My Inquiry
My Account
Infineon Technologies IRF7425PBF
- Part No.:
- IRF7425PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7425PBF.pdf
- Description:
- MOSFET P-CH 20V 15A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,927
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7425PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -20 V VDS, 8.2 mΩ RDS(on) at -4.5 V VGS, and -15 A continuous drain current at 25°C. It serves as a high-efficiency low-side load switch or synchronous rectifier in DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7425PBF datasheet, IRF7425PBF pinout, IRF7425PBF application, or IRF7425PBF equivalent, key selection criteria include its -4.5 V logic-level gate drive compatibility, 87 nC total gate charge, body diode reverse recovery time (120–180 ns), and SO-8 thermal resistance (50 °C/W junction-to-ambient).
Technical Context
This device operates as a normally-off P-channel switch with gate threshold voltage between -0.45 V and -1.2 V, enabling direct interface with 3.3 V or 5 V microcontroller outputs. Its RDS(on) increases only 1.5× from 25°C to 125°C junction temperature, supporting stable conduction in thermally constrained layouts.
The integrated body diode exhibits -1.2 V forward voltage at -2.5 A and 25°C, with 160–240 nC reverse recovery charge under di/dt = -100 A/μs - critical for minimizing switching loss in synchronous buck topologies where it replaces external Schottky diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for low-voltage battery-side switching (e.g., 12 V automotive or 5 V USB PD systems) |
| RDS(on) @ VGS = -4.5 V | 8.2 mΩ - Enables ≤120 mW conduction loss at -15 A, suitable for compact 2 W+ power stages |
| Qg | 87 nC (typ.) - Determines gate driver current requirement (~17 mA avg. for 100 kHz, 10 ns rise) |
| trr | 120–180 ns - Limits minimum off-time in synchronous rectification to avoid shoot-through |
| RθJA | 50 °C/W - Requires ≥1 in² copper pour for 2.5 W continuous dissipation at ambient 25°C |
| VGS(th) | -0.45 to -1.2 V - Ensures reliable turn-on with standard 3.3 V GPIO without level-shifting |
| Ciss | 7980 pF - Impacts gate drive loop stability and EMI filtering design in high-frequency SMPS |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012AA), 5.0 mm × 4.0 mm footprint, MSL1 rating, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Drain (D) | High-current output node; internally paralleled pins reduce package inductance and thermal resistance |
| 6 | Gate (G) | Control input; requires <100 nA leakage budget and 87 nC charge for full enhancement |
| 7, 8 | Source (S) | Return path for load current; dual pins lower source inductance for improved switching fidelity |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced down to -4.5 V VGS, eliminating need for gate driver ICs in 3.3 V systems |
| Low RDS(on) at low VGS | 13 mΩ @ -2.5 V enables use in ultra-low-voltage applications like single-cell Li-ion power paths |
| Fast body diode | 120 ns trr supports >500 kHz synchronous rectification without excessive diode loss |
| Industry-standard SO-8 | Drop-in replacement for multiple vendors' P-channel MOSFETs, simplifying second-source qualification |
Applications
| Battery Protection Circuit | USB Type-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent cutoff in 2S–3S lithium battery packs. IC Role / Device Role / Timing Role: Low-side P-channel switch controlling discharge path; activated during fault detection by protection IC. Use Value: 8.2 mΩ RDS(on) limits voltage drop to <125 mV at 15 A, preserving pack runtime and thermal margin. | Use Scenario: VBUS sourcing/sinking control in dual-role USB-C ports compliant with USB PD 3.0. IC Role / Device Role / Timing Role: Bidirectional power path switch; body diode conducts reverse current during sink mode. Use Value: 120 ns trr prevents cross-conduction during direction switching, meeting USB PD timing safety requirements. |
| Synchronous Buck Converter High-Side Driver | Industrial PLC Digital Output Module |
Use Scenario: High-side switch in isolated 5 V → 3.3 V buck converter for FPGA I/O banks. IC Role / Device Role / Timing Role: Complementary P-channel switch paired with N-channel low-side FET; driven by bootstrap gate driver. Use Value: 87 nC Qg enables efficient 1 MHz operation with <200 mW gate drive loss using discrete driver transistors. | Use Scenario: 24 V DC solid-state relay replacement in programmable logic controller output stages. IC Role / Device Role / Timing Role: Load switch isolating field devices; controlled via optocoupled MCU GPIO. Use Value: -20 V VDS and -15 A rating support 24 V/10 A industrial loads with 1.5× safety margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 9.5 mΩ @ -4.5 V; Qg = 72 nC; SO-8 package | Lower gate charge reduces driver stress but slightly higher conduction loss | Preferred when gate drive capability is limited and thermal margin exceeds 10% |
| DMN2011UFG-7 | RDS(on) = 7.8 mΩ @ -4.5 V; Qg = 95 nC; 2×2 mm WDFN package | Smaller footprint and lower RDS(on), but no exposed drain pad for thermal relief | Selected for space-constrained designs where PCB area is prioritized over thermal derating |
Compared with IRF7425PBF, Si7157DP offers lower gate drive demand at modest RDS(on) penalty, while DMN2011UFG delivers superior conduction efficiency in ultra-compact layouts - choice depends on whether thermal management or board area dominates the design constraint.
Availability
IRF7425PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, synchronous buck converters, and industrial digital output modules requiring stable component supply across production lifecycles.
Supply support for IRF7425PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with legacy expertise from International Rectifier's power MOSFET innovation.
The IRF7425PBF belongs to Infineon's HEXFET® P-channel logic-level MOSFET product line, engineered for high-efficiency, low-voltage DC-DC conversion and load switching in space- and thermal-constrained applications.
FAQ
What is the maximum safe operating temperature for IRF7425PBF?
The junction temperature must not exceed +150°C, and storage temperature range is -55°C to +150°C. At 70°C case temperature, continuous drain current drops to -12 A due to thermal derating; the 20 mW/°C linear derating factor applies above 25°C ambient on a 1 in² copper board.
Does IRF7425PBF require a gate resistor for ESD protection?
No external gate resistor is required for ESD protection - the device has built-in gate protection diodes rated for ±12 V VGS. However, a 10–100 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast switching transitions.
Can IRF7425PBF be used in parallel with identical units?
Yes - its positive temperature coefficient of RDS(on) ensures current sharing stability. Parallel operation requires matched layout symmetry, equal gate drive routing, and shared thermal plane; derate total current by 15% to account for parametric spread and thermal coupling.
Is the body diode suitable for continuous freewheeling conduction?
The body diode supports continuous conduction up to -2.5 A at 25°C (VSD = -1.2 V), but its 160–240 nC Qrr and 120–180 ns trr make it unsuitable for high-frequency freewheeling above 200 kHz without snubbing; use only in synchronous rectification or low-duty-cycle clamp applications.
IRF7425PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 8.2mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7980 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7425PBF FAQ
1.How can I place an order for IRF7425PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7425PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7425PBF reliable?
The price and inventory of IRF7425PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7425PBF is usually 5 days.
3.What payment methods are accepted for IRF7425PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7425PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7425PBF?
IRF7425PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7425PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7425PBF?
For technical support, including IRF7425PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7425PBF requirements.
6.How does Aetrix verify that IRF7425PBF is sourced from the original manufacturer or authorized distributors?
All IRF7425PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7425PBF meets industry standards.
7.What is the process for return or replacement of IRF7425PBF?
All IRF7425PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7425PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7425PBF part is unused and in its original packaging.
Return procedure for IRF7425PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7425PBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
