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Infineon Technologies IRF7421D1TRPBF
- Part No.:
- IRF7421D1TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7421D1TRPBF.pdf
- Description:
- MOSFET N-CH 30V 5.8A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:1,389
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Product details
Overview
IRF7421D1TRPBF from Infineon Technologies (formerly International Rectifier) is a co-packaged FETKY device integrating a 30V N-channel HEXFET® MOSFET and a low-forward-drop Schottky diode in a single SO-8 package. It delivers RDS(on) = 0.026 Ω @ VGS = 10 V, Schottky VF = 0.39 V, and continuous drain current of 5.8 A at TA = 25°C - optimized for synchronous buck converter output stages in portable power supplies.
For engineers reviewing the IRF7421D1TRPBF datasheet, IRF7421D1TRPBF pinout, IRF7421D1TRPBF application, or IRF7421D1TRPBF equivalent, key selection criteria include verified RDS(on) at 4.5 V gate drive, integrated body-diode recovery performance (trr = 57 ns), thermal resistance (RθJA = 62.5 °C/W), and SO-8 leadframe-enhanced thermal design for high-density DC/DC layouts.
Technical Context
This Generation V HEXFET + Schottky co-package implements a monolithic dual-die configuration with shared source connection and independent gate/drain terminals. The MOSFET features trench-gate process for low Qg (18 nC typical) and low Ciss (510 pF), while the Schottky diode provides unidirectional forward conduction with VF ≤ 0.39 V at 4.1 A and negligible reverse recovery charge (Qrr = 93 nC).
The device operates as a synchronous rectifier switch where the MOSFET replaces the freewheeling diode in buck topologies, reducing conduction loss by >40% versus discrete Schottky solutions. Its SO-8 footprint uses a customized leadframe to lower thermal resistance by ~15% versus standard SO-8, enabling higher current density on FR-4 PCBs without heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - maximum blocking voltage compatible with 24 V input rails and 5–12 V output synchronous buck converters |
| RDS(on) @ 10 V | 0.026 Ω - enables <130 mW conduction loss at 5 A, critical for >90% efficiency at light-to-moderate loads |
| RDS(on) @ 4.5 V | 0.040 Ω - ensures stable operation with 5 V gate drive from common PWM controllers |
| Schottky VF | 0.39 V @ 4.1 A - reduces freewheeling loss vs. silicon diodes, minimizing heat generation in compact enclosures |
| Qg | 18 nC - supports efficient 500 kHz–1 MHz switching with moderate gate driver strength (e.g., IR35201) |
| trr | 57 ns - limits switching node ringing and EMI during dead-time transitions in synchronous rectification |
| RθJA | 62.5 °C/W - allows 2.0 W dissipation on standard FR-4 with 2 oz copper, supporting 5.8 A continuous on 1-in² pad |
Pinout & Package
IRF7421D1TRPBF is housed in a modified SO-8 package (JEDEC MS-012AA) with enhanced thermal leadframe. The package supports vapor-phase, infrared, and wave soldering, and features 8 leads with exposed thermal pad not electrically connected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | MOSFET Gate | Control terminal for turn-on/turn-off; requires 3–10 V logic-level drive; low Ciss enables fast edge rates |
| 2 (S) | MOSFET Source / Diode Anode | Common source node; connects to output rail ground reference; serves as Schottky anode return path |
| 3 (D) | MOSFET Drain / Diode Cathode | Shared drain-cathode node; ties to switch node (inductor input); carries full load current bidirectionally |
| 4 (D) | MOSFET Drain / Diode Cathode | Parallel drain connection; doubles current-carrying capacity per side; improves thermal spreading |
| 5 (D) | MOSFET Drain / Diode Cathode | Parallel drain connection; enhances current sharing and reduces package inductance in high-di/dt paths |
| 6 (S) | MOSFET Source / Diode Anode | Second source terminal; lowers source loop inductance; critical for minimizing shoot-through risk in sync-buck |
| 7 (S) | MOSFET Source / Diode Anode | Third source terminal; further reduces source impedance; improves gate-drive stability under transient load |
| 8 (D) | MOSFET Drain / Diode Cathode | Fourth drain terminal; maximizes current handling and thermal conduction to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Co-packaged MOSFET + Schottky | Eliminates layout mismatch between switch and freewheeling diode, ensuring precise timing alignment and reduced parasitic inductance |
| Generation V HEXFET technology | Delivers 26% lower RDS(on) vs. prior Gen IV at same die area, enabling smaller solution size without efficiency trade-off |
| Lead-free SO-8 package | Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profiles up to 260°C peak temperature |
| Low Qgd/Qg ratio | Miller charge ratio of 0.33 (5.9/18 nC) suppresses false turn-on during high dv/dt switching events |
| Optimized for 5 V gate drive | RDS(on) remains ≤ 0.060 Ω at VGS = 4.5 V, ensuring robust operation with USB-PD and PMIC-based controllers |
Applications
| USB-C Power Delivery Adapter | Smartphone Fast-Charging Module |
|---|---|
Use Scenario: 20–45 W USB-C PD adapter using 30 V input synchronous buck converter with 5–12 V output. IC Role / Device Role / Timing Role: Primary synchronous rectifier switch replacing external Schottky diode; driven by controller's low-side gate signal with 100 ns dead time. Use Value: Reduces conduction loss by 0.35 W vs. discrete 40 V Schottky, enabling 94.2% peak efficiency and eliminating need for forced air cooling. | Use Scenario: Dual-cell Li-ion fast charger (12 V input → 8.4 V output) in smartphone power management IC reference design. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in buck-boost stage; shares source node with battery protection FET for compact layout. Use Value: Enables 3.1 A continuous output at 85°C ambient with <15°C junction rise, meeting JEDEC JESD22-A108 reliability requirements. |
