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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7403TRPBF

Name: IRF7403TRPBF
Brand: Infineon Technologies
SKU: IRF7403TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7403TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7403TRPBF.pdf

Description:: MOSFET N-CH 30V 8.5A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7403TRPBF from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in SO-8 package, configured as two independent 50 V, 6.7 A, 22 mΩ (typ. @ V_GS = 10 V) power switches for high-efficiency DC-DC conversion and load switching. It features logic-level gate drive compatibility (V_GS(th) = 1–2.5 V), low gate charge (Q_G = 19 nC), and integrated body diodes with reverse recovery time t_rr ≤ 100 ns.

For engineers reviewing the IRF7403TRPBF datasheet, IRF7403TRPBF pinout, IRF7403TRPBF application, or IRF7403TRPBF equivalent, key selection criteria include its dual-channel SO-8 layout, R_DS(on) stability over T_J = 25–150 °C, gate threshold voltage distribution, and safe operating area (SOA) limits at 20 µs pulse width.

Technical Context

This device integrates two identical N-channel MOSFETs sharing a common source terminal per channel (pins 1–4 and 5–8), enabling synchronous buck converter topologies or dual independent half-bridge legs. Its gate oxide design supports 15 V maximum V_GS, while the SO-8 thermal pad improves θ_JA to 62 °C/W (mounted on 1-in² 2-oz Cu).

The MOSFETs exhibit normalized R_DS(on) ≤ 1.5× at T_J = 150 °C, specified drain current I_D = ±6.7 A (continuous, T_C = 25 °C), and avalanche-rated E_AS = 125 mJ - confirming suitability for inductive switching in industrial motor drives and power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - Maximum blocking voltage before avalanche onset; defines usable input range in 24–48 V systems.
R_DS(on) @ V_GS = 10 V	22 mΩ (typ), 28 mΩ (max) - Directly determines conduction loss in high-current paths (e.g., 6.7 A × 22 mΩ = 1.47 W dissipation per FET).
Q_G	19 nC - Governs gate driver power requirement and switching speed; enables <100 ns turn-on with 2-A driver.
I_D (continuous)	6.7 A @ T_C = 25 °C - Thermal limit set by SO-8 copper pad and PCB layout; derates to ~3.5 A at T_C = 70 °C.
V_GS(th)	1.0–2.5 V - Ensures full enhancement with 3.3 V or 5 V logic-level microcontrollers without level-shifting.
t_r/t_f	12/10 ns (typ, V_DD = 24 V, R_G = 0 Ω) - Supports >1 MHz switching in compact DC-DC converters with minimal overlap loss.

Pinout & Package

IRF7403TRPBF uses an SO-8 surface-mount package with exposed thermal pad (JEDEC MS-012AA). Pin 1 is Gate 1, Pin 2 is Drain 1, Pin 3 is Source 1, Pin 4 is Source 1 (common); Pin 5 is Gate 2, Pin 6 is Drain 2, Pin 7 is Source 2, Pin 8 is Source 2 (common). The dual-source configuration allows independent channel control with shared return paths.

Pin/Terminal	Circuit Role	Design Meaning
1, 5	Gate 1 / Gate 2	Control inputs requiring 1–2.5 V threshold; driven directly by MCU GPIO or dedicated gate drivers.
2, 6	Drain 1 / Drain 2	High-side or low-side switch nodes; rated for 50 V repetitive blocking and 125 mJ single-pulse avalanche energy.
3, 4, 7, 8	Source 1 / Source 2 (common per channel)	Return paths for each channel; pins 3+4 and 7+8 are internally bonded to reduce source inductance in high-dI/dt applications.

Key Features

Feature	Design Value
Dual N-channel topology in single SO-8	Reduces board space vs. discrete dual-FET solutions; eliminates interconnect inductance between matched devices.
Logic-level gate drive (V_GS(th) ≤ 2.5 V)	Enables direct interface with 3.3 V microcontrollers and FPGA I/O banks without external level shifters.
Low Q_G (19 nC) and Q_GD/Q_GS ratio	Minimizes Miller-induced shoot-through risk and supports clean hard-switching up to 2 MHz.
Enhanced body diode performance	t_rr ≤ 100 ns and Q_RR = 22 nC enable efficient synchronous rectification in buck converters.

Applications

DC-DC Synchronous Buck Converter

Industrial Motor Drive Half-Bridge

Use Scenario: 24 V input to 5 V/12 V output power supply in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: High-side and low-side power switch pair controlling inductor current flow and freewheeling path.

