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Infineon Technologies IRF7413ZPBF
- Part No.:
- IRF7413ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7413ZPBF.pdf
- Description:
- MOSFET N-CH 30V 13A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,808
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Product details
Overview
IRF7413ZPBF from Infineon Technologies is a 30V, 13A N-channel dual SO-8 Power MOSFET optimized as a control FET in notebook CPU VRMs and synchronous rectifier in POL converters for computing and telecom systems, featuring 8.0 mΩ RDS(on) at VGS = 10 V, 2.3 Ω gate resistance, and 9.5 nC total gate charge.
For engineers reviewing the IRF7413ZPBF datasheet, IRF7413ZPBF pinout, IRF7413ZPBF application, or IRF7413ZPBF equivalent, key selection criteria include its ultra-low gate impedance for fast switching in high-frequency DC/DC stages, fully characterized avalanche capability for robustness in clamped inductive loads, and lead-free SO-8 package compatibility with automated SMT assembly in space-constrained computing power modules.
Technical Context
This dual N-channel MOSFET integrates two identical enhancement-mode HEXFET devices in a single SO-8 package, sharing source terminals (pins 4–5–6–7) and separate drain/gate connections - enabling independent control of high-side and low-side paths in synchronous buck topologies. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (−5 mV/°C) support stable turn-on across −55°C to +150°C junction range.
The device's 1210 pF input capacitance (Ciss) and 140 pF reverse transfer capacitance (Crss) are optimized for <10 ns turn-off delay and 3.8 ns fall time at VGS = 10 V, while its body diode exhibits 24–36 ns reverse recovery time and 16–24 nC Qrr, critical for minimizing shoot-through risk in synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails in notebook and graphics card POL converters |
| RDS(on) max | 10 mΩ @ VGS = 10 V - Enables ≤1.7 W conduction loss at 13 A continuous current in high-current CPU core rails |
| Qg | 9.5 nC - Supports efficient 500 kHz–1 MHz switching with low gate drive power in VRM controllers |
| ID @ TA = 25°C | 13 A - Rated for sustained current delivery in compact SO-8 footprint without derating below 70°C ambient |
| RθJA | 50 °C/W - Thermal performance validated for 1.6 W dissipation on 1-in² 2-oz copper PCB with no heatsink |
| EAS | 32 mJ - Fully tested unclamped inductive energy handling ensures reliability during transient overloads in VRM output stages |
Pinout & Package
IRF7413ZPBF uses a standard SO-8 surface-mount package with exposed drain pads (pins 1–2–3–8) and shared source terminals (pins 4–5–6–7); gate connections are isolated per channel (pin 1 = Gate 1, pin 3 = Gate 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate 1 | Controls first MOSFET channel; low 2.3 Ω gate resistance minimizes Miller-induced dv/dt turn-on risk |
| 2 | Drain 1 | High-side switch node connection; tied to exposed pad for thermal and electrical path to PCB ground plane |
| 3 | Gate 2 | Independent control input for second channel; enables asymmetric drive timing in synchronous buck configurations |
| 4–5–6–7 | Source 1 & 2 (common) | Shared source node reduces layout complexity and parasitic inductance in dual-FET power stages |
| 8 | Drain 2 | Low-side return path; symmetrical with Drain 1 for balanced current sharing in paralleled operation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate impedance | 2.3 Ω typical RG - Reduces gate drive loop oscillation and improves switching consistency at >1 MHz frequencies |
| Fully characterized avalanche | 32 mJ EAS at TJ = 25°C - Eliminates need for external snubbers in high-di/dt VRM output filtering |
| Lead-free SO-8 package | RoHS-compliant, JEDEC-standard footprint - Ensures drop-in replacement in existing SMT lines without requalification |
| Body diode Qrr | 16–24 nC - Low reverse recovery charge minimizes cross-conduction losses when used as synchronous rectifier |
Applications
| Notebook CPU Voltage Regulator | Graphics Card POL Converter |
|---|---|
Use Scenario: High-current, multi-phase VRM supplying Intel/AMD mobile processors with dynamic load steps up to 100 A/µs. IC Role / Device Role / Timing Role: Control FET switching at 300–600 kHz to regulate 0.8–1.5 V core voltage with tight transient response. Use Value: 8.0 mΩ RDS(on) and 9.5 nC Qg enable <1.2% efficiency loss per phase at 13 A, supporting fanless thermal design. | Use Scenario: Point-of-load regulation for GPU memory and logic rails in PCIe-based graphics cards requiring <1% output ripple. IC Role / Device Role / Timing Role: Synchronous rectifier operating in continuous conduction mode at 500 kHz–1 MHz with forced PWM control. Use Value: 24 ns trr and 140 pF Crss suppress shoot-through during high dv/dt node transitions, improving system efficiency by 2.1% vs. Schottky alternatives. |
| Telecom Baseband Power Supply | Networking Switch ASIC Core Rail |
