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Infineon Technologies IRF7404QTRPBF
- Part No.:
- IRF7404QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7404QTRPBF.pdf
- Description:
- MOSFET P-CH 20V 6.7A 8-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,692
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Product details
Overview
IRF7404QTRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V VDS, -5.3 A continuous drain current at TC = 100°C, and 0.042 Ω RDS(on) at VGS = −4.5 V. It serves as a low-side load switch or synchronous rectifier in DC-DC converters, battery protection circuits, and hot-swap controllers.
For engineers reviewing the IRF7404QTRPBF datasheet, IRF7404QTRPBF pinout, IRF7404QTRPBF application, or IRF7404QTRPBF equivalent, key selection criteria include its logic-level gate drive compatibility (−2.5 V threshold), 150°C maximum junction temperature, fast switching performance, and SO-8 thermal capability for high-density power management layouts.
Technical Context
This HEXFET® device uses advanced trench process technology to achieve ultra-low on-resistance per die area while maintaining robust avalanche energy rating. Its P-channel architecture enables simple high-side or low-side switching without level-shifting circuitry when driven by standard logic outputs.
The SO-8 package provides dual-source/drain terminals per channel (pins 1–3 and 5–7 are paralleled), enabling 2× internal die configuration for enhanced current handling and thermal distribution. Gate charge is optimized at QG = 12 nC (VGS = −10 V), supporting efficient PWM operation up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V - Maximum drain-to-source blocking voltage in reverse-biased condition |
| RDS(on) @ VGS = −4.5 V | 0.042 Ω - On-resistance enabling ≤230 mW conduction loss at −5.3 A |
| ID (continuous, TC = 100°C) | −5.3 A - Sustained current capability with heatsink or PCB copper pour |
| VGS(th) | −2.5 V (max) - Ensures full enhancement with 3.3 V logic-level gate drive |
| QG | 12 nC @ VGS = −10 V - Total gate charge determining driver strength requirement |
| TJ max | 150°C - Junction temperature limit supporting industrial and automotive ambient conditions |
| Package | SO-8 - Surface-mount, thermally enhanced 8-pin outline compliant with JEDEC MS-012AA |
Pinout & Package
IRF7404QTRPBF is housed in an SO-8 package with exposed drain pads (pins 1–3 and 5–7 internally connected to source/drain respectively) and dual G/S/D terminal layout optimized for low-inductance, high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Drain (D) | High-current output node; electrically tied together for parallel conduction path |
| 4 | Gate (G) | Control input; requires −2.5 V to −10 V for full turn-on |
| 5, 6, 7 | Source (S) | Return path for drain current; pins 5–7 are internally shorted to minimize source inductance |
| 8 | Drain (D) | Secondary drain connection; tied to pins 1–3 for thermal and current sharing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.042 Ω @ −4.5 V enables <250 mW I²R loss at rated current |
| Logic-level gate drive | VGS(th) ≤ −2.5 V ensures reliable turn-on from 3.3 V microcontrollers |
| Enhanced thermal SO-8 | JEDEC MS-012AA outline with internal drain/source paralleling improves θJA vs standard SO-8 |
| 150°C junction rating | Supports operation in sealed enclosures or high-ambient environments without derating |
| Repetitive avalanche rated | Rated for unclamped inductive switching events without degradation |
Applications
| Power Supply OR-ing | Battery Protection Circuit |
|---|---|
Use Scenario: Dual-input 12 V supply redundancy where only one source powers the rail at a time. IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement to eliminate forward voltage drop and heat generation. Use Value: Reduces power loss by >60% vs Schottky diode, enabling cooler, smaller designs with no thermal runaway risk. | Use Scenario: Lithium-ion pack over-discharge prevention during deep sleep mode. IC Role / Device Role / Timing Role: Low-side disconnect switch controlled by protection IC to isolate cell stack from load. Use Value: 0.042 Ω RDS(on) limits voltage drop to <220 mV at 5 A, preserving usable capacity and minimizing self-heating. |
| Hot-Swap Controller Interface | Synchronous Buck Converter High-Side Switch |
