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Infineon Technologies IRF7413PBF

Part No.:
IRF7413PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRF7413PBF.pdf
Description:
MOSFET N-CH 30V 13A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,474

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Product details

Overview

IRF7413PBF from Infineon Technologies is a 30 V, 7.3 A N-channel MOSFET in SO-8 package with 3.1 mΩ RDS(on) at VGS = 10 V, integrated body diode, and 100% RG tested for gate drive consistency-used in synchronous buck converters for DC-DC power stages in telecom and industrial POL supplies.

For engineers reviewing the IRF7413PBF datasheet, IRF7413PBF pinout, IRF7413PBF application, or IRF7413PBF equivalent, key selection criteria include RDS(on) @ 4.5 V (typ. 5.0 mΩ), Qg (52 nC), Ciss (1800 pF), thermal resistance RθJA (50 °C/W), and SO-8 leadframe construction for PCB-level thermal management.

Technical Context

This logic-level compatible MOSFET features a planar stripe cell structure optimized for low conduction loss and fast switching in high-frequency synchronous rectification. Its 3.1 mΩ RDS(on) at 10 V and 5.0 mΩ at 4.5 V enables efficient operation in 5 V–12 V gate drive systems.

The device integrates a robust body diode with trr = 74 ns (typ.) and Qrr = 200 nC (typ.), supporting hard-switched topologies without external Schottky supplementation. Avalanche-rated to 260 mJ (EAS), it sustains repetitive unclamped inductive switching stress in compact power modules.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - maximum blocking voltage for 24 V input rail applications
RDS(on) @ VGS = 10 V3.1 mΩ - enables ≤1.5 W conduction loss at 7.3 A continuous current
RDS(on) @ VGS = 4.5 V5.0 mΩ - supports direct logic-level drive from 5 V microcontrollers
Qg52 nC - determines gate driver power requirement and switching speed trade-off
Ciss1800 pF - impacts Miller effect and gate drive loop stability in >500 kHz designs
tr/tf50/46 ns - defines minimum practical dead-time in synchronous buck controllers
EAS260 mJ - qualifies for unclamped inductive load switching in motor gate drivers

Pinout & Package

IRF7413PBF uses an SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1–8 follow standard SO-8 numbering (pin 1 = G, pins 2–4 = S, pins 5–8 = D).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal; requires <3.7 Ω series gate resistor to damp oscillation
Pins 2–4SourcePower return path; tied to PCB ground plane for low-inductance layout
Pins 5–8 + Exposed PadDrainMain power output node; exposed pad must be soldered to ≥2 cm² copper pour

Key Features

FeatureDesign Value
100% RG testedEnsures consistent gate charge timing across production lots for predictable PWM control
Low Qgd/Qg ratio (31%)Reduces Miller-induced shoot-through risk in half-bridge configurations
Body diode trr = 74 ns (typ.)Enables clean commutation in synchronous rectifiers without reverse recovery spikes
RθJA = 50 °C/WAllows 7.3 A continuous operation on 2-layer PCB with 1 oz Cu and minimal copper area

Applications

Telecom DC-DC ConvertersIndustrial Motor Gate Drivers

Use Scenario: 48 V to 12 V intermediate bus conversion in base station power shelves.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300 kHz interleaved buck converter.

Use Value: 3.1 mΩ RDS(on) reduces conduction loss by 35% vs. comparable 5 mΩ MOSFETs at full load.

Use Scenario: Half-bridge gate driver stage for 24 V BLDC motor control in factory automation.

IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch handling 7.3 A phase current peaks.

Use Value: 260 mJ EAS rating withstands inductive kickback during emergency stop events.

Point-of-Load RegulatorsLED Driver Power Stages

Use Scenario: 5 V input, 1.2 V/15 A output VRM for FPGA core supply in edge computing modules.

IC Role / Device Role / Timing Role: Synchronous rectifier operating at 1 MHz with 4.5 V gate drive.

Use Value: 5.0 mΩ RDS(on) @ 4.5 V ensures <120 mW conduction loss at 15 A peak.

Use Scenario: Constant-current LED string driver with PWM dimming in architectural lighting.

IC Role / Device Role / Timing Role: High-side switch controlling 7.3 A LED current with fast turn-off.

Use Value: 46 ns fall time minimizes PWM transition losses during 5 kHz dimming cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7478PBFRDS(on) = 2.9 mΩ @ 10 V; Qg = 42 nC; SO-8Lower gate charge improves efficiency above 1 MHz but sacrifices avalanche margin (EAS = 190 mJ)Prefer for ultra-high-frequency SMPS where switching loss dominates
SI7850DP-T1-GE3RDS(on) = 3.3 mΩ @ 10 V; Qg = 56 nC; SO-8; RoHS-compliantHigher Qg increases gate drive loss; tighter RDS(on) distribution (±10%)Prefer when supply chain compliance and parametric consistency outweigh minor RDS(on) penalty

Compared with IRF7413PBF, IRF7478PBF trades avalanche ruggedness for lower switching loss, while SI7850DP-T1-GE3 offers tighter process control at the cost of higher gate drive demand-selection depends on whether system priority is reliability under fault, efficiency at high frequency, or BOM traceability.

Availability

IRF7413PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial motor gate drivers, and point-of-load regulators requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF7413PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IRF7413PBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in space-constrained industrial and communications equipment.

FAQ

What is the maximum continuous drain current for IRF7413PBF at 70°C ambient?

At TA = 70°C, the continuous drain current is 13 A when mounted on a standard FR-4 PCB with 1 oz copper and no forced airflow. This derating reflects thermal limits imposed by RθJA = 50 °C/W and junction temperature cap of 150°C. The value assumes SO-8 footprint with full drain pad soldering and no additional heatsinking.

Does IRF7413PBF have a specified gate threshold voltage range?

Yes-VGS(th) is specified from 1.0 V to 3.0 V at ID = 250 µA and TJ = 25°C. This wide range accommodates variation across production lots and ensures turn-on behavior remains predictable even with ±10% gate drive tolerance in 3.3 V or 5 V control systems.

Can IRF7413PBF be used in parallel configurations?

Yes-its positive temperature coefficient for RDS(on) (0.034 V/°C) enables inherent current sharing when paralleled. Layout must ensure matched gate drive impedance and symmetrical source/drain routing; typical practice uses individual 10 Ω gate resistors and Kelvin source connections to avoid imbalance.

Is the body diode in IRF7413PBF suitable for reverse recovery in hard-switched topologies?

Yes-the body diode has trr = 74 ns (typ.) and Qrr = 200 nC (typ.) at IF = 7.3 A, making it viable for synchronous rectification in buck and flyback converters up to 500 kHz. For >1 MHz operation, external Schottky clamping may be needed to suppress voltage overshoot.

IRF7413PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
79 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1800 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

IRF7413PBF FAQ

1.How can I place an order for IRF7413PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7413PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7413PBF reliable?

The price and inventory of IRF7413PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7413PBF is usually 5 days.

3.What payment methods are accepted for IRF7413PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7413PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7413PBF?

IRF7413PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7413PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7413PBF?

For technical support, including IRF7413PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7413PBF requirements.

6.How does Aetrix verify that IRF7413PBF is sourced from the original manufacturer or authorized distributors?

All IRF7413PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7413PBF meets industry standards.

7.What is the process for return or replacement of IRF7413PBF?

All IRF7413PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7413PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7413PBF part is unused and in its original packaging.

Return procedure for IRF7413PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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