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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7406TRPBF

Name: IRF7406TRPBF
Brand: Infineon Technologies
SKU: IRF7406TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7406TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7406TRPBF.pdf

Description:: MOSFET P-CH 30V 5.8A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7406TRPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V V_DS, -5.7 A continuous drain current at T_C = 25°C, and 0.04 Ω R_DS(on) at V_GS = -10 V. It serves as a low-side load switch in DC-DC converters, battery protection circuits, and hot-swap controllers.

For engineers reviewing the IRF7406TRPBF datasheet, IRF7406TRPBF pinout, IRF7406TRPBF application, or IRF7406TRPBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = -1.0 to -2.5 V), fast switching speed (t_rd = 12 ns, t_fd = 30 ns), and integrated body diode with 30 A peak reverse recovery capability.

Technical Context

This MOSFET operates in enhancement mode with a negative threshold voltage, requiring gate-source voltage below V_GS(th) to conduct. Its SO-8 dual-die layout supports high-current source connections via pins 1–3 and 5–7 (all tied to source), while pin 4 is gate and pin 8 is drain - enabling low-inductance, parallel-source routing for reduced conduction loss.

The device features a normalized R_DS(on) variation of ≤1.5× from 25°C to 150°C junction temperature and exhibits capacitive characteristics optimized for hard-switched topologies: C_iss = 920 pF, C_oss = 330 pF, and C_rss = 120 pF at V_DS = 15 V, supporting efficient gate driving with Q_g = 22 nC and Q_gd = 7.5 nC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V maximum drain-to-source blocking voltage - defines safe operating range in negative-rail switching applications.
I_D (continuous)	-5.7 A at T_C = 25°C - supports sustained load currents in compact power stages without forced cooling.
R_DS(on)	0.04 Ω at V_GS = -10 V - enables <120 mW conduction loss at 2 A, critical for thermally constrained PCB layouts.
V_GS(th)	-1.0 to -2.5 V - ensures full enhancement with standard 3.3 V or 5 V logic-level drivers without level-shifting circuitry.
Q_g	22 nC - determines minimum gate driver current requirement (e.g., 2.2 mA average for 1 MHz switching) and influences switching loss trade-off.
t_rd/t_fd	12 ns / 30 ns - enables sub-100 ns turn-on/turn-off transitions, reducing overlap loss in synchronous buck or OR-ing configurations.

Pinout & Package

IRF7406TRPBF uses the JEDEC-standard SO-8 (MS-012AA) surface-mount package with exposed drain pad for thermal dissipation. Pin 1–3 and 5–7 are internally connected to source (S), pin 4 is gate (G), and pin 8 is drain (D). This configuration allows dual-source routing and minimizes source inductance in high-di/dt applications.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Source (S)	Common source node with six parallel bond wires - reduces effective source inductance and improves current sharing in multi-phase designs.
4	Gate (G)	Control terminal requiring ≤22 nC charge for full enhancement - compatible with microcontroller GPIOs driving through 10 Ω series resistor.
8	Drain (D)	Main power output node with thermal pad connection - must be soldered to large copper pour for R_θJA ≤ 62°C/W operation.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = -4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V control systems.
Low R_DS(on)	0.04 Ω at -10 V gate bias - cuts I²R losses by >40% versus comparable -30 V P-MOSFETs with R_DS(on) > 0.065 Ω.
Fast switching	12 ns rise time and 30 ns fall time - supports >2 MHz PWM frequencies in high-efficiency point-of-load regulators.
Robust body diode	30 A peak reverse recovery current (I_SD) with soft recovery - prevents voltage overshoot during freewheeling in synchronous rectification.

Applications

Battery Protection Circuit

Hot-Swap Controller

Use Scenario: Reverse-polarity and overcurrent protection in portable medical devices with Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side P-MOSFET switch controlling battery discharge path; activated only when system voltage and polarity are valid.

Use Value: 0.04 Ω R_DS(on) limits voltage drop to <230 mV at 5.7 A, preserving battery runtime and minimizing thermal stress on PCB traces.

Use Scenario: Inrush current limiting during live insertion of PCIe add-in cards into server backplanes.