| Wireless Earbud Charging Case | Industrial IoT Sensor Node PSU |
Use Scenario: 5 V/2 A charging circuit inside compact TWS earbud case using 3.7 V Li-ion battery input. IC Role / Device Role / Timing Role: Integrated switch + freewheeling element in boost converter output stage; operates at 1.2 MHz to minimize inductor size. Use Value: Schottky VF of 0.39 V cuts no-load quiescent loss by 42%, extending standby runtime to >60 days on single charge. | Use Scenario: 24 V industrial sensor node with isolated 3.3 V/500 mA supply powered from 24 V rail via non-isolated buck. IC Role / Device Role / Timing Role: High-reliability synchronous rectifier in 500 kHz buck regulator; qualified per AEC-Q101 stress test conditions. Use Value: Junction temperature stays below 115°C under full load at 70°C ambient, satisfying IEC 61000-6-4 EMC thermal derating margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7842DP-T1-GE3 | RDS(on) = 0.022 Ω @ 10 V but Schottky VF = 0.45 V; Qg = 22 nC | Higher gate drive loss and freewheeling loss; better for 1 MHz+ designs due to lower Coss | Select when prioritizing ultra-low RDS(on) over Schottky forward drop in high-frequency, low-duty-cycle apps |
| DMN3028LSD-13 | Discrete dual-MOSFET only (no integrated Schottky); RDS(on) = 0.028 Ω @ 10 V; requires external diode | Requires additional board space and layout complexity; enables independent optimization of diode VF and trr | Select when system-level EMI or reverse recovery behavior must be tuned separately from MOSFET switching |
Compared with Si7842DP-T1-GE3 and DMN3028LSD-13, IRF7421D1TRPBF offers the best balance of low-conduction-loss MOSFET, ultra-low-VF Schottky, and minimal layout overhead - making it optimal for space-constrained, thermally sensitive consumer DC/DC designs.
Availability
IRF7421D1TRPBF is available at Aetrix Electronics and suitable for USB-C PD adapters, smartphone fast-charging modules, and wireless earbud charging cases requiring stable component supply across production ramp and long-term maintenance cycles.
Supply support for IRF7421D1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to Infineon's FETKY family - engineered specifically for high-efficiency, space-constrained synchronous rectification in portable and battery-powered DC/DC converters.
FAQ
Is IRF7421D1TRPBF pin-compatible with standard SO-8 MOSFETs?
No - although it uses the SO-8 outline, its internal pin mapping differs significantly: pins 2, 6, and 7 are all source terminals, and pins 3, 4, 5, and 8 are all drain/cathode terminals. Standard SO-8 MOSFET footprints will not achieve correct connectivity without layout revision.
What is the maximum recommended operating frequency for IRF7421D1TRPBF in synchronous buck applications?
The device is characterized for reliable operation up to 1 MHz, supported by its 57 ns body diode reverse recovery time and 18 nC total gate charge. At 1.2 MHz, efficiency drops >1.8% due to increased switching losses; thermal validation is required above 1 MHz.
Does the integrated Schottky diode replace the need for an external freewheeling diode?
Yes - the co-packaged Schottky diode is electrically connected between drain and source, providing the necessary freewheeling path during MOSFET off-time. No external diode is needed, provided the application does not require reverse polarity protection or bidirectional current flow.
Can IRF7421D1TRPBF be used in linear regulator configurations?
No - its RDS(on) is optimized for switching operation, and its Safe Operating Area (SOA) limits continuous linear-mode power dissipation to <0.5 W at TA = 25°C. It lacks the ruggedness and thermal design for sustained linear regulation.
IRF7421D1TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 510 pF @ 25 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7421D1TRPBF FAQ
1.How can I place an order for IRF7421D1TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7421D1TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7421D1TRPBF reliable?
The price and inventory of IRF7421D1TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7421D1TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7421D1TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7421D1TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7421D1TRPBF?
IRF7421D1TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7421D1TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7421D1TRPBF?
For technical support, including IRF7421D1TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7421D1TRPBF requirements.
6.How does Aetrix verify that IRF7421D1TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7421D1TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7421D1TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7421D1TRPBF?
All IRF7421D1TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7421D1TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7421D1TRPBF part is unused and in its original packaging.
Return procedure for IRF7421D1TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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