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Infineon Technologies IRF7413GTRPBF
- Part No.:
- IRF7413GTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7413GTRPBF.pdf
- Description:
- MOSFET N-CH 30V 13A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,379
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Product details
Overview
IRF7413GTRPBF from Infineon Technologies is a 30 V, 7.3 A N-channel MOSFET in SO-8 package with RDS(on) = 3.1 mΩ @ VGS = 10 V, optimized for high-efficiency DC-DC synchronous buck converters in notebook and tablet power management systems.
For engineers reviewing the IRF7413GTRPBF datasheet, IRF7413GTRPBF pinout, IRF7413GTRPBF application, or IRF7413GTRPBF equivalent, key selection criteria include low RDS(on), fast switching (tr = 50 ns, tf = 46 ns), integrated body diode recovery (Qrr = 200–300 nC), and SO-8 thermal performance (RθJA = 50 °C/W).
Technical Context
This dual-die SO-8 MOSFET integrates two identical N-channel enhancement-mode silicon devices sharing common source terminals - configured as a complementary pair for synchronous rectification. It supports gate drive voltages from 4.5 V to 20 V and exhibits stable threshold voltage (VGS(th) = 1.0–3.0 V) across -55°C to +150°C junction range.
The device features low output capacitance (Coss = 680 pF) and reverse transfer capacitance (Crss = 240 pF), enabling high-frequency operation up to 1 MHz in point-of-load regulators. Its 260°C reflow-rated SO-8 package ensures compatibility with standard SMT assembly processes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V input rail applications with 2× safety margin |
| RDS(on) @ VGS = 10 V | 3.1 mΩ - Enables ≤120 mW conduction loss at 7.3 A continuous current |
| Qg | 52–79 nC - Determines gate drive strength requirement for <50 ns switching transitions |
| ID @ TA = 25°C | 13 A - Continuous current rating under ideal heatsink conditions |
| tr/tf | 50/46 ns - Supports >500 kHz PWM frequency without excessive switching loss |
| Qrr | 200–300 nC - Quantifies body diode recovery charge affecting shoot-through risk in sync-buck topologies |
| RθJA | 50 °C/W - Predicts ~65°C junction rise above ambient at 13 A with no PCB copper pour |
Pinout & Package
IRF7413GTRPBF uses a standard SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin 1 is Gate of Channel 1; Pins 2–4 are Source 1 / Drain 2 / Source 2; Pins 5–8 are Drain 1 / Gate 2 / Source 1 / Source 2 - forming dual N-channel configuration with shared source terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate 1 | Controls first N-channel channel; requires 10 V logic-level drive for full enhancement |
| Pins 2, 3, 4 | Source 1 / Drain 2 / Source 2 | Shared source node for both channels; pins 2 & 4 are electrically tied internally |
| Pins 5, 8 | Drain 1 / Drain 2 | Independent high-current drain paths; connected to PCB thermal pad for heat dissipation |
| Pins 6, 7 | Gate 2 / Source 1 | Second gate input; pin 7 is redundant source connection reinforcing low-inductance return path |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 3.1 mΩ @ 10 V enables >95% efficiency in 5 V–12 V input buck converters |
| Fast body diode recovery | trr = 74–110 ns and Qrr = 200–300 nC reduce cross-conduction losses in synchronous rectification |
| SO-8 with exposed drain pad | Thermal resistance RθJL = 20 °C/W improves power handling vs. standard SO-8 |
| 100% RG tested | Guarantees gate resistance ≤3.7 Ω, ensuring consistent turn-on timing across production lots |
| Halogen-free & RoHS compliant | Meets IPC-1752A material declaration requirements for consumer electronics manufacturing |
Applications
| Notebook CPU Core VRM | Tablet PMIC Output Stage |
|---|---|
Use Scenario: High-current, space-constrained 1–2 phase core voltage regulator delivering up to 25 A to Intel/AMD mobile processors. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz with interleaved gate drive signals. Use Value: 3.1 mΩ RDS(on) reduces conduction loss by 35% versus 4.8 mΩ alternatives, lowering thermal load on compact PCBs. | Use Scenario: Dual-phase 3.3 V/5 V system power rail in ultra-thin tablets with strict height and thermal limits. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck converter paired with external high-side controller. Use Value: Fast 50 ns rise time and 240 pF Crss minimize Miller-induced delay, improving duty cycle accuracy at 1 MHz switching. |
| USB-C PD Sink Converter | Industrial SMPS Auxiliary Rail |
