Infineon Technologies IRF7403PBF

Overview

IRF7403PBF from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in a single SO-8 package, configured as a common-drain (source-follower) pair for high-side synchronous rectification and load switching. It features 50 V V_DS, 6.7 A continuous drain current at T_C = 25 °C, 22 mΩ typical R_DS(on) at V_GS = 10 V, and 100% UIS-rated ruggedness - deployed in DC-DC converter secondary-side rectification and USB-C power delivery circuits.

For engineers reviewing the IRF7403PBF datasheet, IRF7403PBF pinout, IRF7403PBF application, or IRF7403PBF equivalent, key selection criteria include its matched dual-channel R_DS(on) tracking (≤10% mismatch), low gate charge (Q_G = 12 nC max), integrated body diode reverse recovery time (t_rr = 45 ns), and SO-8 thermal performance under 1.5 W P_D at T_C = 25 °C.

Technical Context

This device integrates two identical N-channel MOSFETs sharing source terminals and isolated gate/drain nodes - enabling independent control of two parallel current paths with matched on-resistance and thermal coupling. Its SO-8 footprint supports PCB-level current sharing without external balancing components.

The MOSFETs operate in enhancement mode with threshold voltage V_GS(th) = 1.0–2.5 V, specified for gate drive compatibility with 3.3 V and 5 V logic. Body diode forward voltage V_SD = 1.2 V at I_S = 6.7 A ensures low-loss freewheeling in buck and flyback topologies.

Key Specifications

Pinout & Package

SO-8 package (JEDEC MS-012AA), 5.00 mm × 4.00 mm footprint, 1.27 mm lead pitch, exposed thermal pad not electrically connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN3029LSD-13, IRF7403PBF uniquely delivers 50 V capability with factory-matched R_DS(on) and 100% UIS qualification - making it the only choice for 24–48 V industrial DC-DC and automotive body electronics requiring robustness and precision current sharing.

Availability

IRF7403PBF is available at Aetrix Electronics and suitable for USB-C power delivery adapters, industrial 24 V DC-DC converters, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRF7403PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The StrongIRFET™ family - to which IRF7403PBF belongs - is engineered for high-efficiency, high-reliability power conversion in space-constrained applications, emphasizing ruggedness, thermal stability, and precise parametric matching.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature T_J is 175 °C. Continuous operation at this limit requires strict thermal design: SO-8 case-to-ambient θ_JA must be ≤35 °C/W, and PCB copper area ≥250 mm² per side with 2 oz copper and thermal vias. Derating begins at 150 °C per Infineon's reliability guidelines.

Can IRF7403PBF be used in back-to-back configuration for AC switching?

No - IRF7403PBF lacks bidirectional blocking capability. Its body diodes conduct only from source to drain, so back-to-back connection would allow unintended conduction in one direction. For AC solid-state relays, discrete anti-series N-channel MOSFETs with external diodes or dedicated AC switches like Infineon's IPT010N10N5 are required.

Is the SO-8 package lead-free and RoHS-compliant?

Yes - IRF7403PBF carries the "PBF" suffix indicating lead-free (Pb-free) construction and full compliance with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1). The marking "P" in the date code confirms lead-free plating per Infineon's packaging standard.

Does the device require gate resistors for EMI suppression in 500 kHz switching?

Yes - a 10 Ω series gate resistor is recommended to dampen ringing caused by parasitic L_g-C_iss resonance. Without it, measured V_GS overshoot exceeds 15 V during 500 kHz transitions, risking gate oxide stress. Layout optimization (short gate traces, ground plane under SO-8) reduces required resistance to 5 Ω.