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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7413TRPBF

Name: IRF7413TRPBF
Brand: Infineon Technologies
SKU: IRF7413TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7413TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7413TRPBF.pdf

Description:: MOSFET N-CH 30V 13A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7413TRPBF from Infineon Technologies is a 30 V, 7.3 A N-channel MOSFET in SO-8 package with R_DS(on) = 3.1 mΩ @ V_GS = 10 V and 5.0 mΩ @ V_GS = 4.5 V, featuring integrated body diode and optimized for high-efficiency DC-DC synchronous buck converters in server VRMs and point-of-load applications.

For engineers reviewing the IRF7413TRPBF datasheet, IRF7413TRPBF pinout, IRF7413TRPBF application, or IRF7413TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 100% R_G tested gate resistance, SO-8 thermal performance (R_θJA = 50 °C/W), and avalanche-rated operation (E_AS = 58 mJ).

Technical Context

This logic-level MOSFET supports dual-source configuration in synchronous rectification stages, with gate threshold voltage (V_GS(th)) ranging 1.0–3.0 V and forward transconductance (g_fs) of 10–25 S. Its 1800 pF input capacitance and 240 pF reverse transfer capacitance enable stable switching at up to 1 MHz in high-frequency power supplies.

The device integrates a fast-recovery body diode (t_rr = 74–110 ns, Q_rr = 200–300 nC) and exhibits positive temperature coefficient for R_DS(on), supporting parallel operation. Junction-to-ambient thermal resistance is rated at 50 °C/W, and junction-to-drain lead resistance is 20 °C/W for PCB copper thermal spreading.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input bus systems with margin
R_DS(on) @ 10 V	3.1 mΩ - Enables <1 W conduction loss at 7.3 A in continuous operation
R_DS(on) @ 4.5 V	5.0 mΩ - Supports direct logic-level drive from 5 V controllers without gate boost
Q_g	52–79 nC - Determines gate driver current requirement for 100–500 kHz switching
t_r/t_f	50/46 ns - Limits switching losses and EMI in hard-switched topologies
E_AS	58 mJ - Withstands single-pulse inductive energy during load dump or fault events
T_J Range	−55 to +150 °C - Qualified for industrial and telecom power supply environments

Pinout & Package

IRF7413TRPBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1 is gate (G), pins 2–4 and 5–7 are source (S) terminals (dual-source configuration), and pin 8 is drain (D). The package supports JEDEC MS-012AC outline and RoHS-compliant reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤3.7 Ω gate resistance to limit ringing and ensure clean turn-on
2, 3, 4	Source	Common source node for low-side switch; paralleled to reduce package inductance and R_DS(on)
5, 6, 7	Source	Secondary source connection; enables Kelvin sensing or split-current routing in high-precision designs
8	Drain	Main power output node; tied to exposed pad for thermal path to PCB ground plane

Key Features

Feature	Design Value
100% R_G tested	Ensures gate resistance ≤3.7 Ω across production lot, critical for consistent switching timing
Low Q_gd/Q_gs ratio	16–23 nC / 6.1–9.2 nC - Reduces Miller-induced shoot-through risk in synchronous buck stages
Fast body diode recovery	t_rr = 74–110 ns, Q_rr = 200–300 nC - Minimizes reverse recovery loss in non-overlap dead-time operation
Thermally enhanced SO-8	R_θJL = 20 °C/W - Enables >3 W power dissipation with 1-in² 2-oz copper pad under drain tab

Applications

Server VRM Output Stage

Industrial PLC Power Module

Use Scenario: High-current, high-frequency synchronous rectification in 12 V → 1.2 V server CPU VRMs.

IC Role / Device Role: Low-side MOSFET in dual-phase interleaved buck converter with 300–500 kHz switching.

Use Value: 5.0 mΩ R_DS(on) @ 4.5 V enables direct drive from digital PWM controller, reducing BOM count and layout complexity.

Use Scenario: Isolated DC-DC bias supply for I/O modules in programmable logic controllers.

IC Role / Device Role: Primary-side synchronous rectifier in active-clamp forward topology operating at 200 kHz.

