Infineon Technologies IRF7420

Overview

IRF7420 from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -12 V V_DS, 14 mΩ R_DS(on) at V_GS = -4.5 V, and -11.5 A continuous drain current at T_A = 25°C. It serves as a low-side load switch or battery disconnect device in portable power management circuits.

For engineers reviewing the IRF7420 datasheet, IRF7420 pinout, IRF7420 application, or IRF7420 equivalent, key selection considerations include its ultra-low on-resistance at logic-level gate drive, integrated body diode with 62 ns reverse recovery time, thermal resistance of 50°C/W, and SO-8 leadframe optimization for board-space-constrained DC-DC and USB power delivery designs.

Technical Context

This MOSFET employs trench-gate silicon processing to achieve high channel density and low specific on-resistance. Its gate threshold voltage range (-0.4 V to -0.9 V) enables reliable turn-on with standard 3.3 V or 5 V logic controllers, while the 38 nC total gate charge supports moderate-speed switching up to ~200 kHz in synchronous buck or OR-ing configurations.

The device integrates a fast-recovery body diode (t_rr = 62–93 ns, Q_rr = 61–92 µC) with forward voltage of -1.2 V at -2.5 A, supporting bidirectional current handling in battery backup paths. Thermal design is anchored by a 50°C/W junction-to-ambient resistance on 1-in² copper, validated per JEDEC JESD51-3 standards.

Key Specifications

Pinout & Package

IRF7420 uses the standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. The leadframe is modified for improved heat spreading and multi-die compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with Si2301DS-T1-BE3 and DMG2305UVT-7, IRF7420 delivers the lowest conduction loss in the -12 V class, making it optimal for high-current battery switches where thermal headroom is constrained and gate drive voltage is ≥ -4.5 V.

Availability

IRF7420 is available at Aetrix Electronics and suitable for battery protection circuits, USB Type-C power delivery switches, hot-swap interfaces, and industrial 24 V DC input protection requiring stable component supply across production lifecycles.

Supply support for IRF7420 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF7420 belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC power distribution in portable and space-constrained systems.

FAQ

What is the maximum safe operating voltage for IRF7420 in continuous DC operation?

The IRF7420 has a guaranteed drain-source breakdown voltage (V_(BR)DSS) of -12 V at I_D = -250 µA and T_J = 25°C. Derating applies above 25°C: the temperature coefficient is +0.007 V/°C, so at 125°C junction temperature, the effective rating drops to approximately -11.3 V. Operation beyond -12 V risks avalanche failure even with current limiting.

Can IRF7420 be used in a high-side switch configuration with 5 V gate drive?

Yes - its gate threshold voltage range (-0.4 V to -0.9 V) ensures full enhancement with 5 V logic-level drive. However, high-side use requires a floating gate driver or charge pump to maintain V_GS ≤ -4.5 V relative to the source node, which rises toward V_IN. Without level-shifting, gate drive collapses as the source voltage increases, causing incomplete turn-on and excessive R_DS(on).

How does the SO-8 package's thermal performance compare to DPAK for IRF7420?

The IRF7420 is only offered in SO-8; no DPAK variant exists. Its modified SO-8 leadframe achieves R_θJA = 50°C/W on 1-in² copper - comparable to many DPAK devices despite smaller footprint. The exposed drain pad provides direct thermal path to PCB, making it more efficient per mm² than standard SO-8, though absolute power handling remains lower than larger packages like TO-252.

Is the body diode suitable for synchronous rectification in a 500 kHz buck converter?

No - while the body diode has fast t_rr (62 ns), its Q_rr (61–92 µC) and V_SD (-1.2 V) cause significant switching loss and conduction loss at 500 kHz. Synchronous rectification at this frequency requires an external Schottky or GaN FET with lower Q_rr and forward voltage. IRF7420 is best applied in <200 kHz topologies or non-synchronous freewheeling.