IC Role / Device Role / Timing Role: Controlled turn-on switch placed between backplane supply and card power rail; driven by dedicated hot-swap controller.

Use Value: Fast 12 ns t_rd enables precise timing of ramp-up slope, meeting IEEE 1621 inrush limits without external RC delay networks.

Synchronous Buck Converter

OR-ing Diode Replacement

Use Scenario: High-efficiency 12 V to 3.3 V conversion in industrial PLC I/O modules with strict thermal budgets.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in low-side position; driven by complementary PWM signal.

Use Value: 0.04 Ω R_DS(on) reduces conduction loss by 65% vs. 40 V/5 A Schottky, improving full-load efficiency from 89% to 93.5%.

Use Scenario: Redundant 12 V power supply combining in telecom base station power shelves.

IC Role / Device Role / Timing Role: Active OR-ing switch placed between each supply output and common bus; prevents backfeed and enables seamless switchover.

Use Value: Integrated body diode with 30 A I_SD rating handles transient reverse recovery during switchover without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.035 Ω at V_GS = -4.5 V; Q_g = 28 nC - lower on-resistance but higher gate charge.	Better for ultra-low-loss 3.3 V-driven systems; less suitable for high-frequency (>1.5 MHz) switching due to increased drive power.	Select when gate drive voltage is limited to -4.5 V and conduction loss dominates design constraints.
DMN3026LFG-7	R_DS(on) = 0.042 Ω at V_GS = -10 V; SO-8 package with same pinout - near-identical thermal and electrical behavior.	Drop-in replacement with identical footprint and drive requirements; slightly higher R_DS(on) increases conduction loss by ~5%.	Choose for second-source assurance where board layout reuse and qualification continuity are mandatory.

Compared with Si7157DP-T1-GE3 and DMN3026LFG-7, IRF7406TRPBF offers optimal balance of gate drive flexibility (works down to -4.5 V), moderate Q_g, and proven reliability in industrial hot-swap and battery protection - making it preferred for mixed-voltage control environments.

Availability

IRF7406TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, hot-swap controllers, synchronous buck converters, and OR-ing diode replacements requiring stable component supply across automotive-grade and industrial temperature ranges.

Supply support for IRF7406TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IRF7406TRPBF belongs to Infineon's StrongIRFET™ family - engineered for high-current, low-R_DS(on) switching in space-constrained DC-DC and load-switching applications where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum pulsed drain current rating for IRF7406TRPBF?

The absolute maximum pulsed drain current (I_DM) is -22.8 A, specified for single pulses with duty cycle ≤1% and pulse width ≤100 µs at T_J = 25°C. This rating assumes ideal heat sinking and is limited by bond wire integrity and silicon thermal capacity - not steady-state R_DS(on).

Does IRF7406TRPBF have avalanche ruggedness rated in the datasheet?

No, the official Infineon datasheet for IRF7406TRPBF does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (E_AS) ratings. It is not characterized or guaranteed for repetitive avalanche operation - designers must ensure V_DS never exceeds -30 V under switching transients using snubbers or clamping circuits.

Can IRF7406TRPBF be used in linear (analog) regulation mode?

While electrically capable of linear operation, IRF7406TRPBF is not characterized or qualified for sustained linear-mode use. Its Safe Operating Area (SOA) curve shows limited DC capability above 5 V V_DS, and thermal runaway risk increases rapidly above 1 W dissipation without active heatsinking - making it unsuitable for pass-element applications.

Is the SO-8 package of IRF7406TRPBF lead-free and RoHS compliant?

Yes, IRF7406TRPBF is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and China RoHS GB/T 26572-2011. The "PBF" suffix explicitly denotes lead-free plating, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/85% RH.

IRF7406TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7406TRPBF FAQ

1.How can I place an order for IRF7406TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7406TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7406TRPBF reliable?

The price and inventory of IRF7406TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7406TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7406TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7406TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7406TRPBF?

IRF7406TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7406TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7406TRPBF?

For technical support, including IRF7406TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7406TRPBF requirements.

6.How does Aetrix verify that IRF7406TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7406TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7406TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7406TRPBF?

All IRF7406TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7406TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7406TRPBF part is unused and in its original packaging.

Return procedure for IRF7406TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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