Infineon Technologies IRF7413PBF
- Part No.:
- IRF7413PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7413PBF.pdf
- Description:
- MOSFET N-CH 30V 13A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:9,474
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7413PBF from Infineon Technologies is a 30 V, 7.3 A N-channel MOSFET in SO-8 package with 3.1 mΩ RDS(on) at VGS = 10 V, integrated body diode, and 100% RG tested for gate drive consistency-used in synchronous buck converters for DC-DC power stages in telecom and industrial POL supplies.
For engineers reviewing the IRF7413PBF datasheet, IRF7413PBF pinout, IRF7413PBF application, or IRF7413PBF equivalent, key selection criteria include RDS(on) @ 4.5 V (typ. 5.0 mΩ), Qg (52 nC), Ciss (1800 pF), thermal resistance RθJA (50 °C/W), and SO-8 leadframe construction for PCB-level thermal management.
Technical Context
This logic-level compatible MOSFET features a planar stripe cell structure optimized for low conduction loss and fast switching in high-frequency synchronous rectification. Its 3.1 mΩ RDS(on) at 10 V and 5.0 mΩ at 4.5 V enables efficient operation in 5 V–12 V gate drive systems.
The device integrates a robust body diode with trr = 74 ns (typ.) and Qrr = 200 nC (typ.), supporting hard-switched topologies without external Schottky supplementation. Avalanche-rated to 260 mJ (EAS), it sustains repetitive unclamped inductive switching stress in compact power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage for 24 V input rail applications |
| RDS(on) @ VGS = 10 V | 3.1 mΩ - enables ≤1.5 W conduction loss at 7.3 A continuous current |
| RDS(on) @ VGS = 4.5 V | 5.0 mΩ - supports direct logic-level drive from 5 V microcontrollers |
| Qg | 52 nC - determines gate driver power requirement and switching speed trade-off |
| Ciss | 1800 pF - impacts Miller effect and gate drive loop stability in >500 kHz designs |
| tr/tf | 50/46 ns - defines minimum practical dead-time in synchronous buck controllers |
| EAS | 260 mJ - qualifies for unclamped inductive load switching in motor gate drivers |
Pinout & Package
IRF7413PBF uses an SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1–8 follow standard SO-8 numbering (pin 1 = G, pins 2–4 = S, pins 5–8 = D).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; requires <3.7 Ω series gate resistor to damp oscillation |
| Pins 2–4 | Source | Power return path; tied to PCB ground plane for low-inductance layout |
| Pins 5–8 + Exposed Pad | Drain | Main power output node; exposed pad must be soldered to ≥2 cm² copper pour |
Key Features
| Feature | Design Value |
|---|---|
| 100% RG tested | Ensures consistent gate charge timing across production lots for predictable PWM control |
| Low Qgd/Qg ratio (31%) | Reduces Miller-induced shoot-through risk in half-bridge configurations |
| Body diode trr = 74 ns (typ.) | Enables clean commutation in synchronous rectifiers without reverse recovery spikes |
| RθJA = 50 °C/W | Allows 7.3 A continuous operation on 2-layer PCB with 1 oz Cu and minimal copper area |
Applications
| Telecom DC-DC Converters | Industrial Motor Gate Drivers |
|---|---|
Use Scenario: 48 V to 12 V intermediate bus conversion in base station power shelves. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300 kHz interleaved buck converter. Use Value: 3.1 mΩ RDS(on) reduces conduction loss by 35% vs. comparable 5 mΩ MOSFETs at full load. | Use Scenario: Half-bridge gate driver stage for 24 V BLDC motor control in factory automation. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch handling 7.3 A phase current peaks. Use Value: 260 mJ EAS rating withstands inductive kickback during emergency stop events. |
| Point-of-Load Regulators | LED Driver Power Stages |
Use Scenario: 5 V input, 1.2 V/15 A output VRM for FPGA core supply in edge computing modules. IC Role / Device Role / Timing Role: Synchronous rectifier operating at 1 MHz with 4.5 V gate drive. Use Value: 5.0 mΩ RDS(on) @ 4.5 V ensures <120 mW conduction loss at 15 A peak. | Use Scenario: Constant-current LED string driver with PWM dimming in architectural lighting. IC Role / Device Role / Timing Role: High-side switch controlling 7.3 A LED current with fast turn-off. Use Value: 46 ns fall time minimizes PWM transition losses during 5 kHz dimming cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7478PBF | RDS(on) = 2.9 mΩ @ 10 V; Qg = 42 nC; SO-8 | Lower gate charge improves efficiency above 1 MHz but sacrifices avalanche margin (EAS = 190 mJ) | Prefer for ultra-high-frequency SMPS where switching loss dominates |
| SI7850DP-T1-GE3 | RDS(on) = 3.3 mΩ @ 10 V; Qg = 56 nC; SO-8; RoHS-compliant | Higher Qg increases gate drive loss; tighter RDS(on) distribution (±10%) | Prefer when supply chain compliance and parametric consistency outweigh minor RDS(on) penalty |
Compared with IRF7413PBF, IRF7478PBF trades avalanche ruggedness for lower switching loss, while SI7850DP-T1-GE3 offers tighter process control at the cost of higher gate drive demand-selection depends on whether system priority is reliability under fault, efficiency at high frequency, or BOM traceability.
Availability
IRF7413PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial motor gate drivers, and point-of-load regulators requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF7413PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
IRF7413PBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in space-constrained industrial and communications equipment.
FAQ
What is the maximum continuous drain current for IRF7413PBF at 70°C ambient?
At TA = 70°C, the continuous drain current is 13 A when mounted on a standard FR-4 PCB with 1 oz copper and no forced airflow. This derating reflects thermal limits imposed by RθJA = 50 °C/W and junction temperature cap of 150°C. The value assumes SO-8 footprint with full drain pad soldering and no additional heatsinking.
Does IRF7413PBF have a specified gate threshold voltage range?
Yes-VGS(th) is specified from 1.0 V to 3.0 V at ID = 250 µA and TJ = 25°C. This wide range accommodates variation across production lots and ensures turn-on behavior remains predictable even with ±10% gate drive tolerance in 3.3 V or 5 V control systems.
Can IRF7413PBF be used in parallel configurations?
Yes-its positive temperature coefficient for RDS(on) (0.034 V/°C) enables inherent current sharing when paralleled. Layout must ensure matched gate drive impedance and symmetrical source/drain routing; typical practice uses individual 10 Ω gate resistors and Kelvin source connections to avoid imbalance.
Is the body diode in IRF7413PBF suitable for reverse recovery in hard-switched topologies?
Yes-the body diode has trr = 74 ns (typ.) and Qrr = 200 nC (typ.) at IF = 7.3 A, making it viable for synchronous rectification in buck and flyback converters up to 500 kHz. For >1 MHz operation, external Schottky clamping may be needed to suppress voltage overshoot.
IRF7413PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 79 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7413PBF FAQ
1.How can I place an order for IRF7413PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7413PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7413PBF reliable?
The price and inventory of IRF7413PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7413PBF is usually 5 days.
3.What payment methods are accepted for IRF7413PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7413PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7413PBF?
IRF7413PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7413PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7413PBF?
For technical support, including IRF7413PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7413PBF requirements.
6.How does Aetrix verify that IRF7413PBF is sourced from the original manufacturer or authorized distributors?
All IRF7413PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7413PBF meets industry standards.
7.What is the process for return or replacement of IRF7413PBF?
All IRF7413PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7413PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7413PBF part is unused and in its original packaging.
Return procedure for IRF7413PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7413PBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

