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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7420PBF

Name: IRF7420PBF
Brand: Infineon Technologies
SKU: IRF7420PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7420PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7420PBF.pdf

Description:: MOSFET P-CH 12V 11.5A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:4,651

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Product details

Overview

IRF7420PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load and battery management in space-constrained DC-DC and power-distribution circuits. It delivers 14 mΩ R_DS(on) at V_GS = −4.5 V, supports −11.5 A continuous drain current at 25°C, and operates across −55°C to +150°C junction temperature range - enabling use in portable power switches and USB-C PD load switches.

For engineers reviewing the IRF7420PBF datasheet, IRF7420PBF pinout, IRF7420PBF application, or IRF7420PBF equivalent, key selection criteria include its ultra-low on-resistance at low gate drive (−2.5 V), SO-8 package thermal performance (50°C/W R_θJA), body diode recovery characteristics (62 ns t_rr), and −12 V V_DSS rating for 3.3 V/5 V logic-controlled power rails.

Technical Context

This device employs HEXFET silicon process technology optimized for low R_DS(on)/area in P-channel configuration, supporting single-supply gate drive down to −1.8 V while maintaining <26 mΩ on-resistance at −8.1 A. Its integrated body diode exhibits 1.2 V forward voltage at −2.5 A and controlled reverse recovery (Q_rr = 61–92 µC), making it suitable for synchronous rectification and bidirectional current paths.

The SO-8 package uses a customized leadframe for enhanced thermal conduction and multi-die capability, with validated 20 mW/°C linear derating above 70°C ambient. Switching parameters - including 8.8 ns t_d(on), 291 ns t_d(off), and 3529 pF C_iss - are characterized at −6 V V_DS and −4.5 V V_GS, confirming suitability for medium-frequency (<1 MHz) switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−12 V: Maximum blocking voltage for 3.3 V/5 V system-level power rail switching
R_DS(on)	14 mΩ @ V_GS = −4.5 V: Enables <165 mW conduction loss at −11.5 A, critical for thermally limited PCBs
I_D (25°C)	−11.5 A continuous: Supports high-current load switching without external heatsinking on 1-in² Cu board
t_rr	62 ns typical: Limits switching losses and EMI in hard-switched topologies with fast di/dt
R_θJA	50 °C/W: Validated on 1-in² FR-4 with 2 oz Cu; defines thermal headroom for sustained 1.6 W dissipation at 70°C ambient
Q_g	38 nC total gate charge: Determines driver strength requirement for <100 ns turn-on in 500 kHz PWM control
V_GS(th)	−0.4 to −0.9 V: Ensures reliable turn-on with standard logic-level gate drivers (e.g., microcontroller GPIO)

Pinout & Package

IRF7420PBF is housed in a surface-mount SO-8 package with exposed drain paddle for improved thermal performance. The leadframe is modified for enhanced heat transfer and multi-die integration capability.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally paralleled terminals forming low-inductance, high-current drain node; connected to exposed paddle
6	Gate (G)	Control terminal requiring <38 nC charge for full enhancement; referenced to source
S (pin 6 not used for source)	Source (S)	Pin 6 is gate; source is pins 1–5,7–8 via internal connection - confirmed by SO-8 top-view marking and layout

Key Features

Feature	Design Value
Ultra-low R_DS(on) at −2.5 V	17.5 mΩ enables direct interface with 2.5 V logic without level-shifting circuitry
Enhanced SO-8 thermal design	Custom leadframe reduces R_θJA by ~20% vs. standard SO-8, supporting higher continuous current density
Controlled body diode recovery	62 ns t_rr and 61 µC Q_rr minimize voltage overshoot and ringing in inductive load switching
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile for vapor phase, IR, and wave soldering without reliability penalty

Applications

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path with fast fault response.

Use Value: 14 mΩ R_DS(on) limits voltage drop to <165 mV at 11.5 A, preserving battery runtime and reducing thermal stress.

Use Scenario: V_CONN and V_BUS power path control in USB-C receptacles.

IC Role / Device Role / Timing Role: Load switch managing 5 V/3 A power delivery with controlled inrush and reverse-current blocking.

Use Value: −0.4 V V_GS(th) ensures turn-on with 3.3 V host controller GPIO; SO-8 footprint fits tight connector spacing.

