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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7421D1PBF

Name: IRF7421D1PBF
Brand: Infineon Technologies
SKU: IRF7421D1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7421D1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7421D1PBF.pdf

Description:: MOSFET N-CH 30V 5.8A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7421D1PBF from Infineon Technologies (formerly International Rectifier) is a co-packaged FETKY device integrating a 30V N-channel HEXFET® MOSFET and a low-forward-drop Schottky diode in a single SO-8 package. It delivers R_DS(on) = 0.026 Ω @ V_GS = 10V, V_F = 0.39V, and supports 4.1A continuous source current - optimized for synchronous buck converter output stages in portable power supplies.

For engineers reviewing the IRF7421D1PBF datasheet, IRF7421D1PBF pinout, IRF7421D1PBF application, or IRF7421D1PBF equivalent, key selection criteria include its integrated MOSFET–Schottky pairing, 0.035 Ω max R_DS(on) at 4.5V drive, 84 pF Crss, 18 nC total gate charge, and SO-8 thermal-enhanced leadframe for board-level power density.

Technical Context

This Generation V HEXFET/Schottky co-package implements a single-chip synchronous rectification solution where the MOSFET replaces the freewheeling diode in DC–DC converters. Its low Q_gd/Q_g ratio (5.9/18 nC) enables fast switching with reduced Miller-induced shoot-through risk, while the Schottky's 57 ns trr and 93 nC Q_rr minimize reverse recovery losses.

The SO-8 package uses a customized leadframe to reduce R_thJA to 62.5 °C/W, supporting 2.0 W dissipation at 25°C ambient. The body diode is rated for 3.1A continuous and 33A pulsed conduction, enabling robust operation during transient load steps without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - maximum blocking voltage compatible with 5V–12V input rails in point-of-load converters
R_DS(on) @ 10V	0.026 Ω - enables <100 mW conduction loss at 4.1A, critical for >90% efficiency targets
V_F (Schottky)	0.39 V - reduces forward drop by ~40% vs. standard silicon diodes, cutting diode conduction loss
Q_g	18 nC - determines gate driver current requirement; enables efficient 1–2 MHz switching with low-side gate drivers
C_rss	84 pF - low reverse transfer capacitance improves dv/dt immunity and reduces EMI during hard switching
T_J Range	−55 to +150 °C - supports operation in thermally constrained handheld and automotive accessory environments

Pinout & Package

IRF7421D1PBF is housed in a thermally enhanced SO-8 package (JEDEC MS-012AA), featuring a modified leadframe for improved heat spreading and compatibility with vapor-phase, infrared, and wave soldering processes.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (MOSFET)	Common high-current drain connection shared between MOSFET and Schottky cathode; requires large copper pour for thermal management
6	Gate	Control terminal for MOSFET; driven by PWM controller or gate driver IC; sensitive to ESD (±20 V rating)
7, 8	Source / Anode	Common source node for MOSFET and anode for integrated Schottky; forms return path for synchronous rectification current

Key Features

Feature	Design Value
Co-packaged MOSFET + Schottky	Eliminates layout mismatch and parasitic inductance between discrete devices, improving timing alignment in synchronous rectifiers
Generation V HEXFET technology	Delivers 26% lower R_DS(on) per die area vs. prior generation, enabling smaller footprint without sacrificing current handling
Low Q_gd/Q_g ratio (0.33)	Reduces Miller plateau duration, allowing faster turn-off and tighter dead-time control in synchronous controllers
Enhanced SO-8 thermal leadframe	Lowers R_thJA by 15% vs. standard SO-8, enabling 2.0 W power dissipation on FR-4 without heatsink

Applications

Smartphone PMIC Output Stage

USB-C PD Portable Charger

Use Scenario: Final-stage 3.3V/5V buck converter supplying application processor core voltage.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing freewheeling diode; switches at 1–2 MHz with precise gate timing.

Use Value: 0.39V Schottky V_F and 0.026Ω R_DS(on) jointly reduce conduction loss by 35% vs. discrete diode + MOSFET solution.

Use Scenario: Dual-output 9V/20V buck converter in compact 30W USB-C charger.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in secondary-side regulation; handles 4.1A continuous output current.

