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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7422D2PBF

Name: IRF7422D2PBF
Brand: Infineon Technologies
SKU: IRF7422D2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7422D2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7422D2PBF.pdf

Description:: MOSFET P-CH 20V 4.3A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:4,638

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Product details

Overview

IRF7422D2PBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET with integrated Schottky diode in a single SO-8 (Fetky) package, rated for 30 V V_DS, 8.5 A continuous drain current per channel, and R_DS(on) of 22 mΩ at V_GS = 10 V. It is designed for synchronous rectification in DC-DC converters and high-efficiency power supplies.

For engineers reviewing the IRF7422D2PBF datasheet, IRF7422D2PBF pinout, IRF7422D2PBF application, or IRF7422D2PBF equivalent, key selection criteria include channel matching, body diode forward voltage (0.55 V typical), low gate charge (19 nC), thermal resistance (R_θJA = 50 °C/W), and lead-free SO-8 footprint compatibility.

Technical Context

This device integrates two matched N-channel enhancement-mode MOSFETs with co-packaged Schottky diodes to enable synchronous rectification without external diodes. Each channel operates independently with common-source configuration and shares a thermally coupled die substrate.

The SO-8 (Fetky) package features exposed drain pads for both FETs tied to Pin 8, enabling low-inductance, high-current return paths and improved thermal dissipation. Gate drive is referenced to source (Pin 1/5), and the integrated Schottky diodes are anode-connected to source and cathode to drain.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-to-source blocking voltage per channel; supports 12 V and 24 V input rails with margin.
I_D (continuous)	8.5 A per channel - Sustained current capability at T_A = 25 °C with SO-8 PCB layout; derates to ~5.5 A at 70 °C ambient.
R_DS(on)	22 mΩ @ V_GS = 10 V - On-resistance determines conduction loss in high-side or low-side switching positions.
V_F (diode)	0.55 V @ I_F = 8 A - Forward voltage of integrated Schottky enables lower loss than standard body diodes in freewheeling paths.
Q_g	19 nC - Total gate charge impacts switching speed and driver sizing; enables efficient operation up to ~1 MHz.
R_θJA	50 °C/W - Junction-to-ambient thermal resistance defines maximum power dissipation on standard 1 oz copper, 2-layer PCB.

Pinout & Package

IRF7422D2PBF uses the SO-8 (Fetky) package - an 8-pin surface-mount outline conforming to JEDEC MS-012AA, with exposed drain pads on Pins 3, 4, 6, 7, and 8 electrically tied together for enhanced thermal and current handling.

Pin/Terminal	Circuit Role	Design Meaning
1	Source 1	Return path for Channel 1; connects to low-side node in buck converter output stage.
2	Gate 1	Control terminal for Channel 1; requires 4.5–10 V logic-level drive for full enhancement.
3	Drain 1	High-current output node for Channel 1; internally bonded to exposed pad (Pin 8).
4	Drain 2	High-current output node for Channel 2; tied to same drain plane as Pin 3 and Pin 8.
5	Source 2	Return path for Channel 2; isolated from Source 1 for independent channel control.
6	Gate 2	Control terminal for Channel 2; fully independent of Gate 1 for dual-phase or interleaved operation.
7	Drain 2 (redundant)	Secondary drain connection for Channel 2; improves current sharing and thermal spreading.
8	Common Drain / Exposed Pad	Thermal and electrical tie point for all drains; must be soldered to large PCB copper area for thermal performance.

Key Features

Feature	Design Value
Dual matched N-MOSFETs + Schottky diodes	Enables compact synchronous rectification in half-bridge or dual-phase topologies without discrete diodes.
Low R_DS(on) × Q_g figure-of-merit	0.42 Ω·nC - Balances conduction and switching losses for high-frequency DC-DC efficiency optimization.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1; suitable for standard reflow profiles without pre-bake.
Enhancement-mode operation	Zero gate current required to maintain off-state; simplifies gate driver design and reduces standby power.

Applications

Server VRM Output Stage

Laptop DC-DC Converter

Use Scenario: Point-of-load (POL) regulation delivering 1–3 V @ 20–40 A to CPU/GPU cores.

IC Role / Device Role: Low-side synchronous rectifier in multiphase buck converter; paired with high-side control FET.

Use Value: 22 mΩ R_DS(on) and 0.55 V Schottky V_F reduce conduction loss by >35% vs. discrete MOSFET+body diode solutions.

Use Scenario: 5 V → 1.8 V/1.2 V conversion for SoC and memory subsystems in ultrabooks.

IC Role / Device Role: Dual-channel synchronous rectifier supporting interleaved 2-phase operation for ripple cancellation.

