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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7410PBF

Name: IRF7410PBF
Brand: Infineon Technologies
SKU: IRF7410PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7410PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7410PBF.pdf

Description:: MOSFET P-CH 12V 16A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:2,547

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Product details

Overview

IRF7410PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET power MOSFET in SO-8 package, rated for -12 V V_DS, 7 mΩ R_DS(on) at V_GS = -4.5 V, and -16 A continuous drain current at T_A = 25°C. It integrates a low-loss body diode and is optimized for high-efficiency battery protection, load switching, and power OR-ing in portable and industrial DC systems.

For engineers reviewing the IRF7410PBF datasheet, IRF7410PBF pinout, IRF7410PBF application, or IRF7410PBF equivalent, key selection criteria include its ultra-low on-resistance at logic-level gate drive (-4.5 V), thermal performance in SO-8 with modified leadframe, pulsed current capability (-65 A), and body diode recovery characteristics (t_rr = 97–145 ns).

Technical Context

This MOSFET operates as a single-polarity, surface-mount power switch with a built-in integral reverse p-n junction body diode. Its gate threshold voltage ranges from -0.4 V to -0.9 V, enabling reliable turn-on with low-voltage control signals, while its negative temperature coefficient for R_DS(on) supports current sharing in parallel configurations.

The device uses advanced silicon processing to achieve 7 mΩ R_DS(on) at -4.5 V gate drive and exhibits 91 nC total gate charge, supporting moderate-speed switching in DC-DC converters and hot-swap circuits. Thermal resistance is specified at 50 °C/W (junction-to-ambient, mounted on 1 in² Cu board).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for low-voltage battery-side switching
R_DS(on)	7 mΩ @ V_GS = -4.5 V - Enables <100 mW conduction loss at 16 A, critical for thermal management in compact layouts
I_D (continuous)	-16 A @ T_A = 25°C - Supports high-current load switching without external heatsink in ambient-cooled designs
Q_g	91 nC - Determines gate driver strength requirement; compatible with standard logic-level drivers (e.g., TC4427)
t_rr	97–145 ns - Limits reverse recovery losses in synchronous rectification and bidirectional power paths
R_θJA	50 °C/W - Specifies thermal derating slope (20 mW/°C) when mounted on 1 in² copper PCB area
V_GS(th)	-0.4 to -0.9 V - Ensures guaranteed turn-on with 3.3 V or 5 V microcontroller GPIOs

Pinout & Package

IRF7410PBF is housed in a thermally enhanced SO-8 package with exposed drain pads and customized leadframe for improved heat dissipation. The package supports vapor phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Common high-current output node; pins 1–5 and 7–8 are internally paralleled for low-inductance, high-current routing
6	Gate (G)	Control input; requires ≤ ±8 V drive; sensitive to ESD (±100 nA leakage max)
Source (S)	Source (S)	Reference node for gate drive and load return; pins 3 and 4 are source terminals (dual-source configuration)

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7 mΩ @ -4.5 V enables >95% efficiency in 5–12 V load switches at 10–15 A
Logic-level gate drive	V_GS(th) ≤ -0.9 V ensures full enhancement with 3.3 V MCU outputs without level-shifting
Enhanced SO-8 thermal design	Modified leadframe reduces R_θJA by ~20% vs. standard SO-8, supporting higher sustained current
Fast body diode	t_rr = 97 ns minimizes shoot-through risk and conduction loss in OR-ing and reverse polarity protection
Lead-free & RoHS-compliant	Pb-free plating and halogen-free molding compound meet IPC/JEDEC J-STD-020 reflow standards

Applications

Battery Protection Circuit

Hot-Swap Controller

Use Scenario: Reverse polarity and overcurrent protection in 2-cell Li-ion battery packs (8.4 V nominal).

IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery connection to system rail; activated/deactivated by protection IC (e.g., BQ297xx).

Use Value: 7 mΩ R_DS(on) limits voltage drop to <112 mV at 16 A, preserving battery runtime and reducing thermal stress on PCB traces.

Use Scenario: Inrush current limiting and fault isolation during live insertion of PCIe add-in cards or modular servers.

IC Role / Device Role / Timing Role: Main power path switch controlled by hot-swap controller (e.g., LM5066) via gate resistor network.

Use Value: Low Q_g (91 nC) and fast turn-off (t_f = 200–300 ns) enable precise current limiting and rapid fault shutdown (<10 µs response).