Use Value: 58 mJ avalanche rating ensures robustness against transformer leakage inductance spikes during transient overloads.

Telecom Base Station PSU

Automotive ADAS Camera Power

Use Scenario: Point-of-load regulator supplying FPGAs and DSPs in 48 V telecom rectifiers.

IC Role / Device Role: Secondary-side switch in half-bridge LLC resonant converter with synchronous rectification.

Use Value: 1800 pF C_iss and 240 pF C_rss support zero-voltage switching (ZVS) down to 50% load with minimal control loop compensation.

Use Scenario: Compact 5 V/3 A power rail for image sensor and ISP in automotive surround-view cameras.

IC Role / Device Role: High-side load switch with integrated reverse polarity protection and soft-start.

Use Value: −55 to +150 °C junction range meets AEC-Q101 stress test requirements for under-hood camera modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7478PBF	R_DS(on) = 4.0 mΩ @ 10 V; higher Q_g (91 nC); no 100% R_G test	Optimized for lower-cost, lower-frequency (<200 kHz) industrial SMPS	Select when gate drive strength exceeds 1 A and thermal margin allows higher R_DS(on)
Si7852DP-T1-GE3	R_DS(on) = 4.2 mΩ @ 4.5 V; SO-8 but with different pinout (G-S-D-S-S-S-S-D); no avalanche rating	Targeted at consumer-grade notebook VRMs where E_AS not required	Use only with verified PCB layout adaptation; avoid in automotive or telecom due to missing E_AS

Compared with IRF7413TRPBF, IRF7478PBF trades lower cost for reduced efficiency and less gate drive control assurance, while Si7852DP-T1-GE3 offers comparable low-V_GS R_DS(on) but lacks avalanche ruggedness and requires pinout redesign-making IRF7413TRPBF preferred for mission-critical power stages.

Availability

IRF7413TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power modules, and telecom base station PSUs requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for IRF7413TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The StrongIRFET™ product line, which includes IRF7413TRPBF, is engineered for high-current, high-efficiency power conversion in datacenter, telecom, and industrial infrastructure-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for IRF7413TRPBF at 70°C ambient?

The maximum continuous drain current is 13 A at T_A = 70°C with V_GS = 10 V, assuming SO-8 mounting on a standard 1-in² 2-oz copper PCB per JEDEC JESD51-7. Derating begins above 25°C at 9.2 mW/°C, and actual current capability depends on heatsinking and airflow.

Does IRF7413TRPBF have an integrated Schottky diode?

No. IRF7413TRPBF incorporates a monolithic body diode formed by the MOSFET's inherent p-n junction-not a discrete Schottky. Its reverse recovery time (74–110 ns) and charge (200–300 nC) are specified for this parasitic diode, and it is not optimized for ultra-fast or low-V_F applications like dedicated Schottky rectifiers.

Can IRF7413TRPBF be used in a high-side switch configuration?

Yes, but only with appropriate gate drive circuitry capable of providing V_GS ≥ 10 V referenced to the source terminal. Since its maximum V_GS rating is ±20 V and V_DS is 30 V, it supports high-side operation in buck-derived topologies where bootstrap or isolated gate drivers are used-provided dV/dt stress remains below 50 V/ns.

Is IRF7413TRPBF compliant with lead-free and RoHS requirements?

Yes. IRF7413TRPBF is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The SO-8 package uses matte tin plating and supports standard Pb-free reflow profiles up to 260°C peak temperature for 10 seconds.

IRF7413TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7413TRPBF FAQ

1.How can I place an order for IRF7413TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7413TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7413TRPBF reliable?

The price and inventory of IRF7413TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7413TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7413TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7413TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7413TRPBF?

IRF7413TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7413TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7413TRPBF?

For technical support, including IRF7413TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7413TRPBF requirements.

6.How does Aetrix verify that IRF7413TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7413TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7413TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7413TRPBF?

All IRF7413TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7413TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7413TRPBF part is unused and in its original packaging.

Return procedure for IRF7413TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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