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Infineon Technologies IRF7420TRPBF
- Part No.:
- IRF7420TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7420TRPBF.pdf
- Description:
- MOSFET P-CH 12V 11.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,136
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Product details
Overview
IRF7420TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET power MOSFET in SO-8 package, rated for -12 V drain-source voltage, 14 mΩ RDS(on) at VGS = -4.5 V, and -11.5 A continuous drain current at TA = 25°C. It serves as a low-side load switch in portable battery-powered systems requiring efficient reverse-polarity protection and high-current pulsed switching.
For engineers reviewing the IRF7420TRPBF datasheet, IRF7420TRPBF pinout, IRF7420TRPBF application, or IRF7420TRPBF equivalent, key selection criteria include its ultra-low on-resistance at logic-level gate drive (-4.5 V), integrated body diode with 62 ns reverse recovery time, thermal resistance of 50°C/W (junction-to-ambient), and SO-8 leadframe optimization for enhanced power dissipation in space-constrained PCB layouts.
Technical Context
This device employs trench-gate silicon process technology to achieve high channel density and minimized conduction losses. Its gate threshold voltage range (-0.4 V to -0.9 V) enables reliable turn-on with standard 3.3 V or 5 V logic controllers, while the 38 nC total gate charge supports moderate-speed switching without excessive driver burden.
The MOSFET integrates a fast, low-Qrr (61–92 µC) body diode optimized for synchronous rectification and bidirectional current handling in DC-DC converters and hot-swap circuits. Thermal design is supported by a linear derating factor of 20 mW/°C above 70°C ambient and validated SO-8 thermal performance under vapor-phase soldering conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum blocking voltage for low-voltage reverse-polarity protection and load switching |
| RDS(on) | 14 mΩ @ VGS = -4.5 V - Enables <150 mW conduction loss at 11.5 A, critical for battery runtime |
| ID (25°C) | -11.5 A - Continuous current capability suitable for USB-C PD loads and motor drivers |
| Qg | 38 nC - Gate drive energy requirement compatible with microcontroller GPIO or dedicated gate drivers |
| trr | 62 ns - Fast body diode recovery reduces switching loss in buck converters and OR-ing circuits |
| RθJA | 50 °C/W - Validated thermal resistance on 1-in² copper board, enabling compact thermal layout |
| VGS(th) | -0.4 to -0.9 V - Ensures guaranteed turn-on with 3.3 V logic, eliminating need for level-shifting |
Pinout & Package
IRF7420TRPBF is housed in a surface-mount SO-8 package with exposed drain pads for improved thermal conduction. The leadframe is modified for enhanced thermal performance and multi-die compatibility, supporting high-power density designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Seven parallel drain terminals tied internally to maximize current handling and reduce thermal resistance |
| 6 | Gate (G) | Control terminal accepting logic-level negative voltage; low input capacitance (3529 pF Ciss) eases drive requirements |
| S | Source (S) | Common return path; pins 6 and 7 are source-connected in SO-8 footprint per datasheet top view |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 14 mΩ @ -4.5 V gate drive - minimizes I²R losses in high-current battery switches |
| Logic-level compatible | VGS(th) max -0.9 V - ensures full enhancement with 3.3 V microcontrollers without external bias |
| Fast body diode | 62 ns trr, 61 µC Qrr - reduces dead-time loss and EMI in synchronous buck and OR-ing applications |
| Enhanced SO-8 thermal design | 50 °C/W RθJA on 1-in² Cu - delivers 2.5 W power dissipation at 25°C ambient, exceeding standard SO-8 limits |
| Lead-free and RoHS compliant | Meets JEDEC J-STD-020 moisture sensitivity level 1 - supports standard reflow profiles without baking |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as active disconnect switch controlled by battery management IC. Use Value: 14 mΩ RDS(on) limits voltage drop to <165 mV at 11.5 A, preserving battery capacity and reducing heat generation. | Use Scenario: VCONN and VBUS power path control in USB-C receptacle designs. IC Role / Device Role / Timing Role: Load switch managing up to 3 A continuous current with fast turn-off during fault detection. Use Value: 38 nC Qg enables sub-µs switching response to USB PD fault signals, meeting USB-IF timing compliance. |
| Hot-Swap Controller Interface | Industrial Sensor Node Power Gating |
