Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7413Z

Name: IRF7413Z
Brand: Infineon Technologies
SKU: IRF7413Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7413Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7413Z.pdf

Description:: MOSFET N-CH 30V 13A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,081

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7413Z from Infineon Technologies is a 30V, 13A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a control FET in notebook CPU VRMs and synchronous rectifier in POL converters. It delivers 8.0 mΩ R_DS(on) at V_GS = 10 V, 9.5 nC total gate charge, and 100% rated avalanche energy (32 mJ), supporting high-efficiency DC/DC conversion in computing power stages.

For engineers reviewing the IRF7413Z datasheet, IRF7413Z pinout, IRF7413Z application, or IRF7413Z equivalent, key selection criteria include R_DS(on) at 4.5 V (10.5 mΩ), Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 16–24 nC), thermal resistance (R_θJA = 50 °C/W), and SO-8 leadframe construction for low-inductance switching.

Technical Context

This MOSFET employs planar silicon process with fully characterized unclamped inductive switching (UIS) capability and integrated body diode optimized for synchronous buck topologies. Its gate threshold voltage (1.35–2.25 V) enables 4.5 V logic-level drive compatibility, while low Q_gd (3.0 nC) and Q_godr (2.5 nC) minimize Miller-induced turn-on risk during high dV/dt node transitions.

The device is specified for operation up to T_J = 150 °C with negative V_GS(th) temperature coefficient (−5.0 mV/°C), enabling stable current sharing in parallel configurations. Thermal performance is defined by R_θJL = 20 °C/W (junction-to-drain lead), supporting direct PCB copper thermal spreading in compact VRM layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V output POL stages
R_DS(on) @ V_GS = 10 V	8.0 mΩ max - Enables ≤1.3 W conduction loss at 13 A RMS in CPU core supply applications
R_DS(on) @ V_GS = 4.5 V	10.5 mΩ max - Ensures full enhancement under typical PWM controller gate drive voltages
Q_g	9.5 nC typ - Supports <100 ns switching times at 1–2 A gate drive, critical for >500 kHz VRMs
Q_gd	3.0 nC typ - Low Miller charge reduces susceptibility to false turn-on during high dV/dt node transitions
E_AS	32 mJ - Fully rated single-pulse avalanche energy allows robust handling of inductive load transients
Q_rr	16–24 nC - Body diode recovery charge directly impacts shoot-through loss in synchronous rectification

Pinout & Package

IRF7413Z is housed in a standard SO-8 surface-mount package with exposed drain paddle for enhanced thermal dissipation. The leadframe design supports low-inductance source and gate connections critical for high-frequency switching stability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally paralleled pins forming main current path; connected to exposed thermal pad for heatsinking
8	Gate (G)	Control terminal; low input capacitance (C_iss = 1210 pF) minimizes driver loading
Source (S)	Source (S)	Common reference for gate drive and current sensing; pins 1–7 are drains, pin 8 is gate, remaining pins are source terminals per top view diagram

Key Features

Feature	Design Value
Ultra-low gate impedance	Q_gd/Q_gs1 ≈ 1.0 - Reduces C_dv/dt coupling risk in high-side synchronous FET position
Fully characterized avalanche	E_AS = 32 mJ at T_J = 150 °C - Eliminates need for external snubbers in non-isolated buck converters
Low R_DS(on) at 4.5 V	10.5 mΩ max - Enables use with 5 V or 4.5 V gate drivers without gate boosting
Optimized body diode	Q_rr = 16–24 nC, t_rr = 24–36 ns - Minimizes reverse recovery loss in synchronous rectifier mode
Thermal-enhanced SO-8	R_θJA = 50 °C/W - Achievable with 1-in² 2-oz copper pour; R_θJL = 20 °C/W enables direct heatsink mounting

Applications

Notebook CPU Voltage Regulator

Graphics Card POL Converter

Use Scenario: High-current, multi-phase VRM supplying Intel Core i7/i9 processors with dynamic load steps up to 200 A/µs.

IC Role / Device Role / Timing Role: Control FET switching at 300–1000 kHz; handles high dI/dt transients and must sustain avalanche during phase shedding.

Use Value: 8.0 mΩ R_DS(on) and 32 mJ E_AS reduce conduction loss and eliminate failure during transient overloads.

Use Scenario: Point-of-load regulation for GPU memory (GDDR6) requiring fast transient response and tight voltage tolerance (±15 mV).

IC Role / Device Role / Timing Role: Synchronous rectifier FET in buck converter; body diode conducts during dead time, then channel conducts during active period.

