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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7404TRPBF

Name: IRF7404TRPBF
Brand: Infineon Technologies
SKU: IRF7404TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7404TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7404TRPBF.pdf

Description:: MOSFET P-CH 20V 6.7A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7404TRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET designed for high-efficiency DC-DC conversion and load switching in portable power systems. It features −20 V V_DS, −5.3 A continuous drain current (I_D), 0.05 Ω R_DS(on) at V_GS = −4.5 V, and SO-8 package with integrated body diode - used in synchronous buck converters and battery protection circuits.

For engineers reviewing the IRF7404TRPBF datasheet, IRF7404TRPBF pinout, IRF7404TRPBF application, or IRF7404TRPBF equivalent, key selection criteria include gate threshold voltage (V_GS(th) = −1.0 to −2.5 V), low R_DS(on) at logic-level drive, SO-8 thermal performance, and body diode reverse recovery characteristics in high-frequency switching.

Technical Context

This MOSFET operates as a low-side switch in synchronous rectification topologies, where its fast turn-on (t_d(on) = 10 ns) and turn-off (t_d(off) = 25 ns) enable efficient operation up to 1 MHz. Its −4.5 V gate drive compatibility eliminates need for level-shifting circuitry in 3.3 V/5 V control domains.

The device integrates a robust body diode with reverse recovery time t_rr ≤ 40 ns and Q_rr = 12 nC at I_F = −5.3 A, supporting continuous conduction mode (CCM) in buck regulators without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - maximum blocking voltage for 3.3 V–5 V input rails in portable DC-DC stages
I_D (continuous)	−5.3 A @ T_C = 25 °C - supports ≥3 W load switching at ambient temperature
R_DS(on)	0.05 Ω @ V_GS = −4.5 V - enables <150 mW conduction loss at 5 A load
V_GS(th)	−1.0 to −2.5 V - ensures full enhancement with standard logic-level gate drivers
Q_G	12 nC @ V_GS = −10 V - determines gate drive power requirement for 1 MHz switching
t_rr	≤ 40 ns - limits switching node ringing and EMI in synchronous rectifiers
Thermal R_θJA	62 °C/W - defines junction-to-ambient rise under SO-8 PCB layout with 1-in² copper pour

Pinout & Package

IRF7404TRPBF is housed in a standard SO-8 surface-mount package per JEDEC MS-012AA, with exposed drain pads on pins 1, 2, 3, and 4 for enhanced thermal dissipation. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Common high-current output node; electrically tied internally; requires thermal pad connection to PCB ground plane
5	Gate (G)	Control input; accepts −4.5 V logic-level drive; sensitive to ESD (HBM 1.5 kV)
6, 7, 8	Source (S)	Return path for load current; referenced to system ground in low-side configuration

Key Features

Feature	Design Value
Logic-level gate drive	Full enhancement at −4.5 V enables direct interface with microcontroller GPIOs without buffer stages
Low R_DS(on) at V_GS = −4.5 V	0.05 Ω reduces conduction losses by >30% vs. legacy −12 V gate-drive MOSFETs in same footprint
Fast body diode recovery	t_rr ≤ 40 ns minimizes shoot-through risk during dead-time in synchronous buck controllers
SO-8 thermal design	Exposed drain leads allow 2.5× higher power dissipation than standard SO-8 in 1-layer PCB layouts
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 reflow profile; compatible with Pb-free assembly processes

Applications

Portable USB-C Power Delivery

Synchronous Buck Converter

Use Scenario: Bidirectional power path control in USB-C PD sink applications requiring reverse current blocking and low-loss discharge paths.

IC Role / Device Role: Low-side P-channel switch enabling controlled battery discharge while preventing backfeed into input bus.

Use Value: 0.05 Ω R_DS(on) limits voltage drop to <260 mV at 5.3 A, preserving system efficiency across 3.0–5.5 V battery range.

Use Scenario: Synchronous rectifier in 3.3 V output buck converter powered from 5 V rail in embedded IoT nodes.

