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Infineon Technologies IRF7416QTRPBF
- Part No.:
- IRF7416QTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7416QTRPBF.pdf
- Description:
- MOSFET P-CH 30V 10A 8-SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,256
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Product details
Overview
IRF7416QTRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -30 V V(BR)DSS, 2.5 W PD at 25°C, and 150°C maximum junction temperature. It delivers RDS(on) = 0.035 Ω at VGS = -4.5 V, ID = -2.8 A, enabling high-efficiency load switching in low-voltage DC power rails.
For engineers reviewing the IRF7416QTRPBF datasheet, IRF7416QTRPBF pinout, IRF7416QTRPBF application, or IRF7416QTRPBF equivalent, key selection criteria include its ultra-low on-resistance at logic-level gate drive, integrated body diode with 56–85 ns trr, and SO-8 thermal performance validated to 50°C/W RθJA.
Technical Context
This device operates as a single P-channel power switch with source-connected substrate and integral reverse p-n junction body diode. Its gate threshold voltage (VGS(th)) ranges from -1.0 V to -2.04 V, supporting direct interface with 3.3 V and 5 V microcontroller outputs without level-shifting.
Dynamic characteristics include 61 nC typical total gate charge (Qg), 22 nC Miller charge (Qgd), and fast switching with 18 ns td(on), 49 ns tr, 59 ns td(off), and 60 ns tf - optimized for synchronous buck converters and hot-swap circuits where low gate drive loss and controlled dv/dt (-5.0 V/ns peak diode recovery) are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -30 V - Maximum blocking voltage before avalanche conduction; defines safe operating range in 24 V systems. |
| RDS(on) | 0.035 Ω @ VGS = -4.5 V, ID = -2.8 A - Enables <100 mW conduction loss at 5 A, suitable for battery-powered load switches. |
| ID (continuous) | -7.1 A @ TA = 70°C - Sustained current capability under real-world board-level thermal conditions. |
| Qg | 61 nC typ - Determines gate driver power requirement and switching transition time in PWM applications. |
| trr | 56–85 ns - Body diode recovery speed directly impacts efficiency and EMI in freewheeling paths. |
| RθJA | 50 °C/W - Thermal resistance from junction to ambient in standard SO-8 layout; sets max power dissipation limit at given PCB copper area. |
Pinout & Package
IRF7416QTRPBF is housed in a surface-mount SO-8 package (JEDEC MS-012AA), featuring enhanced thermal characteristics via exposed drain pads and optimized leadframe design. The package supports tape-and-reel automation and operates up to 150°C junction temperature.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 8 | Drain (D) | Common high-current output node; internally paralleled for low RDS(on); thermally coupled to package backside. |
| 6 | Gate (G) | Control input; requires -4.5 V to fully enhance; capacitance values (Ciss = 1700 pF) impact driver sizing. |
| 7 | Source (S) | Reference node for gate drive; connects to system ground or high-side return path in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.035 Ω at -4.5 V gate drive enables efficient 3.3 V/5 V logic-compatible switching without external drivers. |
| 150°C TJ rating | Extended thermal margin allows operation in sealed enclosures or high-ambient industrial environments without derating. |
| Enhanced avalanche ruggedness | 370 mJ single-pulse EAS supports reliable operation during inductive load turn-off transients. |
| Fast body diode recovery | 56–85 ns trr minimizes reverse recovery losses and associated voltage spikes in synchronous rectification. |
Applications
| Battery Protection Circuit | Hot-Swap Controller |
|---|---|
Use Scenario: Reverse polarity and overcurrent protection in portable medical devices using Li-ion batteries. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by dedicated protection IC. Use Value: 0.035 Ω RDS(on) limits voltage drop to <175 mV at 5 A, preserving battery runtime and reducing thermal stress on PCB. | Use Scenario: Inrush current limiting during live insertion of PCIe add-in cards into server backplanes. IC Role / Device Role / Timing Role: Load switch controlling power rail enablement; coordinated with hot-swap controller's GATE signal. Use Value: Fast 18 ns turn-on delay and 49 ns rise time ensure precise timing alignment with upstream fault detection circuitry. |
| Synchronous Buck Converter | Industrial PLC I/O Module |
