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Infineon Technologies IRF7413ZGTRPBF
- Part No.:
- IRF7413ZGTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7413ZGTRPBF.pdf
- Description:
- MOSFET N-CH 30V 13A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,066
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Product details
Overview
IRF7413ZGTRPBF from Infineon Technologies is a 30 V, 13 A, N-channel dual SO-8 Power MOSFET optimized as a control FET in notebook processor VRMs and synchronous rectifier in POL converters for computing and telecom systems, featuring 8.0 mΩ RDS(on) at VGS = 10 V, 100% avalanche-tested, and lead-free/halogen-free packaging.
For engineers reviewing the IRF7413ZGTRPBF datasheet, IRF7413ZGTRPBF pinout, IRF7413ZGTRPBF application, or IRF7413ZGTRPBF equivalent, key selection criteria include gate charge (Qg = 9.5 nC), output charge (Qoss = 5.6 nC), reverse recovery charge (Qrr = 16–24 nC), thermal resistance (RθJA = 50–55 °C/W), and body diode forward voltage (VSD ≤ 1.0 V).
Technical Context
This dual N-channel MOSFET integrates two identical enhancement-mode HEXFET devices in a single SO-8 package, enabling high-efficiency synchronous buck topologies where one device serves as the high-side control switch and the other as the low-side synchronous rectifier. Its ultra-low RDS(on) and gate impedance support high-frequency operation up to 1 MHz with minimized conduction and switching losses.
The device features fully characterized unclamped inductive avalanche capability (EAS = 32 mJ), tight gate threshold voltage distribution (1.35–2.25 V), and robust body diode performance (trr = 24–36 ns, Qrr = 16–24 nC), making it suitable for hard-switched DC/DC converters requiring reliable transient handling and low shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and 5 V/3.3 V output POL stages |
| RDS(on) max | 10 mΩ @ VGS = 10 V - Enables ≤1.7 W conduction loss at 13 A DC, critical for VRM efficiency |
| Qg | 9.5 nC typ - Low gate drive energy reduces controller loading and enables fast turn-on at ≥500 kHz |
| Qoss | 5.6 nC - Minimizes capacitive switching loss during high-side turn-off in synchronous buck |
| Qrr | 16–24 nC - Directly impacts cross-conduction loss and thermal stress on complementary FET |
| RθJA | 50–55 °C/W - Defines maximum power dissipation (1.6–2.5 W) under standard PCB layout conditions |
| VGS(th) | 1.35–2.25 V - Ensures reliable turn-on with 3.3 V or 5 V gate drivers without overdrive |
Pinout & Package
IRF7413ZGTRPBF is housed in a surface-mount SO-8 package with exposed drain pad for enhanced thermal performance. Pin numbering follows standard top-view orientation per Infineon's datasheet (Rev. 07/10/09).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Shared drain terminals for both MOSFETs - connected to high-current power path and thermal pad |
| 8 | Gate 1 (G1) | Control terminal for first MOSFET - used as high-side control FET in buck converter |
| Source 1 (S1) | Source terminal for first MOSFET | Connected to switch node; requires low-inductance routing to minimize ringing |
| Source 2 (S2) | Source terminal for second MOSFET | Typically tied to ground in synchronous rectifier configuration |
| Gate 2 (G2) | Control terminal for second MOSFET | Driven by dedicated low-side gate driver; timing must be non-overlapping with G1 |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 8.0 mΩ typ @ VGS = 10 V - reduces I²R losses in high-current CPU core rails |
| Fully characterized avalanche | EAS = 32 mJ - withstands inductive energy spikes during load transients without failure |
| Low Qgd/Qgs1 ratio | Qgd = 3.0 nC, Qgs1 = 3.0 nC - suppresses Cdv/dt induced turn-on and prevents shoot-through |
| Lead-free/halogen-free | RoHS-compliant and JEDEC J-STD-020 qualified - meets IPC Class 3 assembly requirements |
| Body diode trr | 24–36 ns - enables clean commutation in synchronous rectification without excessive voltage overshoot |
Applications
| Notebook Processor VRM | Graphics Card POL Converter |
|---|---|
Use Scenario: High-current, multi-phase voltage regulator supplying Intel/AMD CPU cores with dynamic load steps up to 200 A/µs. IC Role / Device Role: Control FET (high-side) and synchronous rectifier (low-side) in interleaved buck stage. Use Value: 8.0 mΩ RDS(on) and 9.5 nC Qg enable >92% efficiency at 12 V input / 1.0 V output, 100 A load. | Use Scenario: Point-of-load regulation for GPU memory and logic rails in PCIe-based graphics cards. IC Role / Device Role: Dual-FET implementation in compact 2-phase buck converter with 500 kHz–1 MHz switching. Use Value: Matched RDS(on) and Qrr between channels ensures balanced current sharing and thermal distribution. |
| Telecom Server DC/DC Module | Networking Switch ASIC Supply |
