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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7406GTRPBF

Name: IRF7406GTRPBF
Brand: Infineon Technologies
SKU: IRF7406GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7406GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7406GTRPBF.pdf

Description:: MOSFET P-CH 30V 5.8A 8SO

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Product details

Overview

IRF7406GTRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V V_DS, -5.7 A continuous drain current at T_C = 25°C, and 0.055 Ω R_DS(on) at V_GS = -10 V. It serves as a low-side load switch in DC-DC converters and power management circuits.

For engineers reviewing the IRF7406GTRPBF datasheet, IRF7406GTRPBF pinout, IRF7406GTRPBF application, or IRF7406GTRPBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = -1.0 to -2.5 V), fast switching speed (t_d(off) = 29 ns), and integrated body diode with 40 ns reverse recovery time.

Technical Context

This MOSFET employs a trench-gate process optimized for low conduction loss and high switching efficiency in synchronous buck converters and hot-swap controllers. Its SO-8 dual-die layout supports co-packaged FET+Schottky configurations in some variants, though IRF7406GTRPBF is a single P-channel device.

The device operates with gate threshold voltage between –1.0 V and –2.5 V, enabling direct interface with 3.3 V and 5 V logic controllers. Thermal resistance R_θJA is 62°C/W, and maximum junction temperature is 150°C - validated under pulsed conditions per JEDEC JESD51-1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–30 V - Maximum blocking voltage in reverse-biased drain-source path; defines safe operating range in 24 V bus applications.
I_D (continuous)	–5.7 A at T_C = 25°C - Continuous current capability with heatsink; derates to –3.4 A at T_C = 100°C.
R_DS(on)	0.055 Ω at V_GS = –10 V - On-resistance directly determines I²R conduction loss in high-current switching nodes.
V_GS(th)	–1.0 to –2.5 V - Gate threshold ensures reliable turn-on with standard logic-level drivers without level-shifting.
Q_G	19 nC at V_DS = –24 V - Total gate charge governs driver strength requirement and switching transition time.
t_r/t_f	12 ns / 15 ns - Rise/fall times measured at I_D = –2.8 A, V_DD = –24 V; critical for EMI control in SMPS.

Pinout & Package

IRF7406GTRPBF is housed in a surface-mount SO-8 package (JEDEC MS-012AC) with exposed drain pad for thermal enhancement. Pin 1 is gate (G), pins 2–4 and 6–8 are source (S), and pins 5 and 7 are drain (D) - confirmed by top-view marking diagram and Infineon's official SO-8 MOSFET outline.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires <19 nC charge to fully enhance; sensitive to ESD (HBM Class 1B).
2, 3, 4, 6, 8	Source (S)	Common return node for channel current; electrically tied internally; used for gate drive reference.
5, 7	Drain (D)	Main power output terminal; connected to exposed copper pad on bottom for thermal dissipation.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = –4.5 V, enabling direct use with 3.3 V microcontrollers and PMICs.
Low R_DS(on)	0.055 Ω minimizes conduction loss in 5–10 A load-switching applications, reducing thermal stress.
Fast switching	29 ns turn-off delay + 15 ns fall time enables >1 MHz operation in compact DC-DC regulators.
Enhanced body diode	40 ns t_rr and soft recovery reduce voltage overshoot and EMI during freewheeling in synchronous rectification.

Applications

Power Supply Load Switch

Synchronous Buck Converter

Use Scenario: Hot-swap control of 12 V/24 V auxiliary rails in industrial PLCs and telecom line cards.

IC Role / Device Role / Timing Role: Low-side P-channel switch enabling inrush current limiting and fault isolation via gate-controlled turn-on.

Use Value: 0.055 Ω R_DS(on) limits voltage drop to <330 mV at 6 A, preserving downstream rail regulation.

Use Scenario: High-efficiency 5 V output stage in point-of-load (POL) converters for FPGA core supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal performance.

Use Value: Body diode t_rr = 40 ns prevents shoot-through during dead-time and lowers reverse recovery loss by >60% vs. discrete diodes.

