronous Buck Converter Bottom FET | Hot-Swap Controller External FET |
Use Scenario: Bottom-side switch in 12V-to-3.3V/5V point-of-load converter for FPGA or SoC core supplies. IC Role / Device Role: Synchronous rectifier replacing Schottky diode to improve efficiency above 2A load. Use Value: Body diode reverse recovery time (51–77ns) and low Qrr (69–100nC) prevent shoot-through and reduce switching loss during dead-time transitions. | Use Scenario: External pass element in hot-swap controller IC (e.g., LTC4215) for 5V/12V backplane applications. IC Role / Device Role: Current-limiting series FET protecting downstream circuitry during live insertion. Use Value: 6.8A continuous rating and 54A pulsed capability support Class 2 hot-swap profiles; SO-8 footprint simplifies layout near controller IC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2302DS-T1-E3 | RDS(on) = 0.055Ω @ 4.5V; lower ID (3.3A); SOT-23 package | Lower current handling and higher on-resistance limit use to sub-2A loads and tighter space constraints | Select when board area is prioritized over conduction loss and thermal margin is sufficient |
| DMN2004LK-7 | RDS(on) = 0.032Ω @ 4.5V; same SO-8 package; higher Qg (28nC) | Higher gate charge increases driver loss and slows switching vs. IRF7402PBF in high-frequency designs | Select when lowest possible RDS(on) is critical and gate drive strength permits higher Qg |
Compared with Si2302DS-T1-E3 and DMN2004LK-7, the IRF7402PBF offers optimal balance of low RDS(on), moderate Qg, and proven SO-8 thermal reliability-making it preferred for 3–6A DC-DC bottom-FET and load-switch roles where efficiency and board-level thermal management are co-constrained.
Availability
IRF7402PBF is available at Aetrix Electronics and suitable for USB power delivery switches, portable device load switches, synchronous buck converter bottom FETs, and hot-swap controller external FETs requiring stable component supply and long-term industrial availability.
Supply support for IRF7402PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.
The HEXFET® power MOSFET product line was developed to deliver ultra-low on-resistance and fast switching in compact packages for high-efficiency power conversion in consumer, computing, and communications equipment.
FAQ
What is the maximum junction temperature for IRF7402PBF?
The absolute maximum junction and storage temperature range is –55°C to +150°C. Continuous operation above 125°C requires derating power dissipation per the linear derating factor of 0.02 W/°C, and thermal design must ensure peak transient junction temperature remains within this limit under worst-case load and ambient conditions.
Can IRF7402PBF be used in avalanche mode?
Yes-the device is rated for repetitive avalanche energy (EAS) per the manufacturer's SOA curves (Fig. 8). However, no specific EAS value is published in the datasheet; design margins must be verified using the maximum safe operating area plot and actual circuit conditions including inductive load energy and clamping voltage.
Is IRF7402PBF suitable for 3.3V gate drive?
Yes-its gate threshold voltage (VGS(th)) ranges from 0.70V to 1.0V, and RDS(on) is specified down to VGS = 2.7V (0.050Ω). At 3.3V gate drive, it delivers robust conduction performance with typical RDS(on) ≈ 0.042Ω, making it well-suited for direct microcontroller GPIO control.
Does IRF7402PBF have integrated ESD protection?
No-this discrete MOSFET does not include on-chip ESD protection diodes. External TVS or RC filtering is recommended on gate and drain lines in systems exposed to human contact or cable discharge events, especially in USB or hot-swap applications where gate oxide integrity is critical.
IRF7402PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7402PBF FAQ
1.How can I place an order for IRF7402PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7402PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7402PBF reliable?
The price and inventory of IRF7402PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7402PBF is usually 5 days.
3.What payment methods are accepted for IRF7402PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7402PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7402PBF?
IRF7402PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7402PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7402PBF?
For technical support, including IRF7402PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7402PBF requirements.
6.How does Aetrix verify that IRF7402PBF is sourced from the original manufacturer or authorized distributors?
All IRF7402PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7402PBF meets industry standards.
7.What is the process for return or replacement of IRF7402PBF?
All IRF7402PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7402PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7402PBF part is unused and in its original packaging.
Return procedure for IRF7402PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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