Use Scenario: Inrush current limiting and fault isolation in 12 V industrial backplanes. IC Role / Device Role / Timing Role: High-side switch (with charge pump) or low-side switch in hot-swap IC reference designs. Use Value: 46 A pulsed drain rating supports 10× inrush surges, while 50°C/W thermal resistance sustains operation without heatsink. | Use Scenario: Duty-cycled power gating for ultra-low-power wireless sensor nodes. IC Role / Device Role / Timing Role: Sleep-mode power switch disconnecting sensors and RF transceivers during idle periods. Use Value: -0.4 V minimum VGS(th) ensures reliable turn-off leakage (<100 nA) across -40°C to +85°C operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 12.5 mΩ @ -4.5 V; higher Qg (45 nC); SO-8 package | Lower conduction loss but slower switching due to higher gate charge | Preferred when minimizing steady-state loss outweighs switching speed requirements |
| DMG2305UVT-7 | RDS(on) = 42 mΩ @ -4.5 V; lower ID (−4.2 A); same SO-8 footprint | Reduced current capacity and higher on-resistance limit use to sub-3 A loads | Selected for cost-sensitive, low-current applications where board space is constrained |
Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7420TRPBF offers the best balance of low RDS(on), moderate Qg, and robust current rating-making it optimal for 5–12 A battery-switching applications where thermal headroom and logic-level drive are jointly critical.
Availability
IRF7420TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, hot-swap controller interfaces, and industrial sensor node power gating requiring stable component supply and long-term manufacturability.
Supply support for IRF7420TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.
IRF7420TRPBF belongs to Infineon's HEXFET® P-channel logic-level MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in portable and space-constrained power systems.
FAQ
What is the maximum safe operating voltage for IRF7420TRPBF?
The absolute maximum drain-to-source voltage (VDS) is -12 V, verified per datasheet Figure 8 SOA curves. Operation beyond this rating risks avalanche breakdown or permanent gate oxide damage. Derating is not required at room temperature, but system-level transient suppression (e.g., TVS diodes) is recommended for inductive load switching.
Can IRF7420TRPBF be driven directly from a 3.3 V microcontroller GPIO?
Yes - its gate threshold voltage (VGS(th)) ranges from -0.4 V to -0.9 V, ensuring full enhancement at -3.3 V gate drive. Measured RDS(on) remains ≤26 mΩ at -3.3 V (per datasheet interpolation), delivering <300 mW conduction loss at 8 A, sufficient for most portable load-switching applications.
Does IRF7420TRPBF include an integrated body diode, and what are its characteristics?
Yes - it features a monolithic N+/P-substrate body diode with forward voltage (VSD) of -1.2 V at -2.5 A and 25°C. Its reverse recovery time (trr) is 62 ns typical, and reverse recovery charge (Qrr) is 61 µC, enabling use in synchronous rectification and bidirectional current paths without external diodes.
What is the thermal performance of IRF7420TRPBF on a standard PCB?
When mounted on a 1-inch square copper pad (t ≤ 10 sec), its junction-to-ambient thermal resistance (RθJA) is 50°C/W. At 2.5 W dissipation, this yields a 125°C junction rise above ambient - within its -55°C to +150°C operating range. For continuous 2.5 W operation, ambient must remain ≤25°C or additional copper area/thermal vias are required.
IRF7420TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 11.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3529 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7420TRPBF FAQ
1.How can I place an order for IRF7420TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7420TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7420TRPBF reliable?
The price and inventory of IRF7420TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7420TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7420TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7420TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7420TRPBF?
IRF7420TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7420TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7420TRPBF?
For technical support, including IRF7420TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7420TRPBF requirements.
6.How does Aetrix verify that IRF7420TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7420TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7420TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7420TRPBF?
All IRF7420TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7420TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7420TRPBF part is unused and in its original packaging.
Return procedure for IRF7420TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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