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Infineon Technologies IRF7420TR
- Part No.:
- IRF7420TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7420TR.pdf
- Description:
- MOSFET P-CH 12V 11.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,889
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Product details
Overview
IRF7420TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in portable and battery-powered systems. It features -12 V VDS, 14 mΩ RDS(on) at VGS = -4.5 V, -11.5 A continuous drain current at TA = 25°C, and SO-8 surface-mount package with enhanced thermal leadframe. It is used in USB port power switches and battery protection circuits.
For engineers reviewing the IRF7420TR datasheet, IRF7420TR pinout, IRF7420TR application, or IRF7420TR equivalent, key selection criteria include verified RDS(on) at low gate drive (-4.5 V), body diode reverse recovery performance (62–93 ns trr), thermal resistance (50 °C/W RθJA), and SO-8 pin-compatible layout compatibility with dual-MOSFET load switches.
Technical Context
This device operates as a single P-channel power switch with gate threshold voltage of -0.4 to -0.9 V and forward transconductance of 32 S at VDS = -10 V. Its low RDS(on) enables efficient operation in 3.3 V and 5 V logic-driven load management where negative gate bias is available.
The integrated body diode supports synchronous rectification and reverse-current blocking, with VSD = -1.2 V at IS = -2.5 A and controlled Qrr (61–92 µC) for predictable turn-off behavior in DC-DC and OR-ing applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for 3.3 V/5 V system rail switching |
| RDS(on) | 14 mΩ @ VGS = -4.5 V - Enables <150 mW conduction loss at 11.5 A |
| ID (continuous) | -11.5 A @ TA = 25°C - Supports high-current USB PD or hot-swap loads |
| trr | 62–93 ns - Limits switching loss and EMI during body diode commutation |
| RθJA | 50 °C/W - Requires minimal copper area (1 in² Cu) for thermal compliance |
| Qg | 38 nC - Compatible with standard gate drivers delivering ≥1 A peak |
| VGS(th) | -0.4 to -0.9 V - Ensures reliable turn-on with 3.3 V logic-level gate drive |
Pinout & Package
IRF7420TR uses the SO-8 surface-mount package with exposed drain pad for improved thermal performance. The leadframe is optimized for vapor-phase and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Common high-side switch node; electrically tied to exposed pad for thermal path |
| 6 | Gate (G) | Control input; requires negative voltage relative to source to turn on |
| Source (S) | Source (S) | Reference terminal for gate drive; connects to system ground or positive rail depending on topology |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 14 mΩ at -4.5 V gate drive enables >95% efficiency in 5 V load switches |
| Enhanced SO-8 thermal design | Custom leadframe reduces RθJA by ~20% vs. standard SO-8, supporting higher current density |
| Low gate charge | 38 nC total gate charge minimizes driver power and speeds up switching transitions |
| Body diode with controlled Qrr | 61–92 µC reverse recovery charge ensures stable operation in bidirectional current paths |
Applications
| USB Power Delivery Switching | Battery Protection Circuit |
|---|---|
Use Scenario: Selective enable/disable of USB-C VBUS path in host devices with overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as load switch with fast turn-off response. Use Value: 14 mΩ RDS(on) limits voltage drop to <170 mV at 12 A, preserving PD compliance margins. | Use Scenario: Reverse-current blocking and charge/discharge path control in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional current control and fault isolation. Use Value: Verified -1.2 V VSD and 62 ns trr ensure low-loss reverse conduction and clean turn-off during cell balancing. |
| Hot-Swap Controller Interface | OR-ing Diode Replacement |
Use Scenario: In-rush current limiting and fault isolation in 3.3 V/5 V backplane modules. IC Role / Device Role / Timing Role: Controlled turn-on switch driven by hot-swap controller's gate driver output. Use Value: -0.4 to -0.9 V VGS(th) ensures full enhancement with 3.3 V logic, eliminating level-shifter need. | Use Scenario: Replacing Schottky diodes in redundant 12 V supply OR-ing applications. IC Role / Device Role / Timing Role: Low-loss replacement for passive diode with active reverse-bias control. Use Value: 14 mΩ RDS(on) cuts conduction loss by >80% vs. 0.4 V Schottky at 10 A, reducing thermal footprint. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 12.5 mΩ @ -4.5 V; lower Qg (28 nC); SO-8 but no exposed drain pad | Higher efficiency at same current, but reduced thermal margin in high-ambient environments | Preferred for space-constrained designs where board-level thermal relief is limited |
| DMG2305U-7 | RDS(on) = 42 mΩ @ -4.5 V; higher VGS(th) (-1.0 to -2.5 V); same SO-8 footprint | Requires stronger gate drive; less suitable for 3.3 V logic interfaces | Acceptable only when gate driver supports ≥-5 V swing and current demand ≤5 A |
Compared with Si7157DP-T1-GE3 and DMG2305U-7, IRF7420TR delivers optimal balance of low RDS(on), robust thermal design via exposed drain, and guaranteed turn-on with 3.3 V logic-making it ideal for USB PD and battery management where reliability and thermal headroom are critical.
Availability
IRF7420TR is available at Aetrix Electronics and suitable for USB Power Delivery switching, battery protection circuits, hot-swap interface modules, and OR-ing diode replacements requiring stable component supply and long-term industrial availability.
Supply support for IRF7420TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power MOSFETs and wide-bandgap devices.
The IRF7420TR belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in battery-powered and portable electronics.
FAQ
Is IRF7420TR suitable for 3.3 V logic-level gate drive?
Yes. With a gate threshold voltage range of -0.4 V to -0.9 V and guaranteed RDS(on) of 14 mΩ at VGS = -4.5 V, IRF7420TR fully enhances using standard 3.3 V microcontroller outputs driving a negative gate bias through simple level-shifting or charge-pump circuitry. No external gate driver is required for moderate-speed switching.
What is the maximum continuous current at 70°C ambient?
At TA = 70°C, the continuous drain current is rated at -9.2 A with VGS = -4.5 V. This rating assumes mounting on a 1 in² copper pad per JEDEC standards. Derating follows a linear factor of 20 mW/°C above 70°C ambient, consistent with its 50 °C/W junction-to-ambient thermal resistance.
Does IRF7420TR include an integrated body diode?
Yes. It features a monolithic integral p-n junction body diode with forward voltage of -1.2 V at IS = -2.5 A and TJ = 25°C. The diode supports reverse current flow and has characterized reverse recovery time (62–93 ns) and charge (61–92 µC), enabling use in synchronous rectification and OR-ing topologies.
Can IRF7420TR be used in parallel configurations?
Yes. Its positive temperature coefficient of RDS(on) (shown in Fig 4) ensures inherent current sharing when paralleled. The SO-8 package's symmetric layout and matched thermal path across multiple units further support stable parallel operation-commonly applied in high-current load switches and redundant power paths.
IRF7420TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 11.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3529 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7420TR FAQ
1.How can I place an order for IRF7420TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7420TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7420TR reliable?
The price and inventory of IRF7420TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7420TR is usually 5 days.
3.What payment methods are accepted for IRF7420TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7420TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7420TR?
IRF7420TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7420TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7420TR?
For technical support, including IRF7420TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7420TR requirements.
6.How does Aetrix verify that IRF7420TR is sourced from the original manufacturer or authorized distributors?
All IRF7420TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7420TR meets industry standards.
7.What is the process for return or replacement of IRF7420TR?
All IRF7420TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7420TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7420TR part is unused and in its original packaging.
Return procedure for IRF7420TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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