Use Scenario: Inrush current limiting during live insertion of PCIe add-in cards or server blades. IC Role / Device Role / Timing Role: Controlled turn-on switch placed between backplane and board power rail. Use Value: Gate threshold and low QG allow precise slew-rate control using simple RC networks, preventing bus disturbance. | Use Scenario: High-efficiency 5 V → 3.3 V point-of-load converter in networking equipment. IC Role / Device Role / Timing Role: High-side P-channel switch replacing N-channel + bootstrap circuit in buck topology. Use Value: Eliminates need for floating gate driver, simplifying layout and improving reliability under transient load steps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.035 Ω @ −4.5 V; slightly lower on-resistance but higher QG (15 nC) | Better conduction efficiency but demands stronger gate driver for same switching speed | Preferred when minimizing I²R loss dominates over driver complexity |
| DMG3415L-7 | VDS = −20 V; RDS(on) = 0.045 Ω @ −4.5 V; lower voltage rating and marginally higher resistance | Limited to ≤20 V systems; unsuitable for 24 V industrial rails or 30 V surge transients | Acceptable only in cost-sensitive 3.3/5 V logic-supply applications with strict BOM constraints |
Compared with Si7157DP-T1-GE3 and DMG3415L-7, IRF7404QTRPBF offers optimal balance of −30 V rating, 0.042 Ω RDS(on), and 12 nC QG, making it uniquely suited for 12–24 V industrial power switches requiring both robustness and driver simplicity.
Availability
IRF7404QTRPBF is available at Aetrix Electronics and suitable for power supply OR-ing, battery protection circuits, hot-swap interfaces, and synchronous buck converter high-side switching requiring stable component supply across industrial design cycles.
Supply support for IRF7404QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's HEXFET® MOSFET innovation.
This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power switching in industrial, computing, and telecom infrastructure applications.
FAQ
What is the maximum safe operating voltage for IRF7404QTRPBF?
The absolute maximum drain-to-source voltage is −30 V. Operation beyond this rating risks irreversible avalanche breakdown. For 24 V nominal systems, a 30 V rating provides necessary margin against load-dump transients and ringing, but sustained operation above −28 V is not recommended without additional clamping.
Can IRF7404QTRPBF be driven directly by a 3.3 V microcontroller GPIO?
Yes - its VGS(th) is specified ≤ −2.5 V, ensuring full enhancement at 3.3 V logic levels. However, RDS(on) increases to ~0.055 Ω at VGS = −3.3 V, raising conduction loss by ~30% versus −4.5 V drive; optimal efficiency requires ≥−4.5 V gate bias.
Does IRF7404QTRPBF include integrated ESD protection?
No - it lacks on-chip ESD protection diodes. External gate protection (e.g., 10 kΩ series resistor + 12 V Zener to source) is required in handling and PCB layout to prevent gate oxide damage from static discharge or noise coupling.
How does the SO-8 package of IRF7404QTRPBF improve thermal performance over standard SO-8?
Its SO-8 variant features internal paralleling of drain (pins 1–3, 8) and source (pins 5–7) terminals, reducing package inductance and spreading heat across multiple leads. This yields lower effective θJA (≈62°C/W on 1-in² 2-oz Cu) compared to generic SO-8 MOSFETs with single-terminal assignments.
IRF7404QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7404QTRPBF FAQ
1.How can I place an order for IRF7404QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7404QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7404QTRPBF reliable?
The price and inventory of IRF7404QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7404QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7404QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7404QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7404QTRPBF?
IRF7404QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7404QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7404QTRPBF?
For technical support, including IRF7404QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7404QTRPBF requirements.
6.How does Aetrix verify that IRF7404QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7404QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7404QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7404QTRPBF?
All IRF7404QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7404QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7404QTRPBF part is unused and in its original packaging.
Return procedure for IRF7404QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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