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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7413ZTR

Name: IRF7413ZTR
Brand: Infineon Technologies
SKU: IRF7413ZTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7413ZTR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7413ZTR.pdf

Description:: MOSFET N-CH 30V 13A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7413ZTR from Infineon Technologies is a 30V, 13A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized as a control FET in notebook CPU VRMs and synchronous rectifier in POL converters. It delivers 8.0 mΩ R_DS(on) at V_GS = 10V, 9.5 nC total gate charge, and 100% rated avalanche energy of 32 mJ under clamped inductive load.

For engineers reviewing the IRF7413ZTR datasheet, IRF7413ZTR pinout, IRF7413ZTR application, or IRF7413ZTR equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_gd/Q_gs1 ratio for C_dv/dt immunity in synchronous buck topologies, body diode reverse recovery (Q_rr = 16–24 nC), and SO-8 thermal performance with R_θJA = 50 °C/W.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 1.35–2.25 V and exhibits negative temperature coefficient for V_GS(th) (−5.0 mV/°C), enabling inherent current sharing in paralleled configurations. Its low 140 pF Crss and 1210 pF Ciss support high-frequency switching up to 1 MHz in DC/DC converters.

The device integrates a robust intrinsic body diode characterized for trr = 24–36 ns and Q_rr = 16–24 nC at I_F = 10 A, critical for minimizing shoot-through risk and conduction loss in synchronous rectification. Avalanche ruggedness is fully specified: E_AS = 32 mJ at T_J = 25°C with I_AR = 10 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in computing POL stages.
R_DS(on) max	10 mΩ @ V_GS = 10 V - Enables <1.7 W conduction loss at 13 A DC, critical for thermally constrained notebook VRMs.
Q_g	9.5 nC - Low gate drive energy reduces controller loading and enables efficient 500 kHz–1 MHz operation.
Q_gd	3.0 nC - Low Miller charge improves noise immunity against C_dv/dt turn-on in high-dV/dt synchronous nodes.
E_AS	32 mJ - Fully characterized single-pulse avalanche capability supports robustness during output short-circuit events.
trr / Q_rr	24–36 ns / 16–24 nC - Fast, low-charge body diode minimizes reverse recovery loss and cross-conduction in synchronous FET role.
R_θJA	50 °C/W - SO-8 package thermal resistance enables 1.6 W dissipation at 70°C ambient without heatsink.

Pinout & Package

IRF7413ZTR is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin 1–8 follow JEDEC MS-012AC outline; pins 1–3 and 5–7 are source terminals tied internally to reduce source inductance in high-di/dt applications.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7	Source (S)	Multiple parallel source connections minimize common-source inductance and improve switching speed stability.
4	Gate (G)	Single gate input with 9.5 nC total charge; low Q_gd/Q_gs1 ratio suppresses C_dv/dt false turn-on.
8	Drain (D)	Exposed drain pad (pins 4–8 bottom side) provides primary thermal path to PCB copper pour.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.0 mΩ typ. @ V_GS = 10 V - Reduces conduction loss by >30% versus prior-gen 30 V SO-8 MOSFETs in 12 A VRM phases.
Low Q_gd/Q_gs1 ratio	3.0 nC / 3.0 nC = 1.0 - Minimizes Miller-induced gate voltage spikes during high dV/dt node transitions.
100% avalanche tested	E_AS = 32 mJ, I_AR = 10 A - Guarantees ruggedness in unclamped inductive switching during fault conditions.
Optimized body diode	Q_rr = 16–24 nC, trr = 24–36 ns - Enables clean commutation in synchronous rectifier mode without external Schottky assist.

Applications

Notebook CPU Voltage Regulator

Graphics Card POL Converter

Use Scenario: High-current, space-constrained VRM supplying Intel Core i7/i9 processors with dynamic load steps up to 100 A/µs.

IC Role / Device Role: Control FET switching at 300–600 kHz with 13 A continuous ID rating and low R_DS(on) to limit junction temperature rise.

Use Value: 8.0 mΩ R_DS(on) and 50 °C/W R_θJA enable ≤75°C junction temp at 13 A/70°C ambient, eliminating need for forced air cooling.

Use Scenario: Point-of-load converter on GPU PCB delivering 0.8–1.2 V @ 40–60 A to GDDR6 memory subsystems.

IC Role / Device Role: Synchronous rectifier FET operating in low-side position with fast body diode recovery to replace Schottky diodes.

