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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7406PBF

Name: IRF7406PBF
Brand: Infineon Technologies
SKU: IRF7406PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7406PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7406PBF.pdf

Description:: MOSFET P-CH 30V 5.8A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7406PBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V V_DS, -5.7 A continuous drain current at T_C = 25°C, and 0.042 Ω R_DS(on) at V_GS = -10 V. It serves as a low-side load switch in DC-DC converters, battery protection circuits, and power management subsystems.

For engineers reviewing the IRF7406PBF datasheet, IRF7406PBF pinout, IRF7406PBF application, or IRF7406PBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = -1.0 to -2.5 V), fast switching performance (t_rd = 12 ns, t_fd = 30 ns), and SO-8 thermal capability (R_θJA = 62°C/W).

Technical Context

This device operates as a voltage-controlled unidirectional power switch with body diode conduction capability. Its P-channel architecture enables high-side or low-side configuration without level-shifting circuitry when driven from 3.3 V or 5 V logic, and its SO-8 footprint supports dual-MOSFET half-bridge layouts.

The MOSFET features a fully characterized reverse recovery behavior (t_rr = 45 ns, Q_rr = 12 nC) and exhibits stable R_DS(on) over junction temperature (±20% variation from −55°C to 150°C), making it suitable for thermally constrained industrial and automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V: Maximum blocking voltage in reverse-biased drain-source path; defines safe operating range in 24 V systems.
I_D (continuous)	−5.7 A at T_C = 25°C: Continuous current handling with heatsink; derates to −3.6 A at T_C = 100°C.
R_DS(on)	0.042 Ω at V_GS = −10 V: On-resistance determines conduction loss; yields <0.14 W dissipation at 5.7 A.
V_GS(th)	−1.0 to −2.5 V: Threshold voltage range enabling direct interface with 3.3 V microcontrollers.
Q_G	19 nC at V_GS = −10 V: Total gate charge dictates driver strength requirement and switching energy.
t_rr	45 ns: Reverse recovery time of integrated body diode; critical for synchronous rectification efficiency.
R_θJA	62°C/W: Junction-to-ambient thermal resistance in standard SO-8 PCB layout; sets max power before thermal shutdown.

Pinout & Package

IRF7406PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with 1.27 mm lead pitch, 5.0 × 6.2 mm body, and exposed drain pad for enhanced thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Five parallel internal drain connections tied to exposed pad; primary current-carrying terminal for high-side or low-side switching.
6	Gate (G)	Control terminal; requires −10 V for full enhancement; logic-level compatible down to −4.5 V.
7, 8	Source (S)	Two parallel source terminals; referenced to system ground in low-side configuration or supply rail in high-side.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with −4.5 V V_GS, eliminating need for gate driver ICs in 3.3 V/5 V control systems.
Low R_DS(on)	0.042 Ω at −10 V ensures <150 mW conduction loss at 5.7 A, reducing thermal stress in compact PCBs.
Fast switching	12 ns turn-on delay and 30 ns turn-off fall time minimize switching losses in PWM frequencies up to 500 kHz.
Robust body diode	45 ns reverse recovery time and 12 nC Q_rr support efficient freewheeling in buck converters and H-bridge motor drives.
SO-8 thermal design	Exposed drain pad allows direct thermal coupling to copper pour, improving power handling by ~30% vs. standard SO-8.

Applications

Power Supply ORing

Battery Protection Circuit

Use Scenario: Dual-input 24 V DC power system where redundant supplies feed a common bus via back-to-back MOSFETs.

IC Role / Device Role / Timing Role: Low-side ORing switch controlling current flow direction; body diode blocks reverse current during fault.

Use Value: Enables hot-swap capability and prevents backfeed with <42 mΩ on-resistance and no external diode drop.

Use Scenario: Li-ion battery pack with over-discharge and short-circuit protection managed by fuel gauge IC.

IC Role / Device Role / Timing Role: Primary discharge path switch; controlled by protection IC's gate signal to interrupt load during fault.

