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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7413QTRPBF

Name: IRF7413QTRPBF
Brand: Infineon Technologies
SKU: IRF7413QTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7413QTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7413QTRPBF.pdf

Description:: MOSFET N-CH 30V 13A 8-SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7413QTRPBF from Infineon (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in SO-8 package, rated for 30 V V_DS, 7.3 A continuous drain current at 10 V V_GS, and 2.5 mΩ typical R_DS(on) at V_GS = 10 V. It features a 150°C junction temperature rating, fast switching (t_r = 50 ns), and integrated body diode with 74–110 ns reverse recovery time - used in synchronous buck converters, load switches, and DC-DC power stages.

For engineers reviewing the IRF7413QTRPBF datasheet, IRF7413QTRPBF pinout, IRF7413QTRPBF application, or IRF7413QTRPBF equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V gate drive, SO-8 thermal performance (R_θJA = 50°C/W), avalanche energy rating (E_AS = 58 mJ), and body diode Q_rr (200–300 nC) for hard-switched topologies.

Technical Context

This MOSFET employs HEXFET® advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (1.0–3.0 V) enables compatibility with 3.3 V and 5 V logic-level drivers, and its low C_iss (1800 pF) and C_rss (240 pF) support high-frequency operation up to several hundred kHz.

The device integrates a planar vertical DMOS structure with optimized charge balance, delivering stable R_DS(on) over temperature (normalized to 1.0 at 25°C, ~1.5 at 150°C). Its SO-8 package provides dual-sided thermal conduction via exposed drain pads (pins 1–3, 5–8), enabling PCB copper pour heat spreading without requiring a heatsink in moderate-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage in high-side or low-side switch configurations
R_DS(on) @ V_GS = 10 V	2.5 mΩ typ - Enables <1 W conduction loss at 7.3 A, critical for 12 V input buck regulators
R_DS(on) @ V_GS = 4.5 V	4.0 mΩ max - Ensures reliable turn-on with 3.3 V microcontroller GPIO or PWM drivers
I_D continuous @ T_A = 25°C	9.2 A - Sustained current capability with adequate PCB copper cooling
E_AS	58 mJ - Energy-handling capacity during unclamped inductive switching events
Q_g	52 nC typ - Gate drive charge determining driver IC sizing and switching loss trade-off
t_r/t_f	50/46 ns - Fast edge rates supporting >500 kHz switching without excessive EMI
T_J max	150°C - Extended thermal margin for sealed enclosures or high ambient environments

Pinout & Package

IRF7413QTRPBF uses the JEDEC MS-012AA-compliant SO-8 surface-mount package with exposed drain leads (pins 1–3 and 5–8) for enhanced thermal conduction. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Drain (D)	Common high-current output node; electrically and thermally connected to internal die backside - must be tied to ground plane or heatsink pad
4	Gate (G)	Control terminal; requires low-impedance drive path to minimize ringing and switching losses
Source (S)	Source (S)	Reference node for gate drive and current sensing; pins are internally bonded but not externally accessible as discrete terminals - source connection made via PCB trace from pin 4 vicinity

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.5 mΩ @ 10 V - Reduces conduction loss by >40% vs. legacy SO-8 MOSFETs in 12 V systems
Logic-level gate drive	V_GS(th) = 1.0–3.0 V - Direct interface with 3.3 V MCU outputs without level-shifting circuitry
Enhanced avalanche ruggedness	E_AS = 58 mJ - Withstands repetitive inductive kickback in motor drives and solenoid controls
Fast body diode recovery	Q_rr = 200–300 nC - Minimizes reverse recovery loss in synchronous rectification and bidirectional power flow
Lead-free and RoHS compliant	Pb-free plating per JEDEC J-STD-609 - Meets global environmental compliance requirements for industrial and consumer products

Applications

Motor Drive H-Bridge

USB-C Power Delivery Switch

Use Scenario: Bidirectional 12 V brushed DC motor control in robotics and actuation modules.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in half-bridge configuration with complementary gate timing.

Use Value: Low R_DS(on) minimizes I²R heating during stall conditions; fast t_r/t_f enables precise PWM duty cycle control below 1 μs resolution.

Use Scenario: Input power path management in portable USB-C PD sink devices with 5–20 V input range.

IC Role / Device Role / Timing Role: Load switch controlling VBUS connection between connector and system rail, with controlled inrush and fault isolation.

Use Value: 4.5 V gate compatibility ensures clean turn-on from USB PD controller's 3.3 V GPIO; low Q_g enables fast enable/disable response (<100 μs).