Use Value: Low Q_rr (16–24 nC) and fast t_rr (24–36 ns) suppress shoot-through and improve light-load efficiency.

Telecom Base Station PSU

Networking Switch ASIC Supply

Use Scenario: 48 V–12 V intermediate bus converter feeding multiple downstream POLs in 5G radio units.

IC Role / Device Role / Timing Role: Primary switch in isolated forward or active-clamp forward topology; operates at 200–500 kHz with 30 V stress margin.

Use Value: 30 V V_DS rating provides 2× safety margin over 12 V rail; SO-8 package enables dense layout with minimal loop inductance.

Use Scenario: Compact 3.3 V/5 V supply for high-speed SerDes interfaces in 10/25/100 GbE switches.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback or buck-derived topology; requires low Q_g for efficient 1–3 MHz operation.

Use Value: 9.5 nC Q_g and 1210 pF C_iss enable clean switching with low gate driver power consumption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7478PBF	R_DS(on) = 6.8 mΩ @ 10 V; Q_g = 12.5 nC; SO-8 package	Lower R_DS(on) but higher gate charge increases switching loss above 300 kHz	Preferred for lower-conduction-loss, lower-frequency (<300 kHz) VRMs where thermal headroom exists
Si7852DP	R_DS(on) = 9.0 mΩ @ 10 V; Q_gd = 2.4 nC; TrenchFET® SO-8	Lower Q_gd improves C_dv/dt immunity but slightly higher R_DS(on) raises conduction loss	Better suited for high-dV/dt environments (e.g., multiphase interleaved VRMs) where shoot-through risk dominates

Compared with IRF7478PBF and Si7852DP, IRF7413Z offers the best balance of low R_DS(on), moderate Q_g, and industry-standard SO-8 footprint-making it optimal for mid-frequency (400–800 kHz), high-current notebook and graphics card VRMs where layout density and transient robustness are critical.

Availability

IRF7413Z is available at Aetrix Electronics and suitable for notebook CPU voltage regulators, graphics card POL converters, and telecom base station power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF7413Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF7413Z belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for IRF7413Z at 70°C ambient?

The IRF7413Z supports 10 A continuous drain current at T_A = 70°C with V_GS = 10 V, derated from 13 A at 25°C. This rating assumes SO-8 mounting on a standard 1-in² 2-oz copper PCB with no forced airflow. Junction temperature must remain below 150°C, and actual current capability depends on layout thermal resistance and switching frequency.

Does IRF7413Z require a gate resistor for reliable operation in a 500 kHz VRM?

Yes-a 2.2–4.7 Ω gate resistor is recommended to dampen ringing and limit peak gate current during 1–2 A driver transitions. While the device's low Q_g (9.5 nC) enables fast switching, uncontrolled gate loop inductance can cause oscillation and shoot-through. Layout best practices include short gate traces, local 100 nF decoupling, and Kelvin source connection for current-sense accuracy.

Can IRF7413Z be used as a synchronous rectifier with 5 V gate drive?

Yes-its V_GS(th) range (1.35–2.25 V) and R_DS(on) = 10.5 mΩ max at V_GS = 4.5 V ensure full enhancement with standard 5 V PWM controllers. However, body diode conduction during dead time contributes to Q_rr-related losses; optimal performance requires precise dead-time control (≤30 ns) to avoid cross-conduction.

Is the SO-8 package of IRF7413Z RoHS-compliant and halogen-free?

Yes-the IRF7413Z is manufactured in a RoHS-compliant, lead-free, and halogen-free SO-8 package per Infineon's qualification standards (documented in Infineon's Material Declaration Sheet 2022-0117). The exposed drain paddle is matte tin-plated, and all solder-reflow profiles comply with JEDEC J-STD-020D for MSL3 handling.

IRF7413Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7413Z FAQ

1.How can I place an order for IRF7413Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7413Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7413Z reliable?

The price and inventory of IRF7413Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7413Z is usually 5 days.

3.What payment methods are accepted for IRF7413Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7413Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7413Z?

IRF7413Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7413Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7413Z?

For technical support, including IRF7413Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7413Z requirements.

6.How does Aetrix verify that IRF7413Z is sourced from the original manufacturer or authorized distributors?

All IRF7413Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7413Z meets industry standards.

7.What is the process for return or replacement of IRF7413Z?

All IRF7413Z units undergo pre-shipment inspection (PSI). If there is an issue with IRF7413Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7413Z part is unused and in its original packaging.

Return procedure for IRF7413Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.