Use Scenario: Low-side synchronous rectifier in 12 V input, 3.3 V/10 A output DC-DC converter for FPGA power supplies. IC Role / Device Role / Timing Role: Complementary P-channel switch replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: 56–85 ns trr and 99–150 nC Qrr minimize shoot-through risk and reduce switching node ringing during dead-time transitions. | Use Scenario: Isolated digital output stage driving 24 V solenoids and relays in factory automation controllers. IC Role / Device Role / Timing Role: High-side load switch interfaced to optocoupled microcontroller output with RC gate network. Use Value: -30 V V(BR)DSS and 370 mJ EAS withstand inductive kickback from 24 V coils without snubber components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7115DP-T1-GE3 | RDS(on) = 0.028 Ω @ -4.5 V but lower ID rating (-5.3 A @ 70°C); smaller TSOP-6 package. | Limited thermal mass reduces surge current handling; unsuitable for >6 A pulsed loads. | Prefer when board space is constrained and peak current ≤5 A. |
| DMN3026LSD-13 | RDS(on) = 0.032 Ω @ -4.5 V; higher Qg (72 nC); SO-8 footprint compatible. | Slower switching (tr = 65 ns) increases switching loss above 200 kHz. | Acceptable for <100 kHz DC-DC designs where gate drive strength exceeds 1 A peak. |
Compared with Si7115DP-T1-GE3 and DMN3026LSD-13, IRF7416QTRPBF offers superior pulsed current capability (-45 A IDM) and proven avalanche energy handling (370 mJ), making it preferred for industrial-grade load switching where reliability under transient stress is non-negotiable.
Availability
IRF7416QTRPBF is available at Aetrix Electronics and suitable for battery protection circuits, hot-swap controllers, and synchronous buck converters requiring stable component supply across production lifecycles.
Supply support for IRF7416QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap technologies.
IRF7416QTRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, logic-level-driven power switching in space-constrained and thermally demanding applications.
FAQ
Is IRF7416QTRPBF suitable for high-side switching with 3.3 V microcontroller GPIO?
Yes. With VGS(th) ranging from -1.0 V to -2.04 V and RDS(on) = 0.035 Ω at -4.5 V, it fully enhances using 3.3 V logic levels when paired with a simple pull-up resistor to -5 V or -12 V rail. Gate charge of 61 nC ensures manageable drive requirements.
What is the maximum continuous current at 85°C ambient temperature?
At TA = 85°C, linear derating applies: PD = 2.5 W − (85 − 25) × 0.02 W/°C = 1.3 W. Using RDS(on) = 0.035 Ω, maximum continuous ID ≈ √(1.3 / 0.035) ≈ 6.1 A, assuming adequate PCB copper area for heat spreading.
Does IRF7416QTRPBF have a built-in ESD protection diode on the gate?
No. The datasheet does not specify integrated gate ESD protection. External Zener clamping (e.g., 12 V TVS between gate and source) is recommended for systems exposed to handling or connector mating events per IEC 61000-4-2 Level 3.
Can this MOSFET replace an N-channel device in a high-side configuration without a charge pump?
Yes - unlike N-channel MOSFETs, IRF7416QTRPBF is inherently suited for high-side switching because its P-channel structure allows direct gate control referenced to the source (load side). No bootstrap or charge pump circuitry is required.
IRF7416QTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 92 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7416QTRPBF FAQ
1.How can I place an order for IRF7416QTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7416QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7416QTRPBF reliable?
The price and inventory of IRF7416QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7416QTRPBF is usually 5 days.
3.What payment methods are accepted for IRF7416QTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7416QTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7416QTRPBF?
IRF7416QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7416QTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7416QTRPBF?
For technical support, including IRF7416QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7416QTRPBF requirements.
6.How does Aetrix verify that IRF7416QTRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7416QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7416QTRPBF meets industry standards.
7.What is the process for return or replacement of IRF7416QTRPBF?
All IRF7416QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7416QTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7416QTRPBF part is unused and in its original packaging.
Return procedure for IRF7416QTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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