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Infineon Technologies IRF7416PBF
- Part No.:
- IRF7416PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7416PBF.pdf
- Description:
- MOSFET P-CH 30V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,016
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Product details
Overview
IRF7416PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V V(BR)DSS, 5.6 mΩ RDS(on) at VGS = -10 V, and -10 A continuous drain current at 25°C. It integrates a fast-recovery body diode with 56 ns trr and 99 nC Qrr, and is used in synchronous buck converters, load switches, and battery protection circuits.
For engineers reviewing the IRF7416PBF datasheet, IRF7416PBF pinout, IRF7416PBF application, or IRF7416PBF equivalent, key selection criteria include its low RDS(on) at -4.5 V gate drive (-31 mΩ), avalanche energy rating (370 mJ), thermal resistance (50 °C/W), and SO-8 footprint compatibility with dual-N/P-channel half-bridge layouts.
Technical Context
This device operates as a logic-level compatible P-channel switch optimized for high-side switching in DC-DC converters and hot-swap controllers. Its gate threshold voltage range (-1.0 V to -2.04 V) enables reliable turn-on with standard 3.3 V or 5 V microcontroller outputs, while its -30 V breakdown voltage supports 24 V industrial bus applications.
The MOSFET features a monolithic p-n junction body diode with controlled reverse recovery (trr = 56–85 ns, Qrr = 99–150 nC) and robust avalanche capability (EAS = 370 mJ). Its dynamic parameters-including 61 nC total gate charge and 22 nC Miller charge-support efficient switching at frequencies up to 500 kHz in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -30 V - Maximum blocking voltage before avalanche conduction; sets upper limit for input rail voltage in buck or OR-ing applications. |
| RDS(on) | 5.6 mΩ @ VGS = -10 V - On-resistance determines conduction loss at full load; enables <1 W dissipation at 10 A. |
| ID (continuous) | -10 A @ TA = 25°C - Continuous current rating under natural convection; derates to -7.1 A at 70°C ambient. |
| Qg / Qgd | 61 nC / 22 nC - Total and Miller gate charge values define driver strength requirement and switching speed trade-offs. |
| trr / Qrr | 56 ns / 99 nC - Body diode reverse recovery time and charge; critical for synchronous rectifier efficiency and EMI control. |
| RθJA | 50 °C/W - Junction-to-ambient thermal resistance; defines temperature rise per watt without heatsink or airflow. |
| EAS | 370 mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching in motor drives or relay snubbing. |
Pinout & Package
IRF7416PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1, 2, 3, and 8 for enhanced thermal performance and current handling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Drain (D) | High-current output node; internally paralleled for low-inductance, high-current path to PCB copper pour. |
| 4 | Gate (G) | Control input; requires negative voltage relative to source to turn on; sensitive to ESD (±20 V max). |
| 5, 6, 7 | Source (S) | Reference node for gate drive and current return; tied to system ground or floating rail in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at VGS = -4.5 V (RDS(on) ≤ 31 mΩ), enabling direct interface with 3.3 V/5 V MCUs without level-shifting. |
| Low RDS(on) at low VGS | 31 mΩ @ VGS = -4.5 V, ID = -2.8 A - reduces conduction loss in battery-powered systems where gate voltage is limited. |
| Fast body diode | trr = 56 ns, Qrr = 99 nC - minimizes reverse recovery losses and voltage overshoot during commutation in synchronous rectifiers. |
| Avalanche-rated | EAS = 370 mJ - allows safe operation under unclamped inductive switching, eliminating need for external snubbers in many power stages. |
| SO-8 thermal design | Exposed drain leads provide low thermal impedance path to PCB; supports >1.5 W continuous dissipation with 2 oz copper and 2 thermal vias. |
Applications
| DC-DC Synchronous Buck Converter | Hot-Swap Controller |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V conversion in telecom power modules with 10 A output. IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing controlled inrush limiting and steady-state switching in conjunction with N-channel sync rectifier. Use Value: Low RDS(on) and fast body diode reduce conduction and switching losses, improving efficiency by ≥1.2% over discrete diode solutions at 500 kHz. | Use Scenario: Insertion of 24 V backplane cards into live chassis without supply disturbance or arcing. IC Role / Device Role / Timing Role: Load switch controlling power delivery path; gate driven via dedicated hot-swap controller IC (e.g., LTC4215). Use Value: Avalanche rating and precise VGS(th) enable robust fault handling during short-circuit events without latch-up or destruction. |