Use Value: Integrated structure eliminates PCB routing inductance, reducing voltage spikes and improving EMI compliance at 500 kHz–1 MHz.

Wireless Headphone Charging Case

Industrial IoT Sensor Node Power

Use Scenario: Single-cell Li-ion (3.0–4.2V) to 3.3V step-down regulator powering Bluetooth SoC and audio codec.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier operating across full battery discharge curve.

Use Value: 0.040Ω R_DS(on) @ 4.5V ensures stable efficiency >88% even at V_GS = 4.5V (low battery condition).

Use Scenario: 12V-to-3.3V isolated buck converter powering ultra-low-power MCU and LoRa transceiver.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in non-isolated auxiliary supply; operates at −40°C to +85°C ambient.

Use Value: −55°C to +150°C junction rating guarantees reliability in unheated outdoor enclosures with minimal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	R_DS(on) = 0.022 Ω @ 10V; no integrated Schottky; separate diode required	Requires external Schottky for synchronous rectification; higher layout complexity	Preferred when discrete optimization of MOSFET and diode is needed for ultra-high-frequency designs (>3 MHz)
IRF7807ZPBF	Same SO-8 FETKY package; R_DS(on) = 0.016 Ω @ 10V; V_F = 0.42 V; higher ID rating (6.2A)	Higher current capability but larger Q_g (22 nC); slightly higher conduction loss in low-V_GS operation	Best suited for 5–6A output stages where peak efficiency at light load is less critical than thermal headroom

Compared with Si7850DP-T1-GE3, IRF7421D1PBF saves board space and simplifies layout via integration; versus IRF7807ZPBF, it trades 0.01 Ω lower R_DS(on) for 4 nC lower Q_g, favoring medium-current, high-switching-frequency applications.

Availability

IRF7421D1PBF is available at Aetrix Electronics and suitable for smartphone PMIC output stages, USB-C PD portable chargers, wireless headphone charging cases, and industrial IoT sensor node power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRF7421D1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and system-level integration.

The FETKY product line was developed to address board-area constraints in portable electronics by co-packaging optimized HEXFETs and Schottky diodes - targeting high-efficiency, high-density DC–DC conversion in space-limited applications.

FAQ

What is the maximum continuous drain current for IRF7421D1PBF at 70°C ambient?

The maximum continuous drain current is 4.6 A at T_A = 70°C, based on thermal derating from the 5.8 A rating at 25°C and the 16 mW/°C linear derating factor. This assumes mounting on FR-4 board with standard copper area; actual current depends on PCB layout and airflow.

Can IRF7421D1PBF be used in 3.3V-gate-drive applications?

Yes - its R_DS(on) is specified at 0.040 Ω (max) with V_GS = 4.5V and I_D = 2.1A, confirming reliable enhancement-mode operation down to logic-level gate voltages. Gate threshold voltage is 1.0 V (min), ensuring full turn-on with 3.3V microcontroller outputs.

Does the integrated Schottky diode share the same thermal path as the MOSFET?

Yes - both the MOSFET die and Schottky die are mounted on a common leadframe within the SO-8 package, resulting in coupled thermal behavior. Junction-to-ambient resistance (62.5 °C/W) applies to the entire device, and simultaneous conduction in both elements must be considered in thermal design.

Is IRF7421D1PBF RoHS-compliant and lead-free?

Yes - the "PbF" suffix explicitly denotes lead-free (RoHS-compliant) construction. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements and is qualified for consumer-grade applications per Infineon's qualification standards.

IRF7421D1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 510 pF @ 25 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7421D1PBF FAQ

1.How can I place an order for IRF7421D1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7421D1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7421D1PBF reliable?

The price and inventory of IRF7421D1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7421D1PBF is usually 5 days.

3.What payment methods are accepted for IRF7421D1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7421D1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7421D1PBF?

IRF7421D1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7421D1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7421D1PBF?

For technical support, including IRF7421D1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7421D1PBF requirements.

6.How does Aetrix verify that IRF7421D1PBF is sourced from the original manufacturer or authorized distributors?

All IRF7421D1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7421D1PBF meets industry standards.

7.What is the process for return or replacement of IRF7421D1PBF?

All IRF7421D1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7421D1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7421D1PBF part is unused and in its original packaging.

Return procedure for IRF7421D1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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