Infineon Technologies IRF7424PBF
- Part No.:
- IRF7424PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7424PBF.pdf
- Description:
- MOSFET P-CH 30V 11A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:5,662
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7424PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load and battery management switching. It features -30 V VDS, 13.5 mΩ RDS(on) at VGS = -10 V and ID = -11 A, SO-8 package with enhanced thermal leadframe, and operates across -55 °C to +150 °C junction temperature. Used in portable power distribution and USB-C PD load switches.
For engineers reviewing the IRF7424PBF datasheet, IRF7424PBF pinout, IRF7424PBF application, or IRF7424PBF equivalent, key selection criteria include verified RDS(on) at -4.5 V (-22 mΩ), pulsed drain current capability (-47 A), gate charge (75–110 nC), and SO-8 thermal resistance (50 °C/W).
Technical Context
This device employs trench-gate HEXFET architecture optimized for low RDS(on) per die area and fast switching. Its body diode exhibits 40–60 ns reverse recovery time and 47–71 nC Qrr at IF = -2.5 A, supporting synchronous rectification in buck converters.
The SO-8 package uses a customized leadframe to improve thermal conduction and enable multi-die configurations. Gate threshold voltage ranges from -1.0 V to -2.5 V, ensuring reliable turn-on with standard logic-level drive down to -4.5 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage in high-side switch or reverse polarity protection circuits |
| RDS(on) @ VGS = -10 V | 13.5 mΩ - Enables <1.5 W conduction loss at 11 A continuous, critical for thermally constrained PCBs |
| RDS(on) @ VGS = -4.5 V | 22 mΩ - Supports direct interface with 5 V microcontroller GPIO without level-shifting |
| Qg | 75–110 nC - Determines gate driver strength requirement; enables ~100 kHz PWM operation with 1 Ω driver |
| IDM | -47 A - Allows short-circuit robustness and inrush current handling in hot-swap applications |
| RθJA | 50 °C/W - Defines thermal derating on 1-in² copper; requires heatsinking above ~1.6 W dissipation |
Pinout & Package
IRF7424PBF is housed in a surface-mount SO-8 package (JEDEC MS-012AA) with exposed drain pads for improved thermal performance. The leadframe is modified for lower thermal resistance and supports multiple-die integration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally connected drain terminals - provide parallel current paths and low-inductance heat sinking to PCB copper |
| 6 | Gate (G) | Control input - requires ≤±20 V drive; Miller charge (12–18 nC) dominates turn-off timing |
| Source (S) | Source (S) | Reference node for gate drive and load return - tied to system ground in low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 13.5 mΩ @ -10 V enables >95% efficiency in 5 V/10 A load switches |
| Logic-level compatible | Guaranteed turn-on at VGS = -4.5 V supports direct MCU control without external drivers |
| Enhanced SO-8 thermal design | Custom leadframe reduces RθJA by ~25% vs. standard SO-8, enabling higher power density |
| Fast body diode | 40–60 ns trr and low Qrr allow use in synchronous buck topologies without added Schottky |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Preventing reverse battery connection and overcurrent in Li-ion packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path with integrated reverse-polarity blocking. Use Value: -30 V rating withstands 2-cell stack transients; 13.5 mΩ RDS(on) limits voltage drop to <120 mV at 9 A. | Use Scenario: Enabling/disabling 20 V power path between source and sink in USB-C PD systems. IC Role / Device Role / Timing Role: Load switch managing VCONN and VBUS power rails with controlled inrush. Use Value: 47 A pulsed rating handles 100 W surge; SO-8 footprint fits tight PD controller layouts. |
| Hot-Swap Controller | Industrial 24 V DC Distribution |
Use Scenario: Safe insertion of boards into live backplanes without supply disruption. IC Role / Device Role / Timing Role: Inrush-limiting MOSFET with gate-controlled slew rate via external RC. Use Value: 75–110 nC Qg allows precise dV/dt control using 100 kΩ–1 MΩ gate resistor. | Use Scenario: Remote ON/OFF control of 24 V sensors and actuators in factory automation. IC Role / Device Role / Timing Role: Low-loss power switch placed downstream of isolated DC-DC converter. Use Value: -55 °C to +150 °C operating range ensures reliability in uncooled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 12.5 mΩ @ -10 V; Qg = 65 nC; SO-8, same pinout | Slightly lower gate charge improves switching efficiency above 200 kHz | Preferred for high-frequency DC-DC output stages where gate drive loss dominates |
| IPD95R1K2P7ATMA1 | 950 V rating, 1.2 Ω RDS(on), TO-252 package - not pin-compatible | Designed for AC-DC primary-side switching, not low-voltage load control | Only suitable if system requires >60 V blocking and can accommodate larger footprint and higher RDS(on) |
Compared with Si7157DP-T1-GE3, IRF7424PBF offers higher pulsed current (−47 A vs −40 A) and better thermal resistance in SO-8; versus IPD95R1K2P7ATMA1, it delivers 100× lower RDS(on) at 30 V but lacks HV isolation capability.
Availability
IRF7424PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, hot-swap controllers, and industrial 24 V DC distribution requiring stable component supply and long-term lifecycle support.
Supply support for IRF7424PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7424PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, low-voltage power switching in space-constrained portable and industrial systems.
FAQ
What is the maximum safe operating voltage for IRF7424PBF in continuous DC operation?
The absolute maximum drain-to-source voltage is -30 V under all conditions, including transient spikes. Operation beyond this rating risks avalanche breakdown and permanent damage. Derating is not specified; design margins must be applied based on system-level surge testing per IEC 61000-4-5.
Can IRF7424PBF be used in a high-side switch configuration with 5 V logic control?
Yes - its gate threshold voltage range (-1.0 V to -2.5 V) and guaranteed RDS(on) of 22 mΩ at VGS = -4.5 V enable direct drive from 5 V microcontrollers. A pull-up resistor to VIN is required for high-side topology to ensure proper gate bias relative to source.
Does IRF7424PBF have an integrated ESD protection diode on the gate?
No - the device does not include on-chip gate ESD protection. External Zener clamping (e.g., 12 V TVS between gate and source) is recommended when routing gate traces outside shielded areas or connecting to connectors subject to human handling.
How does the SO-8 package modification affect PCB layout requirements?
The modified SO-8 leadframe increases copper exposure on pins 1–5 and 7–8, requiring full-solder mask opening over all drain pads. Thermal vias under the drain pad array (minimum 6 × 0.3 mm) are essential to achieve rated RθJA; insufficient copper area raises junction temperature by >30 °C at 2.5 W.
IRF7424PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4030 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7424PBF FAQ
1.How can I place an order for IRF7424PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7424PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7424PBF reliable?
The price and inventory of IRF7424PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7424PBF is usually 5 days.
3.What payment methods are accepted for IRF7424PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7424PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7424PBF?
IRF7424PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7424PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7424PBF?
For technical support, including IRF7424PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7424PBF requirements.
6.How does Aetrix verify that IRF7424PBF is sourced from the original manufacturer or authorized distributors?
All IRF7424PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7424PBF meets industry standards.
7.What is the process for return or replacement of IRF7424PBF?
All IRF7424PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7424PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7424PBF part is unused and in its original packaging.
Return procedure for IRF7424PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7424PBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