Use Scenario: 20 V input to 5 V/9 V/15 V programmable output converter supporting USB Power Delivery negotiation. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp flyback topology. Use Value: 1.0 V VSD body diode forward drop and 74 ns trr enable efficient light-load regulation without external Schottky. | Use Scenario: 24 V industrial input to isolated 3.3 V/5 V auxiliary supply powering microcontrollers and sensors. IC Role / Device Role / Timing Role: Primary-side high-side switch in self-oscillating flyback controller IC reference design. Use Value: 30 V VDS rating provides 2× margin over 24 V nominal input, ensuring robustness against line transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 3.3 mΩ @ 10 V; Ciss = 1950 pF (vs. 1800 pF); SO-8 with same pinout | Slightly higher gate charge (85 nC) increases driver loss in high-frequency designs | Prefer when needing tighter VGS(th) distribution (1.2–2.2 V) over IRF7413GTRPBF's 1.0–3.0 V range |
| IPB80N04S4-02 | TO-263 package; RDS(on) = 2.0 mΩ but larger footprint and 3× higher Coss (2000 pF) | Requires PCB redesign; better for >30 A continuous loads but unsuitable for thin-profile layouts | Select only if thermal budget exceeds 1.5 W and board area allows D²PAK mounting |
Compared with Si7852DP-T1-GE3 and IPB80N04S4-02, IRF7413GTRPBF offers optimal balance of low RDS(on), compact SO-8 form factor, and controlled Qrr - making it preferred for space-constrained, medium-current synchronous buck stages where thermal and layout constraints dominate.
Availability
IRF7413GTRPBF is available at Aetrix Electronics and suitable for notebook VRMs, tablet PMICs, USB-C PD sink converters, and industrial auxiliary SMPS requiring stable component supply and consistent parametric performance across production lots.
Supply support for IRF7413GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.
The StrongIRFET™ product line delivers high-current, low-RDS(on) MOSFETs for demanding power conversion applications - specifically engineered for efficiency-critical DC-DC stages in portable and industrial electronics.
FAQ
What is the maximum safe operating temperature for IRF7413GTRPBF?
The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation up to this limit when thermal design maintains TJ ≤ 150°C. Derating begins at 25°C ambient with linear reduction of 20 mW/°C above 25°C, based on RθJA = 50 °C/W. PCB copper area and airflow directly impact achievable power handling.
Can IRF7413GTRPBF be used in single-ended flyback topologies?
Yes - it functions reliably as the primary-side switch in non-isolated or auxiliary-winding referenced flyback converters with ≤24 V input. Its 30 V VDS rating supports clamp circuits limiting drain voltage spikes to <25 V. For main output rectification, its body diode is not rated for high-voltage reverse recovery and must be replaced with an external Schottky.
Does IRF7413GTRPBF support 4.5 V gate drive in battery-powered systems?
Yes - it delivers RDS(on) = 5.0 mΩ at VGS = 4.5 V and ID = 3.7 A, enabling use with 3.3 V or 5 V logic-level controllers. However, total gate charge rises to ~65 nC at 4.5 V, increasing switching loss versus 10 V drive; thermal validation is required for sustained 7.3 A operation at reduced VGS.
How does the dual-channel SO-8 configuration affect PCB layout?
The shared-source pinout (Pins 2, 4, 7) simplifies routing for synchronous buck layouts by minimizing source loop inductance. Drain pins (5, 8) connect directly to thermal pads, while gates (1, 6) require short, low-inductance traces to gate drivers. This configuration eliminates need for discrete paralleling and reduces layout complexity versus two separate SO-8 MOSFETs.
IRF7413GTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 79 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7413GTRPBF FAQ
1.How can I place an order for IRF7413GTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7413GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7413GTRPBF reliable?
The price and inventory of IRF7413GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7413GTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7413GTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7413GTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7413GTRPBF?
IRF7413GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7413GTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7413GTRPBF?
For technical support, including IRF7413GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7413GTRPBF requirements.
6.How does Aetrix verify that IRF7413GTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7413GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7413GTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7413GTRPBF?
All IRF7413GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7413GTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7413GTRPBF part is unused and in its original packaging.
Return procedure for IRF7413GTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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