| Battery Protection Circuit | OR-ing Diode Replacement |
Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion portable equipment (8.4 V max). IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between battery pack and system load. Use Value: RDS(on) of 5.6 mΩ limits voltage drop to <56 mV at 10 A, preserving battery runtime and reducing heat generation vs. Schottky diodes. | Use Scenario: Redundant 12 V power supplies feeding common bus in industrial PLCs. IC Role / Device Role / Timing Role: Active OR-ing element replacing high-drop Schottky diodes to minimize forward voltage and power loss. Use Value: VSD = -1.0 V body diode forward voltage combined with low RDS(on) cuts conduction loss by >70% versus 0.4 V Schottky at 8 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 7.5 mΩ @ -10 V; higher Qg (72 nC); SO-8 with same pinout. | Slightly lower avalanche rating (280 mJ); optimized for higher-frequency PWM rather than high-current DC loads. | Prefer when gate drive strength exceeds 1 A peak and layout prioritizes EMI over conduction loss. |
| IPB80P04P4L-04 | TO-263 package; RDS(on) = 3.8 mΩ @ -10 V; higher ID (80 A), but not SO-8 compatible. | Requires PCB redesign; suited for high-power (>30 A) applications where thermal headroom is critical. | Select only when board space allows D²PAK and thermal management supports >2 W continuous dissipation. |
Compared with Si7157DP-T1-GE3 and IPB80P04P4L-04, IRF7416PBF delivers optimal balance of low RDS(on), SO-8 compatibility, and robust avalanche margin for mid-power (5–15 A), space-constrained designs requiring no package change or driver upgrade.
Availability
IRF7416PBF is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and battery protection circuits requiring stable component supply and long-term industrial availability.
Supply support for IRF7416PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
IRF7416PBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-efficiency, high-reliability power switching in space-constrained industrial and computing applications.
FAQ
Is IRF7416PBF suitable for 3.3 V logic-level gate drive?
Yes. With a gate threshold voltage range of -1.0 V to -2.04 V and RDS(on) = 31 mΩ at VGS = -4.5 V, IRF7416PBF fully turns on using standard 3.3 V microcontroller outputs when referenced to source. For guaranteed performance, use a gate driver capable of sinking ≥10 mA at -3.3 V.
What is the maximum recommended operating temperature for continuous use?
The junction temperature must not exceed +150°C. At 25°C ambient and 2.5 W dissipation, junction temperature reaches ~150°C with RθJA = 50 °C/W. Derate linearly above 25°C ambient: maximum continuous power drops to 1.5 W at 70°C ambient to maintain TJ ≤ 150°C.
Can IRF7416PBF replace an N-channel MOSFET in high-side switching?
No - it is a P-channel device designed for high-side switching *without* a bootstrap circuit. Unlike N-channel MOSFETs, it requires only a negative gate-source voltage relative to source, simplifying gate drive in high-side configurations where level-shifting is undesirable.
Does IRF7416PBF have lead-free and RoHS-compliant packaging?
Yes. The "PBF" suffix denotes lead-free (Pb-free) construction and full compliance with RoHS Directive 2011/65/EU. The device uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/85% RH.
IRF7416PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 92 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7416PBF FAQ
1.How can I place an order for IRF7416PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7416PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7416PBF reliable?
The price and inventory of IRF7416PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7416PBF is usually 5 days.
3.What payment methods are accepted for IRF7416PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7416PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7416PBF?
IRF7416PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7416PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7416PBF?
For technical support, including IRF7416PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7416PBF requirements.
6.How does Aetrix verify that IRF7416PBF is sourced from the original manufacturer or authorized distributors?
All IRF7416PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7416PBF meets industry standards.
7.What is the process for return or replacement of IRF7416PBF?
All IRF7416PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7416PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7416PBF part is unused and in its original packaging.
Return procedure for IRF7416PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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