Server VRM High-Side Switch

Industrial PLC Output Module

Use Scenario: High-efficiency 12 V → 1.2 V point-of-load conversion in datacenter server voltage regulator modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, operating at 300–600 kHz with interleaved phases.

Use Value: Low C_oss (680 pF) and Crss (240 pF) reduce switching loss and cross-conduction risk; SO-8 thermal design supports >5 A per phase without forced air.

Use Scenario: Solid-state replacement for electromechanical relays in 24 V DC digital output modules for factory automation.

IC Role / Device Role / Timing Role: Protected high-side switch driving solenoids, indicators, and small actuators with diagnostic feedback.

Use Value: 150°C T_J rating ensures reliability in enclosed DIN-rail enclosures; integrated body diode handles inductive flyback without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2302DS-T1-GE3	R_DS(on) = 45 mΩ @ 4.5 V; SO-23 package; lower current (3.2 A)	Targeted at space-constrained low-power loads (e.g., LED bias, sensor power gating)	Select when board area is critical and current < 4 A; avoid for power conversion above 5 W
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V; same SO-8 footprint; higher Q_g (62 nC)	Optimized for high-frequency ZVS/ZCS topologies where gate drive loss dominates	Prefer when operating >1 MHz or using resonant gate drivers; verify thermal derating at full load

Compared with Si2302DS-T1-GE3, IRF7413QTRPBF delivers >15× lower R_DS(on) and 2.3× higher current, making it suitable for medium-power switching; versus DMN3025LSD-13, it offers 16% lower Q_g and tighter V_GS(th) distribution, improving gate drive efficiency and turn-on consistency across temperature.

Availability

IRF7413QTRPBF is available at Aetrix Electronics and suitable for motor drives, USB-C power delivery systems, server VRMs, and industrial PLC output modules requiring stable component supply, long-term manufacturability, and RoHS-compliant sourcing.

Supply support for IRF7413QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The IRF7413QTRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered for high-efficiency, high-density DC-DC conversion and solid-state power switching in space- and thermally-constrained applications.

FAQ

What is the maximum safe operating voltage for IRF7413QTRPBF in continuous DC blocking?

The absolute maximum V_DS rating is 30 V. Operation beyond this value risks irreversible avalanche breakdown, even with short pulses. For reliable long-term use, design margins should limit steady-state V_DS to ≤24 V, and transient spikes (e.g., inductive kick) must stay within the 58 mJ single-pulse avalanche energy limit verified at T_J = 25°C.

Can IRF7413QTRPBF be driven directly from a 3.3 V microcontroller GPIO without a gate driver?

Yes - its V_GS(th) range (1.0–3.0 V) ensures turn-on at 3.3 V, and R_DS(on) remains ≤4.0 mΩ at V_GS = 4.5 V. However, for >1 A loads or switching frequencies >100 kHz, a dedicated gate driver is recommended to overcome Q_g = 52 nC and minimize Miller-induced shoot-through in bridge configurations.

How does the SO-8 package of IRF7413QTRPBF manage heat in high-current operation?

The SO-8 package uses pins 1–3 and 5–8 as exposed drain terminals, enabling direct thermal coupling to large PCB copper areas. With R_θJA = 50°C/W on 1-in² 2-oz copper, it sustains 7.3 A continuous current at T_A = 70°C. For higher currents, connecting the drain pads to an internal ground plane layer reduces R_θJA to ~35°C/W.

Is IRF7413QTRPBF suitable for synchronous rectification in a 48 V to 12 V buck converter?

No - its 30 V V_DS rating is insufficient for 48 V input applications, where reflected transients and overshoot can exceed 40 V. Use instead a 60 V or 80 V rated MOSFET such as IPB120N04S4-02 (40 V) or IRLU3110Z (100 V), both with comparable R_DS(on) and SO-8 packaging.

IRF7413QTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 11mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7413QTRPBF FAQ

1.How can I place an order for IRF7413QTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7413QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7413QTRPBF reliable?

The price and inventory of IRF7413QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7413QTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7413QTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7413QTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7413QTRPBF?

IRF7413QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7413QTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7413QTRPBF?

For technical support, including IRF7413QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7413QTRPBF requirements.

6.How does Aetrix verify that IRF7413QTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7413QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7413QTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7413QTRPBF?

All IRF7413QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7413QTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7413QTRPBF part is unused and in its original packaging.

Return procedure for IRF7413QTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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