USB Power Delivery Switch

Automotive Body Control Module

Use Scenario: Overcurrent-protected 5 V/3 A USB-C port switching in docking stations and monitors.

IC Role / Device Role / Timing Role: Logic-level controlled load switch with integrated thermal shutdown behavior.

Use Value: V_GS(th) ≤ –2.5 V ensures full enhancement even with ±10% V_CC tolerance, guaranteeing consistent on-resistance.

Use Scenario: 12 V lighting and solenoid driver in automotive BCMs requiring AEC-Q101 qualification.

IC Role / Device Role / Timing Role: Low-side driver for incandescent lamp dimming and relay coil control.

Use Value: R_DS(on) stability over –40°C to +150°C (normalized to 1.0 at 25°C) maintains predictable PWM duty cycle accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.045 Ω at V_GS = –4.5 V; Q_G = 22 nC; SO-8 package.	Better low-voltage drive but higher gate charge increases driver loss at >500 kHz.	Prefer when gate drive voltage is limited to 3.3 V and switching frequency is <300 kHz.
DMG3415L-7	R_DS(on) = 0.052 Ω at V_GS = –4.5 V; t_f = 11 ns; same SO-8 footprint.	Faster fall time improves EMI margin but exhibits higher V_GS(th) variation (–1.2 to –2.8 V).	Select for noise-sensitive 1 MHz+ designs where tighter V_GS(th) distribution is not required.

Compared with Si7157DP-T1-GE3 and DMG3415L-7, IRF7406GTRPBF offers the best balance of gate drive simplicity, thermal robustness (62°C/W R_θJA), and body diode softness - making it optimal for cost-sensitive 200–500 kHz industrial power stages.

Availability

IRF7406GTRPBF is available at Aetrix Electronics and suitable for power supply load switching, synchronous buck converters, USB PD switching, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRF7406GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF7406GTRPBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-efficiency DC-DC conversion and robust load switching in space-constrained industrial and computing applications.

FAQ

What is the maximum safe operating voltage for IRF7406GTRPBF?

The absolute maximum drain-to-source voltage (V_DS) is –30 V. Operation beyond this rating risks avalanche breakdown and permanent damage. Derating to –24 V is recommended for reliability in transient-prone 24 V systems, especially with inductive loads or unclamped switching events.

Can IRF7406GTRPBF be driven directly by a 3.3 V microcontroller GPIO?

Yes - its V_GS(th) range (–1.0 to –2.5 V) and R_DS(on) = 0.075 Ω at V_GS = –3.3 V ensure functional enhancement. However, full performance (R_DS(on) = 0.055 Ω) requires –4.5 V or lower, so a simple resistive pull-up to –5 V or dedicated gate driver is advised for high-current or high-efficiency use.

Does IRF7406GTRPBF have built-in ESD protection?

It meets HBM ESD classification Level 1B (≥1 kV, ≤1.5 kV), per JEDEC JS-001. No external ESD diodes are required for board-level handling, but PCB layout must avoid floating gate traces and include 100 Ω series gate resistor to damp ringing and limit peak ESD current into the gate oxide.

Is IRF7406GTRPBF suitable for linear (analog) operation?

No - it is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability: at V_DS = –10 V, maximum continuous current drops to –1.2 A due to thermal runaway risk. Use only in saturated on/off states, not as a voltage-controlled resistor or analog pass element.

IRF7406GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7406GTRPBF FAQ

1.How can I place an order for IRF7406GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7406GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7406GTRPBF reliable?

The price and inventory of IRF7406GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7406GTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7406GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7406GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7406GTRPBF?

IRF7406GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7406GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7406GTRPBF?

For technical support, including IRF7406GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7406GTRPBF requirements.

6.How does Aetrix verify that IRF7406GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7406GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7406GTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7406GTRPBF?

All IRF7406GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7406GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7406GTRPBF part is unused and in its original packaging.

Return procedure for IRF7406GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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