IC Role / Device Role: Active freewheeling switch replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: Body diode Q_rr = 12 nC and t_rr ≤ 40 ns prevent cross-conduction with high-side FET during dead-time, enabling stable 1 MHz operation.

Battery Protection Circuit

Hot-Swap Controller

Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs using discrete sense-FET architecture.

IC Role / Device Role: Current-sense FET placed between battery cathode and load, monitored via external amplifier.

Use Value: Matched R_DS(on) tolerance (±20%) and low temperature coefficient ensure accurate current sensing across −20 to +85 °C.

Use Scenario: Inrush current limiting and fault isolation in industrial 24 V DC power distribution modules.

IC Role / Device Role: Main pass element in discrete hot-swap controller implementing soft-start and current-limit foldback.

Use Value: Gate charge Q_G = 12 nC allows precise timing of ramp-up with RC-controlled gate driver, achieving <100 ms soft-start without external op-amps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.045 Ω @ −4.5 V; slightly lower Q_G (10.5 nC); same SO-8 package	Marginally better efficiency at 5 A; identical pinout and thermal behavior	Preferred when optimizing for lowest possible conduction loss in space-constrained designs
DMG2305UVT-7	R_DS(on) = 0.055 Ω @ −4.5 V; higher V_GS(th) (−1.2 to −2.8 V); same SO-8	Less consistent turn-on at marginal gate drive; requires verification at 3.3 V logic levels	Acceptable where cost sensitivity outweighs 10% R_DS(on) penalty and gate drive margin is ample

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7404TRPBF offers balanced trade-offs: tighter V_GS(th) distribution for reliable logic-level turn-on, proven body diode ruggedness in CCM buck operation, and broad distributor availability - making it optimal for production-grade portable power designs.

Availability

IRF7404TRPBF is available at Aetrix Electronics and suitable for portable USB-C PD systems, synchronous buck converters, battery protection circuits, and hot-swap controllers requiring stable component supply and long-term manufacturability.

Supply support for IRF7404TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, headquartered in Munich, Germany.

IRF7404TRPBF belongs to Infineon's StrongIRFET™ family - engineered specifically for high-efficiency, high-density DC-DC conversion in battery-powered and space-constrained applications.

FAQ

What is the maximum safe operating junction temperature for IRF7404TRPBF?

The absolute maximum junction temperature is 150 °C per datasheet. Derating begins at 25 °C ambient, with R_θJA = 62 °C/W. At 5.3 A continuous drain current and 0.05 Ω R_DS(on), power dissipation is ~1.4 W - requiring ≥1-in² copper pour to maintain T_J < 125 °C in still air.

Can IRF7404TRPBF be used in a high-side switch configuration?

No - IRF7404TRPBF is optimized for low-side switching due to its P-channel structure and gate drive requirements. High-side use would require gate voltage more negative than source, necessitating complex charge-pump or floating supply circuitry not supported by its design intent or SO-8 thermal layout.

Does IRF7404TRPBF have avalanche rating capability?

No - the datasheet does not specify rated unclamped inductive switching (UIS) energy or avalanche breakdown voltage. It is not characterized for repetitive avalanche operation and must be protected against inductive kickback using external clamping or snubbing networks in relay or motor drive applications.

Is the body diode suitable for continuous freewheeling in buck converters?

Yes - the body diode is rated for continuous forward current up to −5.3 A at T_C = 25 °C, with t_rr ≤ 40 ns and Q_rr = 12 nC. It supports CCM operation in synchronous buck converters up to 1 MHz when paired with appropriate dead-time control to avoid shoot-through.

IRF7404TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 3.2A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7404TRPBF FAQ

1.How can I place an order for IRF7404TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7404TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7404TRPBF reliable?

The price and inventory of IRF7404TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7404TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7404TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7404TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7404TRPBF?

IRF7404TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7404TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7404TRPBF?

For technical support, including IRF7404TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7404TRPBF requirements.

6.How does Aetrix verify that IRF7404TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7404TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7404TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7404TRPBF?

All IRF7404TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7404TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7404TRPBF part is unused and in its original packaging.

Return procedure for IRF7404TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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