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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7413TRPBF-1

Name: IRF7413TRPBF-1
Brand: Infineon Technologies
SKU: IRF7413TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7413TRPBF-1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7413TRPBF-1.pdf

Description:: MOSFET N-CH 30V 13A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7413TRPBF-1 from Infineon Technologies is a 30 V, 13 A N-channel Trench MOSFET in SO-8 package, optimized for high-efficiency synchronous buck converters and load switches in DC-DC power stages. It features R_DS(on) = 11 mΩ @ V_GS = 10 V, Q_g = 52 nC (typ), and integrated body diode with t_rr = 74 ns (typ), enabling fast switching in 12 V input industrial and telecom POL applications.

For engineers reviewing the IRF7413TRPBF-1 datasheet, IRF7413TRPBF-1 pinout, IRF7413TRPBF-1 application, or IRF7413TRPBF-1 equivalent, key selection criteria include verified R_DS(on) at 4.5 V and 10 V, gate charge profile for PWM driver sizing, SO-8 thermal resistance (R_θJA = 50 °C/W), and avalanche energy rating (E_AS = 260 mJ).

Technical Context

This device uses Infineon's TrenchMOS technology to achieve low conduction loss and controlled switching behavior. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) supports both 5 V and 10 V gate drive, while the Miller charge (Q_gd = 16 nC typ) and input capacitance (C_iss = 1800 pF) define its hard-switching speed and EMI profile in high-frequency converters.

The integrated body diode exhibits V_SD ≤ 1.0 V at 7.3 A and reverse recovery charge Q_rr = 200–300 nC, making it suitable for synchronous rectification where diode conduction occurs during dead-time. Thermal design relies on SO-8's R_θJL = 20 °C/W to drain lead for PCB copper-assisted cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input bus designs with margin against transients
R_DS(on) @ V_GS = 10 V	11 mΩ - Enables ≤1.5 W conduction loss at 13 A continuous current in TO-252-equivalent thermal footprint
Q_g	52 nC (typ) - Determines gate driver current requirement (~1.04 A peak for 50 ns rise time)
t_r/t_f	50/46 ns - Supports >500 kHz switching in non-isolated buck regulators without excessive switching loss
E_AS	260 mJ - Withstands single-pulse inductive energy in motor gate-drive or hot-swap fault conditions
T_J range	−55 to +150 °C - Qualified for industrial ambient operation up to 125 °C case temperature
C_iss/C_oss	1800 / 680 pF - Defines Miller effect and output impedance for snubberless layout in 48 V intermediate bus converters

Pinout & Package

IRF7413TRPBF-1 is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for thermal and electrical connection to PCB ground plane. Pin 5 is gate, and pins 2–3 are source terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Common high-side switch node; all connected internally; requires low-inductance PCB copper pour for heat dissipation and EMI control
5	Gate (G)	Control terminal; driven by external PWM signal; sensitive to ringing due to C_iss = 1800 pF and Q_gd = 16 nC
2, 3	Source (S)	Power return path for channel current; dual-source pins reduce source inductance in high-di/dt synchronous rectifiers

Key Features

Feature	Design Value
Industry-standard SO-8 footprint	Enables drop-in replacement across multiple vendors without PCB redesign
R_DS(on) = 11 mΩ @ 10 V	Reduces conduction loss by ≥35% vs. legacy 20 mΩ MOSFETs in 12 V/10 A point-of-load rails
Q_gd/Q_g ratio = 0.31	Improves switching robustness against shoot-through in half-bridge configurations
MSL1 rating, RoHS/halogen-free	Supports lead-free reflow (260 °C peak) and long-term reliability in industrial environments
Body diode t_rr = 74 ns	Minimizes reverse recovery loss during synchronous rectification in 300–600 kHz converters

Applications

Server VRM Power Stage

Industrial PLC I/O Module

Use Scenario: High-current CPU core voltage regulation using multiphase buck topology with 12 V input.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500–800 kHz with 100 ns dead-time control.

Use Value: 11 mΩ R_DS(on) limits conduction loss to <1.2 W at 13 A, reducing heatsink size by 40% vs. 18 mΩ alternatives.