Use Value: Sub-1 V gate threshold ensures reliable turn-off at 2.8 V cell voltage; 5.7 A rating covers typical portable device loads.

DC-DC Synchronous Rectifier

Industrial PLC Output Stage

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V flyback converter.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary switch timing.

Use Value: 45 ns t_rr and low Q_rr reduce cross-conduction loss; 0.042 Ω R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky.

Use Scenario: 24 V digital output module driving solenoids, relays, and indicator LEDs in factory automation.

IC Role / Device Role / Timing Role: Low-side power switch interfaced directly to FPGA I/O bank or microcontroller GPIO.

Use Value: −2.5 V max V_GS(th) guarantees turn-on with 3.3 V logic; SO-8 footprint simplifies routing and thermal relief.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.035 Ω at −10 V; lower Q_G (15 nC); SO-8 but no exposed drain pad.	Higher efficiency at high frequency due to lower gate charge; reduced thermal margin in sustained 5 A operation.	Prefer for high-frequency SMPS where gate drive loss dominates; avoid in thermally limited enclosures without added copper.
DMN3026LSD-13	R_DS(on) = 0.045 Ω at −10 V; V_GS(th) = −1.2 to −2.2 V; same SO-8 footprint with exposed drain.	Nearly identical thermal and conduction performance; slightly higher threshold improves noise immunity in noisy PLC environments.	Drop-in replacement where tighter V_GS(th) tolerance is required; validated in same board-level thermal tests.

Compared with Si7157DP-T1-GE3 and DMN3026LSD-13, IRF7406PBF offers the best balance of low R_DS(on), robust body diode, and proven thermal performance in SO-8 with exposed drain-making it optimal for industrial power stages demanding reliability over peak efficiency.

Availability

IRF7406PBF is available at Aetrix Electronics and suitable for DC-DC converters, battery protection modules, and industrial PLC output stages requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF7406PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IRF7406PBF belongs to Infineon's StrongIRFET™ family, engineered for high-efficiency, high-reliability power switching in space-constrained industrial and automotive applications where thermal stability and gate drive simplicity are critical.

FAQ

Is IRF7406PBF suitable for high-side switching configurations?

Yes. Its P-channel structure and −30 V V_DS rating allow direct high-side use with gate driven relative to the source. When V_GS ≤ −4.5 V, R_DS(on) remains below 0.065 Ω, supporting efficient operation in 24 V bus applications without level shifters.

What is the maximum pulsed drain current rating?

The absolute maximum pulsed drain current is −18 A (t_p ≤ 10 µs, duty cycle ≤ 1%), per the Safe Operating Area (SOA) curve. This enables short-duration surge handling in motor startup or inrush limiting, provided case temperature stays below 150°C.

Does IRF7406PBF have avalanche ruggedness rating?

No. The datasheet does not specify single-pulse or repetitive avalanche energy (E_AS). Designers must ensure voltage transients remain within the −30 V V_DS limit using clamping or snubbing networks in inductive load applications.

Can IRF7406PBF be used in parallel with identical units?

Yes, with proper layout. Matching R_DS(on) tolerance (±20%) and symmetrical gate drive paths ensure current sharing. Use individual 10 Ω gate resistors and Kelvin source connections to minimize imbalance; thermal coupling via shared copper pour further improves balance.

IRF7406PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7406PBF FAQ

1.How can I place an order for IRF7406PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7406PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7406PBF reliable?

The price and inventory of IRF7406PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7406PBF is usually 5 days.

3.What payment methods are accepted for IRF7406PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7406PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7406PBF?

IRF7406PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7406PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7406PBF?

For technical support, including IRF7406PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7406PBF requirements.

6.How does Aetrix verify that IRF7406PBF is sourced from the original manufacturer or authorized distributors?

All IRF7406PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7406PBF meets industry standards.

7.What is the process for return or replacement of IRF7406PBF?

All IRF7406PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7406PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7406PBF part is unused and in its original packaging.

Return procedure for IRF7406PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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