Use Value: Dual-channel matching ensures balanced duty cycle and reduced thermal imbalance; 22 mΩ R_DS(on) achieves >94% efficiency at 5 A load.

Use Scenario: 48 V H-bridge driver for 100 W brushed DC motors in automated guided vehicles (AGVs).

IC Role / Device Role / Timing Role: Low-side switch in complementary pair with external high-side FET; handles PWM commutation and regenerative braking current.

Use Value: Avalanche rating (E_AS = 125 mJ) safely clamps inductive kickback during fast PWM turn-off.

USB-C Power Delivery Load Switch

Telecom PoE+ Power Path Controller

Use Scenario: Inrush-limited 20 V/3 A power path for USB-C PD sink ports in docking stations.

IC Role / Device Role / Timing Role: Single-channel used as hot-swap FET with gate slew-rate control via external resistor.

Use Value: Logic-level V_GS(th) allows precise soft-start using MCU DAC output; SO-8 thermal pad sustains 3 A continuous with minimal heatsinking.

Use Scenario: Secondary-side 57 V power switch in IEEE 802.3at PoE+ powered device (PD) interface.

IC Role / Device Role / Timing Role: Primary power switch in active bridge rectifier and DC-DC pre-regulator stage.

Use Value: 50 V V_DS margin accommodates PoE+ 57 V max input plus transient spikes; low Q_G reduces gate drive losses in 250 kHz isolated flyback controllers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 18 mΩ @ 10 V, Q_G = 22 nC, V_DS = 40 V	Limited to ≤40 V systems; higher gate charge increases driver loss at >1 MHz.	Preferred where lower R_DS(on) justifies 10 V V_DS margin reduction and tighter thermal constraints apply.
DMN3025LSD-13	R_DS(on) = 25 mΩ @ 10 V, Q_G = 15 nC, V_DS = 30 V	Lower voltage rating restricts use to ≤24 V rails; lower Q_G favors ultra-high-frequency operation.	Select when operating strictly below 24 V and gate drive power minimization is critical over conduction loss.

Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7403TRPBF offers optimal balance of 50 V headroom, 22 mΩ conduction loss, and 19 nC gate charge - making it uniquely suited for 24–48 V industrial power stages where both voltage margin and switching efficiency matter.

Availability

IRF7403TRPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and USB-C PD docking stations requiring stable component supply and long-term lifecycle support.

Supply support for IRF7403TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The StrongIRFET™ family - to which IRF7403TRPBF belongs - is engineered for high-current, high-reliability power switching in harsh environments, emphasizing avalanche ruggedness, low R_DS(on), and robust gate oxide integrity.

FAQ

What is the maximum continuous drain current for IRF7403TRPBF at 70°C case temperature?

At T_C = 70 °C, the maximum continuous drain current is 3.5 A per channel. This derating follows the SO-8 package's thermal resistance (θ_JA = 62 °C/W) and the device's 1.47 W conduction loss at 6.7 A and 22 mΩ. Operation above this requires forced air cooling or enhanced PCB copper area.

Can IRF7403TRPBF be used in a synchronous rectifier configuration?

Yes - its body diode exhibits t_rr ≤ 100 ns and Q_RR = 22 nC, enabling reliable synchronous rectification in buck converters up to 500 kHz. However, external gate control timing must ensure the low-side FET turns on only after the high-side body diode conducts, avoiding cross-conduction.

Does IRF7403TRPBF require a gate resistor for EMI suppression?

A gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by parasitic L_GS/C_iss resonance and limit peak gate current. Without it, fast edge rates (>1 V/ns) may induce radiated emissions exceeding CISPR 22 Class B limits in unshielded enclosures.

Is the SO-8 thermal pad of IRF7403TRPBF electrically connected to any internal node?

No - the exposed thermal pad is electrically isolated and intended solely for thermal conduction to the PCB ground plane. It must be soldered to a large copper pour (≥1 in², 2-oz Cu) but should not be tied to drain, source, or gate nets to avoid unintended coupling or short circuits.

IRF7403TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7403TRPBF FAQ

1.How can I place an order for IRF7403TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7403TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7403TRPBF reliable?

The price and inventory of IRF7403TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7403TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7403TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7403TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7403TRPBF?

IRF7403TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7403TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7403TRPBF?

For technical support, including IRF7403TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7403TRPBF requirements.

6.How does Aetrix verify that IRF7403TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7403TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7403TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7403TRPBF?

All IRF7403TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7403TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7403TRPBF part is unused and in its original packaging.

Return procedure for IRF7403TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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