Use Scenario: Isolated digital output driver stage delivering 2 A per channel to 24 V solenoids.

IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (t_f = 46 ns) to prevent inductive kickback damage.

Use Value: 260 mJ E_AS rating absorbs stored inductor energy during abrupt current interruption.

Telecom DC-DC Converter

Automotive Body Control Module

Use Scenario: 48 V to 12 V intermediate bus converter in base station power supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology.

Use Value: 74 ns t_rr and 200 nC Q_rr minimize body diode conduction loss during dead-time, improving efficiency by 1.2% at full load.

Use Scenario: LED headlight dimming circuit with PWM-controlled current sink.

IC Role / Device Role / Timing Role: Low-side current control switch handling 5 A pulsed loads at 100–500 Hz.

Use Value: −55 to +150 °C junction rating ensures stable R_DS(on) performance across under-hood temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7478PBF	R_DS(on) = 9.5 mΩ @ 10 V; Q_g = 65 nC; SO-8	Lower R_DS(on) but higher gate charge increases driver loss at >1 MHz	Prefer for fixed-frequency 300–500 kHz designs where conduction loss dominates
SiR872DP-T1-GE3	R_DS(on) = 10.5 mΩ @ 10 V; Q_g = 45 nC; SO-8; trench Schottky body diode	Lower Q_rr (120 nC) improves light-load efficiency in DCM mode	Prefer for variable-frequency or burst-mode DC-DC where diode recovery dominates loss

Compared with IRF7478PBF and SiR872DP-T1-GE3, IRF7413TRPBF-1 offers balanced Q_g/R_DS(on) trade-off and proven ruggedness in industrial motor drives, making it optimal for cost-sensitive 500 kHz–1 MHz buck converters requiring field-proven avalanche capability.

Availability

IRF7413TRPBF-1 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC I/O modules, and telecom DC-DC converters requiring stable component supply and long-lifecycle support.

Supply support for IRF7413TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This MOSFET belongs to Infineon's StrongIRFET™ family, engineered for high-current, high-efficiency DC-DC conversion in enterprise and infrastructure power systems.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7413TRPBF-1 supports 13 A continuous drain current at T_A = 25°C with V_GS = 10 V. At T_A = 70°C, derating applies: based on R_θJA = 50 °C/W and T_J(max) = 150°C, the practical limit is 9.2 A with adequate PCB copper area.

Does this MOSFET require a gate resistor for stability?

Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by Q_gd = 16 nC and C_iss = 1800 pF interacting with PCB trace inductance. Values below 3 Ω risk oscillation; above 22 Ω excessively slows switching and increases loss.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the integral body diode has t_rr = 74 ns (typ) and Q_rr = 200 nC (typ) at I_F = 7.3 A, enabling reliable synchronous rectification in buck converters up to 600 kHz when paired with proper dead-time control.

Can IRF7413TRPBF-1 be used in linear regulator mode?

No - it is not characterized for linear (saturation) operation. The Safe Operating Area (SOA) curve shows limited DC capability beyond 1 ms pulses; sustained linear use risks thermal runaway due to positive R_DS(on) temperature coefficient and insufficient SOA margin.

IRF7413TRPBF-1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7413TRPBF-1 FAQ

1.How can I place an order for IRF7413TRPBF-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7413TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7413TRPBF-1 reliable?

The price and inventory of IRF7413TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7413TRPBF-1 is usually 5 days.

3.What payment methods are accepted for IRF7413TRPBF-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7413TRPBF-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7413TRPBF-1?

IRF7413TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7413TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7413TRPBF-1?

For technical support, including IRF7413TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7413TRPBF-1 requirements.

6.How does Aetrix verify that IRF7413TRPBF-1 is sourced from the original manufacturer or authorized distributors?

All IRF7413TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7413TRPBF-1 meets industry standards.

7.What is the process for return or replacement of IRF7413TRPBF-1?

All IRF7413TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7413TRPBF-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7413TRPBF-1 part is unused and in its original packaging.

Return procedure for IRF7413TRPBF-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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