Use Scenario: 48 V to 3.3 V intermediate bus conversion feeding baseband processing units in 5G base stations. IC Role / Device Role: Synchronous rectifier FET in secondary-side synchronous rectification stage. Use Value: 1.0 V VSD and 24 ns trr reduce forward conduction loss and reverse recovery loss versus Schottky alternatives. | Use Scenario: Compact 12 V to 0.85 V supply for high-speed Ethernet switch ASICs with strict ripple and transient response specs. IC Role / Device Role: High-side control FET in monolithic or discrete buck controller solution. Use Value: 100% avalanche-tested rating ensures reliability under hot-swap and short-circuit fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel dual MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7413PBF | Same die, Pb-containing finish (not RoHS-compliant); identical RDS(on), Qg, and thermal specs | Restricted to legacy industrial designs where lead-free compliance is not required | Select only if RoHS exemption applies and existing qualification data supports re-use |
| Si7852DP-T1-GE3 | 30 V, 12 A, RDS(on) = 9.5 mΩ, Qg = 11.5 nC, Qrr = 12 nC - lower Qrr but higher Qg | Better suited for light-load efficiency due to lower Qrr, but requires stronger gate driver | Prefer for high-frequency, low-duty-cycle POL where reverse recovery dominates loss |
Compared with IRF7413ZGTRPBF, IRF7413PBF offers identical electrical performance but lacks RoHS compliance, while Si7852DP-T1-GE3 trades slightly higher gate charge for significantly lower reverse recovery charge-making it more efficient in discontinuous conduction mode but less optimal for high-current continuous operation.
Availability
IRF7413ZGTRPBF is available at Aetrix Electronics and suitable for notebook VRMs, graphics card POL converters, and telecom server DC/DC modules requiring stable component supply, long-term lifecycle support, and full traceability.
Supply support for IRF7413ZGTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The IRF7413ZGTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC/DC conversion in computing and communications infrastructure where low RDS(on), fast switching, and ruggedness are mandatory.
FAQ
What is the maximum continuous drain current for IRF7413ZGTRPBF at 70°C ambient?
The maximum continuous drain current is 10 A at TA = 70°C with VGS = 10 V, derated from 13 A at 25°C due to thermal limitations of the SO-8 package. This value assumes standard 1-in² 2-oz copper PCB layout with no forced airflow. Actual current capability depends on board layout, heatsinking, and duty cycle.
Does IRF7413ZGTRPBF integrate a body diode, and what are its key parameters?
Yes, it includes an intrinsic integral reverse p-n junction body diode rated for 3.1 A continuous source current and 100 A pulsed current. Key parameters include VSD ≤ 1.0 V at IS = 10 A, trr = 24–36 ns, and Qrr = 16–24 nC at TJ = 25°C, all measured with di/dt = 100 A/µs and VDD = 15 V.
Can IRF7413ZGTRPBF be used as a single-FET replacement in existing SO-8 layouts?
No - IRF7413ZGTRPBF contains two independent N-channel MOSFETs sharing a common drain terminal, unlike single-die SO-8 FETs. Pinout differs: pins 1–7 are all drain-connected, while gates and sources are separate. Substitution requires schematic and layout revision to accommodate dual-gate/dual-source routing and avoid short circuits.
What is the recommended gate resistor value for driving IRF7413ZGTRPBF in a 1 MHz synchronous buck converter?
A gate resistor of 2.2–4.7 Ω is recommended to balance switching speed and ringing suppression. With RG = 2.3–4.5 Ω (typ/max internal), external RG should limit peak gate current to < 2 A while keeping tr/tf within 6–11 ns. Layout must minimize loop inductance (< 2 nH) to prevent oscillation during hard switching.
IRF7413ZGTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1210 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7413ZGTRPBF FAQ
1.How can I place an order for IRF7413ZGTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7413ZGTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7413ZGTRPBF reliable?
The price and inventory of IRF7413ZGTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7413ZGTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7413ZGTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7413ZGTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7413ZGTRPBF?
IRF7413ZGTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7413ZGTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7413ZGTRPBF?
For technical support, including IRF7413ZGTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7413ZGTRPBF requirements.
6.How does Aetrix verify that IRF7413ZGTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7413ZGTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7413ZGTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7413ZGTRPBF?
All IRF7413ZGTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7413ZGTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7413ZGTRPBF part is unused and in its original packaging.
Return procedure for IRF7413ZGTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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