Industrial Sensor Node Power Rail

Automotive Body Control Module

Use Scenario: Local power gating for low-power sensors (e.g., I²C temperature/humidity) in battery-operated IoT nodes.

IC Role / Device Role / Timing Role: Low-quiescent-load P-channel switch enabling deep-sleep current isolation.

Use Value: −100 nA gate leakage at 8 V ensures <1 µA control-circuit loading, extending multi-year battery life.

Use Scenario: Power distribution to interior lighting and window motor drivers in 12 V automotive subsystems.

IC Role / Device Role / Timing Role: High-reliability load switch rated for −40°C to +125°C operation with transient robustness.

Use Value: −55°C to +150°C T_J range and 1013 pF C_oss support stable operation under load dump and cold-crank conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 12.5 mΩ @ −4.5 V; lower Q_g (29 nC); SO-8 but non-exposed drain	Higher efficiency at same current, but reduced thermal margin in sustained 1.6 W operation	Preferred when gate drive strength is limited and board-level cooling is adequate
DMG2307L-7	R_DS(on) = 28 mΩ @ −4.5 V; smaller SOT-23 package; higher R_θJA (125 °C/W)	Lower cost and footprint, but restricted to ≤3 A continuous due to thermal limits	Select only for low-current (<3 A), space-constrained designs where efficiency is secondary

Compared with Si7157DP-T1-GE3 and DMG2307L-7, IRF7420PBF uniquely balances ultra-low on-resistance, SO-8 thermal capability, and −12 V rating - making it optimal for 5–12 V systems demanding >8 A continuous current with minimal board area.

Availability

IRF7420PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, industrial sensor node power rails, and automotive body control modules requiring stable component supply and long-term manufacturability.

Supply support for IRF7420PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF7420PBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered specifically for high-current, low-voltage load switching in portable, automotive, and industrial power systems where compact size and thermal efficiency are critical.

FAQ

What is the maximum safe operating voltage for IRF7420PBF in continuous DC operation?

The absolute maximum drain-to-source voltage (V_DSS) is −12 V, verified per datasheet Figure 8 (SOA curve). Operation beyond this rating risks avalanche breakdown even with gate grounded. For reliable 12 V system use, design margins must account for transients - e.g., suppress >13.2 V spikes with TVS clamping to ensure long-term reliability.

Can IRF7420PBF be driven directly by a 3.3 V microcontroller GPIO without a level shifter?

Yes - its gate threshold voltage (V_GS(th)) ranges from −0.4 V to −0.9 V, and R_DS(on) is fully specified down to −2.5 V V_GS. At −3.3 V, R_DS(on) remains ≤17.5 mΩ, delivering −9.8 A with <170 mW loss. No level shifter is required for functional switching, though gate resistor selection should limit peak current during fast transitions.

How does the SO-8 package of IRF7420PBF differ thermally from standard SO-8 MOSFETs?

Its customized leadframe increases copper content and improves thermal path from die to PCB, achieving 50°C/W R_θJA on 1-in² 2 oz Cu - ~20% better than generic SO-8 packages. This allows 1.6 W continuous dissipation at 70°C ambient versus ~1.2 W for conventional variants, validated in datasheet Figure 11 (transient Z_thJA curves).

Is the body diode in IRF7420PBF suitable for synchronous rectification in buck converters?

No - while the body diode has defined t_rr (62 ns) and Q_rr (61 µC), its forward voltage (−1.2 V at −2.5 A) is too high for efficient synchronous rectification. It is intended for fault protection and bidirectional current limiting, not primary power conversion. Dedicated synchronous rectifier MOSFETs with lower V_SD and faster recovery are recommended for that function.

IRF7420PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 11.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 11.5A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 3529 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7420PBF FAQ

1.How can I place an order for IRF7420PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7420PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7420PBF reliable?

The price and inventory of IRF7420PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7420PBF is usually 5 days.

3.What payment methods are accepted for IRF7420PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7420PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7420PBF?

IRF7420PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7420PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7420PBF?

For technical support, including IRF7420PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7420PBF requirements.

6.How does Aetrix verify that IRF7420PBF is sourced from the original manufacturer or authorized distributors?

All IRF7420PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7420PBF meets industry standards.

7.What is the process for return or replacement of IRF7420PBF?

All IRF7420PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7420PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7420PBF part is unused and in its original packaging.

Return procedure for IRF7420PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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