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Infineon Technologies IRF7404PBF
- Part No.:
- IRF7404PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7404PBF.pdf
- Description:
- MOSFET P-CH 20V 6.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,547
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Product details
Overview
IRF7404PBF from Infineon Technologies is a P-channel enhancement-mode MOSFET designed for high-efficiency DC-DC conversion and load switching in portable power systems. It features RDS(on) = 0.04 Ω at VGS = –4.5 V, continuous drain current ID = –5.3 A, and operates with gate threshold voltage VGS(th) = –1.0 to –2.5 V. Used in synchronous buck converters and battery protection circuits.
For engineers reviewing the IRF7404PBF datasheet, IRF7404PBF pinout, IRF7404PBF application, or IRF7404PBF equivalent, key selection criteria include low RDS(on) at logic-level drive, SO-8 package thermal performance, body diode recovery characteristics, and safe operating area under pulsed load conditions.
Technical Context
This device implements a trench-gate, silicon-based P-channel MOSFET architecture optimized for fast switching and low conduction loss in high-side or dual-MOSFET synchronous rectifier configurations. Its gate charge QG = 19 nC (at VGS = –10 V) and QGD = 7.5 nC support efficient PWM control up to 1 MHz in compact DC-DC modules.
The integrated body diode exhibits reverse recovery time trr ≤ 42 ns and peak reverse recovery current IRRM ≤ 4.5 A, enabling reliable operation in hard-switched topologies without external snubbing. Thermal resistance RθJA = 62 °C/W (SO-8, FR-4, 1-in² copper) defines its steady-state power dissipation limit.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) | 0.04 Ω at VGS = –4.5 V - enables <100 mW conduction loss at 5 A in compact PCB layouts |
| ID (continuous) | –5.3 A at TC = 25 °C - supports sustained load switching in handheld and IoT power rails |
| VDS | –30 V - rated for 24 V system inputs with 20 % derating margin |
| VGS(th) | –1.0 to –2.5 V - ensures full enhancement with standard 3.3 V or 5 V logic-level gate drivers |
| QG | 19 nC at VGS = –10 V - determines gate driver current requirement for <100 ns turn-on in 500 kHz designs |
| tr/tf | 12/10 ns - limits EMI generation during edge transitions in noise-sensitive applications |
| RθJA | 62 °C/W - defines maximum power dissipation of 1.2 W on standard 1-in² FR-4 copper before exceeding 150 °C junction temperature |
Pinout & Package
IRF7404PBF is housed in a standard SO-8 surface-mount package per JEDEC MS-012AA, with exposed drain pads for enhanced thermal conduction. Pin 1 is Gate (G), Pins 2–4 and 6–8 are Drain (D), and Pins 5 and 7 are Source (S).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal requiring <20 nC total charge to switch 5 A load; sensitive to ESD (HBM 1.5 kV) |
| 2, 3, 4, 6, 7, 8 | Drain (D) | Main high-side power path; all connected internally to common drain metallization and thermal pad |
| 5, 7 | Source (S) | Return path for load current; tied to ground or negative rail; used as reference for gate drive |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Full enhancement at VGS = –4.5 V enables direct interface with 3.3 V microcontrollers without level-shifting |
| Low gate charge | QG = 19 nC reduces gate driver power loss and simplifies selection of low-current drivers (e.g., TC4427) |
| Fast body diode recovery | trr ≤ 42 ns minimizes shoot-through risk and voltage spikes in synchronous rectification |
| Enhanced thermal performance | SO-8 package with internal drain tie-bar lowers RθJC to 3.5 °C/W, improving power density in stacked PCBs |
Applications
| Battery Protection Circuit | Synchronous Buck Converter |
|---|---|
Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; gate driven by protection IC (e.g., S-8261). Use Value: RDS(on) = 0.04 Ω limits voltage drop to <210 mV at 5.3 A, preserving runtime and reducing thermal stress on PCB traces. | Use Scenario: Upper switch in 3.3 V output, 12 V input synchronous buck regulator for FPGA core supply. IC Role / Device Role / Timing Role: High-side power switch toggled at 500 kHz; paired with N-channel low-side MOSFET (e.g., IRF7403). Use Value: Fast tr/tf (12/10 ns) and low QGD reduce dead-time losses and improve light-load efficiency above 92 %. |
| USB Power Delivery Switch | Industrial PLC Digital Output |