Power OR-ing Diode Replacement

USB-C Power Delivery Load Switch

Use Scenario: Replacing Schottky diodes in redundant 5–12 V DC power supplies to reduce forward drop and heat generation.

IC Role / Device Role / Timing Role: Active OR-ing switch placed between two independent DC sources and common bus; body diode conducts until gate is driven.

Use Value: Body diode V_SD = -1.2 V and t_rr = 97 ns allow seamless transition to synchronous conduction, cutting power loss by >70% vs. 40 V Schottky.

Use Scenario: USB-C port power path control in host devices requiring 5 V/3 A or 9 V/2 A delivery with reverse-blocking capability.

IC Role / Device Role / Timing Role: Load switch isolating downstream USB-C sink from upstream PD controller; gate driven by dedicated PD policy engine.

Use Value: -12 V V_DS rating exceeds USB-C max 20 V fault tolerance, and dual-source pinout simplifies PCB layout for low-impedance return paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 8.5 mΩ @ -4.5 V; Q_g = 72 nC; SO-8 package with similar pinout	Slightly higher conduction loss but lower gate charge improves switching efficiency in high-frequency (>100 kHz) OR-ing	Prefer for higher-frequency operation where gate drive loss dominates
DMG1012T-7	R_DS(on) = 12 mΩ @ -4.5 V; I_D = -10 A; SOT-23-6 package; no integrated thermal pad	Lower current rating and inferior thermal performance limit use to <5 A loads with forced air cooling	Select only for space-constrained, low-power (<3 W) applications where SO-8 footprint is prohibitive

Compared with Si7157DP and DMG1012T, IRF7410PBF delivers the lowest R_DS(on) in SO-8 at logic-level drive, making it optimal for high-current, thermally constrained battery and load management-while alternatives trade conduction loss for gate drive simplicity or package size.

Availability

IRF7410PBF is available at Aetrix Electronics and suitable for battery protection circuits, hot-swap controllers, and power OR-ing applications requiring stable component supply, long-term industrial availability, and RoHS-compliant sourcing.

Supply support for IRF7410PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF7410PBF belongs to Infineon's HEXFET® logic-level P-channel MOSFET product line, engineered specifically for high-efficiency, low-voltage DC power switching in portable, computing, and telecom infrastructure applications.

FAQ

What is the maximum safe operating voltage for IRF7410PBF in continuous DC blocking?

The absolute maximum drain-to-source voltage (V_DS) is -12 V. Exceeding this rating-even briefly-risks avalanche breakdown and permanent device failure. Designers must ensure all transient conditions (e.g., inductive kick, load dump) remain within this limit, typically using clamping circuits or selecting higher-V_DS devices for margin-critical applications.

Can IRF7410PBF be used in parallel configurations for higher current handling?

Yes-its negative temperature coefficient for R_DS(on) promotes natural current sharing. However, matched gate resistors (≤1 Ω) and symmetrical PCB layout (equal trace length/width to each device) are mandatory. Parallel operation beyond -32 A requires thermal derating per R_θJA and verification of gate drive stability under dynamic load imbalance.

Does IRF7410PBF require a gate resistor, and what value is recommended?

A series gate resistor is required to dampen ringing and limit peak gate current. For typical 3.3 V/5 V MCU drive, 10–22 Ω is recommended. Lower values (≤5 Ω) may cause overshoot and EMI; higher values (>47 Ω) increase switching time and conduction loss. Layout parasitics must also be minimized to maintain signal integrity.

How does the body diode performance impact reverse current applications like OR-ing?

The body diode has V_SD = -1.2 V at -2.5 A and t_rr = 97–145 ns. In OR-ing, this enables fast turn-off to prevent backfeed, but its forward drop still contributes to power loss. To minimize this, gate drive must engage rapidly after diode conduction begins-typically within 100–200 ns-to transition into low-R_DS(on) synchronous conduction mode.

IRF7410PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 16A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 91 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 8676 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IRF7410PBF FAQ

1.How can I place an order for IRF7410PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7410PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7410PBF reliable?

The price and inventory of IRF7410PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7410PBF is usually 5 days.

3.What payment methods are accepted for IRF7410PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7410PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7410PBF?

IRF7410PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7410PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7410PBF?

For technical support, including IRF7410PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7410PBF requirements.

6.How does Aetrix verify that IRF7410PBF is sourced from the original manufacturer or authorized distributors?

All IRF7410PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7410PBF meets industry standards.

7.What is the process for return or replacement of IRF7410PBF?

All IRF7410PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7410PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7410PBF part is unused and in its original packaging.

Return procedure for IRF7410PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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