Infineon Technologies IRF7410GTRPBF

Overview

IRF7410GTRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in portable and battery-powered systems. It features -12 V V_DS, 7 mΩ R_DS(on) at V_GS = -4.5 V, -16 A continuous drain current at T_A = 25°C, integrated body diode with 97 ns t_rr, and SO-8 surface-mount package optimized for thermal performance in space-constrained DC-DC and power OR-ing applications.

For engineers reviewing the IRF7410GTRPBF datasheet, IRF7410GTRPBF pinout, IRF7410GTRPBF application, or IRF7410GTRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (-1.8 V threshold), pulsed current capability (-65 A I_DM), junction-to-ambient thermal resistance (50 °C/W), and SO-8 leadframe enhancements enabling multi-die board integration without thermal derating penalties.

Technical Context

This MOSFET operates as a synchronous rectifier or high-side load switch in 3.3 V/5 V logic-controlled power rails. Its -0.4 V to -0.9 V gate threshold enables reliable turn-on with standard CMOS outputs, while the 91 nC total gate charge supports moderate-speed switching (t_d(off) = 407 ns max) without excessive driver loss.

The device integrates a fast-recovery body diode (t_rr = 145 ns max, Q_rr = 201 µC) and exhibits strong temperature stability: R_DS(on) increases only 2× from 25°C to 125°C, and V_GS(th) shifts -3.09 mV/°C - critical for thermally robust battery disconnect circuits.

Key Specifications

Pinout & Package

IRF7410GTRPBF uses the modified SO-8 package with enhanced thermal leadframe and multiple-die capability. The package supports vapor phase, infrared, and wave soldering and delivers improved thermal performance over standard SO-8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with Si7157DP-T1-GE3 and DMG1012T-7, IRF7410GTRPBF offers the lowest R_DS(on) and highest continuous current in SO-8, making it optimal for high-power-density 12 V load switching where thermal management is constrained.

Availability

IRF7410GTRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, industrial 24 V OR-ing modules, and automotive body control applications requiring stable component supply and long-term manufacturability.

Supply support for IRF7410GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap device physics.

The HEXFET® Power MOSFET product line - including IRF7410GTRPBF - was engineered specifically for high-efficiency, low-voltage load switching in portable, industrial, and automotive power systems.

FAQ

What is the maximum safe operating voltage for IRF7410GTRPBF in continuous DC operation?

The absolute maximum drain-to-source voltage is -12 V. Operation beyond this rating risks avalanche breakdown and permanent damage. In practice, design margins require limiting V_DS to ≤ -10 V for sustained reliability, especially under transient conditions like load dump or inductive kickback in automotive environments.

Can IRF7410GTRPBF be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage ranges from -0.4 V to -0.9 V, ensuring full enhancement at V_GS = -3.3 V. However, R_DS(on) will be ~13 mΩ (vs. 7 mΩ at -4.5 V), increasing conduction loss by ~85%. For optimal efficiency, use a dedicated gate driver or level shifter when 3.3 V logic must control full 16 A loads.

Does IRF7410GTRPBF include an integrated body diode, and what are its key parameters?

Yes - it features a monolithic integral p-n junction body diode rated for -2.5 A continuous forward current and -65 A pulsed current. Key specs include V_SD = -1.2 V at -2.5 A, t_rr = 145 ns max, and Q_rr = 201 µC, enabling use in synchronous rectification and bidirectional current paths without external diodes.

How does the SO-8 package modification improve thermal performance compared to standard SO-8?

The customized leadframe increases copper cross-section at drain and source terminals, reducing thermal resistance from junction to ambient by ~20% (R_θJA = 50 °C/W vs. typical 62 °C/W). This allows 2.5 W dissipation at 70°C ambient - sufficient for 16 A loads on 1-in² PCB - and supports multi-die configurations without thermal crosstalk.