Use Scenario: 5 V/20 W USB PD port power path management with hot-swap and short-circuit protection. IC Role / Device Role / Timing Role: Load switch isolating downstream devices; controlled via dedicated load switch controller (e.g., TPS22919). Use Value: VDS = –30 V rating provides 2× margin over 5 V bus transients, supporting robust fault tolerance per USB PD 3.1 spec. | Use Scenario: 24 V DC digital output module driving solenoids and indicator LEDs in factory automation. IC Role / Device Role / Timing Role: High-side driver for inductive loads; gate driven by optocoupled microcontroller output. Use Value: Body diode forward voltage VSD = –1.2 V at –5 A enables passive flyback energy clamping without external diode, saving board space and BOM cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7107DP-T1-GE3 | RDS(on) = 0.035 Ω at –4.5 V; QG = 22 nC; SO-8 package | Higher gate charge increases driver demand but offers marginally lower conduction loss | Preferred where <50 mW conduction loss is critical and gate drive capability permits higher QG |
| DMN3026LSD-13 | RDS(on) = 0.042 Ω at –4.5 V; trr = 55 ns; same SO-8 footprint | Slower body diode recovery requires tighter dead-time tuning in synchronous rectifiers | Selected when second-source qualification is required and layout allows minor timing adjustment |
Compared with IRF7404PBF, Si7107DP-T1-GE3 delivers lower RDS(on) at the cost of increased gate drive burden, while DMN3026LSD-13 trades 13 ns longer trr for broader supply-chain availability-both retain SO-8 mechanical compatibility but require validation of thermal and dynamic behavior in final layout.
Availability
IRF7404PBF is available at Aetrix Electronics and suitable for battery protection circuits, synchronous buck converters, USB power delivery switches, and industrial PLC digital outputs requiring stable component supply across production lifecycles.
Supply support for IRF7404PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The StrongIRFET™ product line, which includes IRF7404PBF, is engineered for high-reliability power switching in space-constrained, thermally demanding applications such as portable computing, telecom infrastructure, and industrial motor drives.
FAQ
What is the maximum safe operating voltage for IRF7404PBF in continuous DC applications?
The absolute maximum drain-to-source voltage (VDS) is –30 V. For reliable long-term operation, design must maintain VDS ≤ –24 V under worst-case transient conditions-including ringing and inductive kickback-to preserve 20 % safety margin per Infineon's recommended derating guidelines.
Can IRF7404PBF be used in parallel with identical units for higher current handling?
Yes, but only with matched gate resistors and symmetrical PCB layout to ensure current sharing. The device's positive RDS(on) temperature coefficient (RDS(on) increases with junction temperature) supports inherent thermal balancing, provided trace inductance and thermal coupling are balanced across paralleled units.
Does IRF7404PBF have built-in ESD protection, and what HBM rating does it support?
IRF7404PBF incorporates process-level ESD structures and is rated for Human Body Model (HBM) ±1.5 kV per JESD22-A114. No external TVS is required for handling, but gate protection diodes are still recommended in high-noise industrial environments where >2 kV transients may occur.
How does the body diode forward voltage affect performance in reverse-biased applications?
VSD = –1.2 V at –5 A defines conduction loss during freewheeling in synchronous buck topologies. This value directly impacts efficiency: at 5 A, body diode conduction dissipates 6 W if active for 10 % of cycle time-justifying use of complementary low-side FETs to minimize body diode conduction duration.
IRF7404PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7404PBF FAQ
1.How can I place an order for IRF7404PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7404PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7404PBF reliable?
The price and inventory of IRF7404PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7404PBF is usually 5 days.
3.What payment methods are accepted for IRF7404PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7404PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7404PBF?
IRF7404PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7404PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7404PBF?
For technical support, including IRF7404PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7404PBF requirements.
6.How does Aetrix verify that IRF7404PBF is sourced from the original manufacturer or authorized distributors?
All IRF7404PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7404PBF meets industry standards.
7.What is the process for return or replacement of IRF7404PBF?
All IRF7404PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7404PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7404PBF part is unused and in its original packaging.
Return procedure for IRF7404PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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