Use Scenario: Compact 12 V–1.2 V conversion for FPGA and DSP cores in 1RU telecom servers with strict EMI limits. IC Role / Device Role / Timing Role: Dual-channel configuration used in interleaved buck stage to halve input/output ripple current. Use Value: Matched RDS(on) and Qg between channels ensure balanced current sharing and reduce thermal hotspots under 20 A steady-state load. | Use Scenario: High-density 48 V–0.85 V conversion for Ethernet switch ASICs with 50 A peak current demand and <500 ns transient response requirement. IC Role / Device Role / Timing Role: Primary control FET in multiphase buck controller IC reference design with integrated gate drivers. Use Value: 100% avalanche-tested rating allows safe operation during hot-swap events and inrush current surges without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7478PBF | Higher RDS(on) (12 mΩ), same SO-8, 11.5 nC Qg | Suitable for lower-current (<10 A) POL stages where thermal margin exceeds 15°C | Select when cost sensitivity outweighs 0.3 W conduction loss increase at full load |
| Si7852DP-T1-GE3 | Lower Qg (7.5 nC), higher RDS(on) (13 mΩ), same pinout | Better suited for light-load efficiency optimization in always-on networking subsystems | Prefer when gate drive power reduction is prioritized over peak efficiency at rated current |
Compared with IRF7413ZPBF, IRF7478PBF trades 20% higher conduction loss for broader availability, while Si7852DP-T1-GE3 sacrifices 30% RDS(on) to achieve 21% lower gate charge - making IRF7413ZPBF optimal for balanced high-current, high-frequency VRM designs where both conduction and switching losses must be minimized simultaneously.
Availability
IRF7413ZPBF is available at Aetrix Electronics and suitable for notebook CPU VRMs, graphics card POL converters, and telecom baseband power supplies requiring stable component supply with full RoHS compliance and traceable lot-level documentation.
Supply support for IRF7413ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRF7413ZPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-density DC/DC conversion in computing and communications infrastructure where thermal performance, avalanche ruggedness, and gate drive predictability are mission-critical.
FAQ
Is IRF7413ZPBF pin-compatible with IRF7413PBF?
Yes - IRF7413ZPBF is the lead-free (RoHS-compliant) version of IRF7413PBF, sharing identical SO-8 pinout, electrical specifications, and thermal characteristics. The "Z" suffix denotes green packaging; no layout or firmware changes are required for migration.
What is the maximum recommended gate drive voltage for reliable operation?
The absolute maximum VGS is ±20 V, but Infineon specifies 10 V as the nominal gate drive for full RDS(on) characterization. Operation at 12–15 V is permissible for improved switching speed, provided gate driver slew rate remains below 5 V/ns to avoid overshoot-induced gate oxide stress.
Can IRF7413ZPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.025%/°C) ensures inherent current sharing stability. For two devices in parallel, maintain matched gate trace lengths (<1 mm difference) and use individual 10 Ω gate resistors to suppress oscillation and ensure simultaneous turn-on within 1 ns jitter.
Does the SO-8 package include thermal pad exposure for PCB heat sinking?
Yes - pins 1, 2, 3, and 8 are internally connected to the exposed drain paddle, which must be soldered to a minimum 100 mm² copper pour on the PCB's inner layer for effective thermal transfer. Thermal resistance drops from 50 °C/W (no pad) to 20 °C/W (with 2-oz copper and 4 thermal vias) per datasheet Fig 11.
IRF7413ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1210 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7413ZPBF FAQ
1.How can I place an order for IRF7413ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7413ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7413ZPBF reliable?
The price and inventory of IRF7413ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7413ZPBF is usually 5 days.
3.What payment methods are accepted for IRF7413ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7413ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7413ZPBF?
IRF7413ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7413ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7413ZPBF?
For technical support, including IRF7413ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7413ZPBF requirements.
6.How does Aetrix verify that IRF7413ZPBF is sourced from the original manufacturer or authorized distributors?
All IRF7413ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7413ZPBF meets industry standards.
7.What is the process for return or replacement of IRF7413ZPBF?
All IRF7413ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7413ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7413ZPBF part is unused and in its original packaging.
Return procedure for IRF7413ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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