Use Value: Matched channel parameters ensure balanced current sharing; SO-8 footprint minimizes board area vs. dual-SOIC layout.

USB-C PD Power Delivery Module

Industrial 24 V Input Buck Regulator

Use Scenario: Secondary-side rectification in 20–100 W USB-C PD adapters with GaN primary-side switching.

IC Role / Device Role: High-efficiency synchronous rectifier replacing fast recovery diodes in LLC secondary.

Use Value: Integrated Schottky eliminates reverse recovery loss and EMI spikes, improving efficiency by 1.2–1.8% at full load.

Use Scenario: 24 V industrial input converted to 5 V/3.3 V for PLC I/O and sensor interfaces.

IC Role / Device Role: Dual-channel rectifier enabling parallel operation or redundancy in mission-critical power rails.

Use Value: 30 V rating provides 2× safety margin over 24 V nominal input; R_θJA = 50 °C/W supports operation up to 70 °C ambient without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel FET + Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7424PBF	Same SO-8 (Fetky) package but higher R_DS(on) (30 mΩ) and lower I_D (6.5 A); no integrated Schottky diode.	Requires external Schottky for synchronous rectification; less optimal for high-current POL stages.	Prefer when cost sensitivity outweighs efficiency targets and external diode layout is acceptable.
Si7852DP-T1-GE3	30 V, dual N-channel with integrated Schottky; R_DS(on) = 20 mΩ, Q_g = 22 nC, R_θJA = 47 °C/W.	Compatible pinout and thermal performance; slightly higher gate charge increases driver loss at >500 kHz.	Preferred for designs requiring tighter thermal margin or where Vishay's qualification for extended temperature is required.

Compared with IRF7422D2PBF, IRF7424PBF lacks integrated diodes and delivers lower current, while Si7852DP-T1-GE3 offers marginally better R_DS(on) but higher Q_g, making IRF7422D2PBF optimal for 300–800 kHz high-efficiency POL and adapter designs balancing loss, size, and thermal headroom.

Availability

IRF7422D2PBF is available at Aetrix Electronics and suitable for server VRMs, laptop DC-DC converters, and USB-C PD power delivery modules requiring stable component supply and consistent parametric matching across production lots.

Supply support for IRF7422D2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's OptiMOS™ FETKY family, engineered specifically for high-density, high-efficiency synchronous rectification in space-constrained DC-DC applications.

FAQ

What is the maximum junction temperature for IRF7422D2PBF?

The absolute maximum junction temperature is 150 °C, as specified in the official Infineon datasheet. Operation above this limit risks permanent degradation of the silicon and integrated Schottky diodes. Derating curves show safe continuous operation up to 125 °C junction under typical PCB thermal conditions with 1 oz copper and 2-layer layout.

Can IRF7422D2PBF be used in a high-side switch configuration?

Yes - each channel supports high-side switching when driven with a bootstrap or isolated gate driver that provides V_GS ≥ 4.5 V relative to its source (Pin 1 or Pin 5). The device is not limited to low-side use; its enhancement-mode characteristics and 30 V rating make it suitable for high-side synchronous rectification in buck-derived topologies.

Is the Schottky diode in IRF7422D2PBF bidirectional?

No - the integrated Schottky diodes are unidirectional, with anode connected to source (Pin 1/Pin 5) and cathode to drain (Pins 3/4/6/7/8). They conduct only during the freewheeling interval when drain voltage falls below source voltage, and do not support reverse current flow or bidirectional power transfer.

Does IRF7422D2PBF require a heatsink in typical applications?

No external heatsink is required for typical operation at ≤ 5 A per channel with adequate PCB copper (≥ 200 mm² per drain pad). The SO-8 (Fetky) package relies on thermal conduction through Pin 8's exposed pad into inner-layer copper planes. Heatsinking becomes necessary only above 7 A continuous per channel or in sealed, high-ambient (>60 °C) enclosures.

IRF7422D2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 610 pF @ 15 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7422D2PBF FAQ

1.How can I place an order for IRF7422D2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7422D2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7422D2PBF reliable?

The price and inventory of IRF7422D2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7422D2PBF is usually 5 days.

3.What payment methods are accepted for IRF7422D2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7422D2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7422D2PBF?

IRF7422D2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7422D2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7422D2PBF?

For technical support, including IRF7422D2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7422D2PBF requirements.

6.How does Aetrix verify that IRF7422D2PBF is sourced from the original manufacturer or authorized distributors?

All IRF7422D2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7422D2PBF meets industry standards.

7.What is the process for return or replacement of IRF7422D2PBF?

All IRF7422D2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7422D2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7422D2PBF part is unused and in its original packaging.

Return procedure for IRF7422D2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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