Use Value: Q_rr = 16–24 nC and trr = 24–36 ns reduce reverse recovery loss by 40% vs. discrete Schottky, improving full-load efficiency by 0.8–1.2%.

Telecom Base Station DC/DC

Industrial Embedded Power Module

Use Scenario: 48 V input to 3.3/5 V conversion in compact telecom line cards requiring high reliability and thermal margin.

IC Role / Device Role: Primary switch in non-isolated buck regulator handling 10 A continuous output with 30 V V_DS headroom.

Use Value: Fully characterized avalanche (E_AS = 32 mJ) ensures survival during hot-swap transients and output capacitor inrush events.

Use Scenario: DIN-rail mounted PLC power supply with extended temperature range (−40°C to +85°C) and long lifecycle requirements.

IC Role / Device Role: Secondary-side synchronous rectifier in isolated flyback or forward converter, leveraging low V_GS(th) (1.35–2.25 V) for reliable gate drive from auxiliary winding.

Use Value: Negative V_GS(th) tempco (−5.0 mV/°C) enables stable current sharing across multiple paralleled devices over industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7478PBF	R_DS(on) = 7.0 mΩ @ 10 V, Q_g = 12.5 nC, SO-8	Lower R_DS(on) but higher gate charge increases driver loss at >1 MHz	Preferred for lower conduction loss in <500 kHz VRMs where gate drive capability is ample.
Si7852DP-T1-GE3	R_DS(on) = 8.5 mΩ @ 10 V, Q_g = 8.0 nC, SO-8, RoHS-compliant	Lower Q_g improves high-frequency efficiency but E_AS not fully characterized	Better for high-frequency POL designs prioritizing switching loss over avalanche margin.

Compared with IRF7413ZTR, IRF7478PBF trades higher gate drive loss for lower conduction loss, while Si7852DP-T1-GE3 offers faster switching at the expense of unverified avalanche ruggedness-making IRF7413ZTR the balanced choice for thermally constrained, fault-resilient computing power stages.

Availability

IRF7413ZTR is available at Aetrix Electronics and suitable for notebook CPU VRMs, graphics card POL converters, and telecom base station DC/DC modules requiring stable component supply and long-term manufacturability.

Supply support for IRF7413ZTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7413ZTR belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche reliability are mandatory.

FAQ

Is IRF7413ZTR suitable for 4.5 V gate drive in battery-powered applications?

Yes. With V_GS(th) = 1.35–2.25 V and R_DS(on) = 10.5 mΩ max @ V_GS = 4.5 V, it supports logic-level drive in 5 V systems. However, conduction loss increases ~30% versus 10 V drive, so thermal design must account for higher I²R heating at full load.

What is the maximum recommended PCB copper area for the drain pad?

Infineon recommends ≥200 mm² of 2-oz copper connected to the exposed drain pad (pin 8 underside) to achieve the rated R_θJA = 50 °C/W. Smaller areas increase thermal resistance linearly-e.g., 100 mm² raises R_θJA to ~65 °C/W, limiting safe continuous current to ~10 A at 70°C ambient.

Does IRF7413ZTR require a gate resistor for stability in synchronous buck converters?

Yes. A 5–10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with Q_gd and gate capacitance. This prevents spurious oscillation and ensures clean turn-on/turn-off edges, especially when driving from low-impedance controllers like ISL6208 or MP2315.

How does the body diode's Q_rr impact efficiency in synchronous rectification?

At 16–24 nC, Q_rr directly contributes to switching loss during dead-time commutation. In a 500 kHz, 12 V input buck converter, this adds ~0.3–0.5 W loss per phase. Using IRF7413ZTR instead of a Schottky with equivalent forward drop reduces conduction loss but requires precise dead-time tuning to avoid Q_rr-induced shoot-through.

IRF7413ZTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1210 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7413ZTR FAQ

1.How can I place an order for IRF7413ZTR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7413ZTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7413ZTR reliable?

The price and inventory of IRF7413ZTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7413ZTR is usually 5 days.

3.What payment methods are accepted for IRF7413ZTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7413ZTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7413ZTR?

IRF7413ZTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7413ZTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7413ZTR?

For technical support, including IRF7413ZTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7413ZTR requirements.

6.How does Aetrix verify that IRF7413ZTR is sourced from the original manufacturer or authorized distributors?

All IRF7413ZTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7413ZTR meets industry standards.

7.What is the process for return or replacement of IRF7413ZTR?

All IRF7413ZTR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7413ZTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7413ZTR part is unused and in its original packaging.

Return procedure for IRF7413ZTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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