Infineon Technologies IRF7422D2TR

Overview

IRF7422D2TR from Infineon Technologies (formerly International Rectifier) is a co-packaged P-channel HEXFET MOSFET and Schottky diode in a modified SO-8 package, designed for synchronous buck converter low-side switching. It features V_DS = –20 V, R_DS(on) = 0.09 Ω @ V_GS = –4.5 V, Schottky forward voltage V_F = 0.52 V @ I_F = 3.0 A, T_J ≤ 150 °C, and supports pulsed drain current up to –33 A - enabling high-efficiency power management in portable DC-DC converters.

For engineers reviewing the IRF7422D2TR datasheet, IRF7422D2TR pinout, IRF7422D2TR application, or IRF7422D2TR equivalent, key selection criteria include verified co-packaged body-diode recovery (t_rr = 56–84 ns), thermal resistance R_θJA = 62.5 °C/W on FR-4, gate charge Q_g = 15–22 nC, and SO-8 leadframe optimization for enhanced thermal performance in space-constrained portable electronics designs.

Technical Context

This device integrates a Generation 5 P-channel MOSFET with a low-V_F Schottky diode in a single SO-8 footprint, eliminating external diode placement and reducing PCB layout complexity. The MOSFET delivers R_DS(on) = 0.09 Ω at –4.5 V gate drive and exhibits g_fs = 4.0 S, while the Schottky diode provides V_F = 0.52 V at 3.0 A and 125 °C - critical for minimizing conduction loss during dead-time conduction.

The co-packaged structure enables precise timing alignment between MOSFET turn-off and Schottky conduction, supporting high-frequency operation (up to ~1 MHz) with controlled dv/dt (–5.0 V/ns peak recovery) and low reverse recovery charge (Q_rr = 71–110 nC). Its modified SO-8 leadframe improves thermal dissipation over standard SO-8, validated by R_θJA = 62.5 °C/W under JEDEC test conditions.

Key Specifications

Pinout & Package

IRF7422D2TR uses a modified SO-8 package (JEDEC MS-012AA compliant) with enhanced thermal leadframe; dimensions: 4.90 × 6.00 × 1.75 mm (L × W × H), 1.27 mm pitch, 8-pin surface-mount configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar co-packaged P-channel MOSFET + Schottky applications.

Compared with Si7851DP-T1-GE3 and DMN2011UFD-7, IRF7422D2TR offers the lowest combined conduction loss (V_F + I × R_DS(on)) across –25 to +125 °C, making it optimal for thermally aggressive portable applications where junction temperature exceeds 100 °C routinely.

Availability

IRF7422D2TR is available at Aetrix Electronics and suitable for USB-C power delivery sinks, portable SSD power rails, and wireless charging receivers requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for IRF7422D2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and system-level integration.

The IRF7422D2TR belongs to Infineon's FETKY™ family - engineered specifically for space-constrained, high-frequency DC-DC conversion where co-packaged MOSFET + Schottky integration delivers measurable board-area and thermal advantages over discrete solutions.

FAQ

What is the maximum continuous drain current for IRF7422D2TR at 70°C ambient?

The maximum continuous drain current is –3.4 A at T_A = 70 °C, derated from –4.3 A at 25 °C using the linear derating factor of 16 mW/°C. This value assumes SO-8 mounting on FR-4 board with no forced airflow and accounts for both MOSFET conduction loss and Schottky self-heating under steady-state conditions.

Does IRF7422D2TR require a negative gate drive voltage?

Yes - as a P-channel MOSFET, IRF7422D2TR turns on when V_GS is negative relative to its source terminal. A typical gate drive of –4.5 V (relative to source) achieves R_DS(on) = 0.09 Ω. Gate voltage must remain within ±12 V absolute maximum rating, and gate-to-source leakage is specified ≤ ±100 nA at ±12 V.

Can IRF7422D2TR replace a discrete MOSFET + Schottky diode pair in existing designs?

Yes - it is a direct footprint-compatible replacement for SO-8 layouts targeting buck low-side switches. Pin 1–4 are common drain, pin 5 is gate, and pins 6–8 are common source/anode. No changes to PCB layout or gate drive topology are required, though thermal validation is recommended due to different internal thermal coupling between MOSFET and diode die.

What is the reverse recovery behavior of the integrated Schottky diode?

The integrated Schottky diode exhibits t_rr = 56–84 ns and Q_rr = 71–110 nC under rated conditions (I_F = –2.2 A, di/dt = –100 A/µs, T_J = 25 °C). Unlike PN diodes, it shows no minority-carrier tail, delivering soft, predictable recovery essential for EMI-sensitive portable applications.