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Infineon Technologies IRF7425TR
- Part No.:
- IRF7425TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7425TR.pdf
- Description:
- MOSFET P-CH 20V 15A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,153
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Product details
Overview
IRF7425TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, designed for high-efficiency DC-DC conversion and load switching in portable power management. It delivers -15 A continuous drain current at VGS = -4.5 V, 8.2 mΩ RDS(on), -20 V VDS, and features integrated body diode with 120 ns reverse recovery time - used in synchronous buck converters and battery protection circuits.
For engineers reviewing the IRF7425TR datasheet, IRF7425TR pinout, IRF7425TR application, or IRF7425TR equivalent, key selection criteria include its low gate charge (87 nC typical), SO-8 footprint compatibility, -20 V breakdown rating, thermal resistance (50 °C/W), and verified performance in 1–3 A load-switching and 5–12 V input DC-DC stages.
Technical Context
This device operates as a logic-level P-channel switch requiring only -4.5 V gate drive for full enhancement, enabling direct interface with 3.3 V/5 V microcontrollers. Its negative threshold voltage (-0.45 to -1.2 V) ensures reliable turn-on under low-voltage conditions while maintaining robust off-state blocking up to -20 V.
The SO-8 package integrates three drain pins (pins 1, 2, 3) and two source pins (pins 5, 6) for enhanced current handling and thermal dissipation, with gate on pin 4. Body diode parameters (VSD = -1.2 V, Qrr = 160–240 nC) are specified for synchronous rectification use cases where controlled reverse recovery is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V rail applications. |
| RDS(on) @ VGS = -4.5 V | 8.2 mΩ - On-resistance directly determines conduction loss in high-current load switches (e.g., ≤ 150 mW at 15 A). |
| ID @ TA = 25°C | -15 A - Continuous current capability at room ambient; enables single-device support of 12 V/10 W loads. |
| Qg (typ.) | 87 nC - Total gate charge governs switching energy and driver sizing; impacts efficiency in 100–500 kHz PWM operation. |
| RθJA | 50 °C/W - Junction-to-ambient thermal resistance on 1 in² copper board; sets max power dissipation limit (2.5 W at 25°C ambient). |
| VGS(th) | -0.45 to -1.2 V - Gate threshold range ensures turn-on with standard logic-level outputs without level-shifting. |
| trr | 120–180 ns - Reverse recovery time of integrated body diode; constrains minimum dead-time in synchronous buck topologies. |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, MSL1 rated, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (D) | Drain | Three parallel drain terminals reduce package inductance and improve current sharing; connected internally to MOSFET channel. |
| 4 (G) | Gate | Control terminal; accepts -4.5 V logic-level drive; 87 nC total charge requires ~10 mA average drive current at 100 kHz. |
| 5, 6 (S) | Source | Two source terminals provide low-inductance return path; tied to system ground or load common in high-side switch configurations. |
| 7, 8 (S) | Source | Additional source connections reinforce thermal and electrical connection to PCB ground plane; not isolated or auxiliary. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = -4.5 V, eliminating need for gate drivers in 3.3 V/5 V control systems. |
| Low RDS(on) | 8.2 mΩ at -4.5 V enables <150 mW conduction loss at 15 A, reducing thermal stress in compact layouts. |
| Integrated body diode | Specified VSD = -1.2 V and Qrr = 160–240 nC support synchronous rectification without external diode. |
| SO-8 industry-standard footprint | Enables multi-source procurement and drop-in replacement with other P-channel SO-8 MOSFETs (e.g., Si2301, FDS4435). |
Applications
| Battery Protection Circuit | Synchronous Buck Converter |
|---|---|
Use Scenario: Reverse-current and overcurrent protection in single-cell Li-ion battery packs (2.5–4.2 V). IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; responds to protection IC fault signals within microseconds. Use Value: Low RDS(on) minimizes voltage drop across protection FET, preserving usable battery capacity and runtime. | Use Scenario: Lower-side switch in 5 V → 3.3 V synchronous buck regulator for microcontroller power rails. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; commutated at 300 kHz with precise dead-time control. Use Value: 120 ns trr and low Qrr reduce switching losses and EMI compared to discrete diode solutions. |
| USB Port Power Switch | Hot-Swap Controller Interface |
Use Scenario: 5 V USB 2.0/3.0 port power enable/disable with inrush current limiting. IC Role / Device Role / Timing Role: Load switch controlled by USB controller GPIO; handles up to 1.5 A steady-state current. Use Value: -20 V VDS rating provides margin against USB transient spikes; SO-8 layout simplifies routing near connector. | Use Scenario: Backplane power sequencing in industrial I/O modules with hot-plug capability. IC Role / Device Role / Timing Role: High-side switch driven by dedicated hot-swap controller (e.g., LTC4215); manages 12 V supply ramp-up. Use Value: 50 °C/W RθJA allows stable operation under sustained 10 A inrush without external heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DS-T1-E3 | RDS(on) = 115 mΩ @ -2.5 V; lower current rating (-2.7 A), smaller SOT-23 package. | Not suitable for >3 A loads; limited thermal mass prevents use in sustained high-power switching. | Select when board space is constrained and current demand is ≤2.5 A with 3.3 V gate drive. |
| FDS4435A | RDS(on) = 22 mΩ @ -4.5 V; higher ID (-8.5 A), same SO-8 footprint but different pinout (G/S/D vs D/G/S). | Requires PCB layout revision due to gate/source pin swap; unsuitable for direct replacement without redesign. | Choose for higher current density where layout change is acceptable and lower RDS(on) is prioritized over pin compatibility. |
Compared with Si2301DS-T1-E3 and FDS4435A, IRF7425TR uniquely balances -15 A current, 8.2 mΩ on-resistance, and true SO-8 pinout compatibility - making it optimal for mid-power load switching where thermal headroom and layout reuse are critical.
Availability
IRF7425TR is available at Aetrix Electronics and suitable for battery protection circuits, synchronous buck converters, USB power switches, and hot-swap controller interfaces requiring stable component supply and JEDEC-standard SO-8 sourcing.
Supply support for IRF7425TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon-based power devices.
The IRF7425TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, low-voltage DC-DC conversion and load switching in space-constrained portable and industrial power systems.
FAQ
What is the maximum continuous drain current for IRF7425TR at 70°C ambient?
The maximum continuous drain current is -12 A at TA = 70°C with VGS = -4.5 V, derated from -15 A at 25°C due to thermal limitations. This reflects the device's linear derating factor of 20 mW/°C and 50 °C/W junction-to-ambient thermal resistance on standard PCB mounting.
Does IRF7425TR have an integrated body diode, and what are its key parameters?
Yes, IRF7425TR includes a monolithic body diode with forward voltage VSD = -1.2 V at IS = -2.5 A and TJ = 25°C. Its reverse recovery time is 120–180 ns and reverse recovery charge is 160–240 nC under di/dt = -100 A/μs, enabling use in synchronous rectification without external diodes.
Can IRF7425TR be driven directly by a 3.3 V microcontroller GPIO?
No - IRF7425TR is a P-channel MOSFET requiring negative gate-to-source voltage for turn-on. A 3.3 V GPIO alone cannot produce the required -4.5 V VGS; it must be used with a level-shifting circuit or driver that pulls the gate below source potential, such as a dual-NMOS inverter or dedicated high-side gate driver.
What is the gate charge profile and how does it affect switching performance?
IRF7425TR has typical total gate charge Qg = 87 nC, with Qgs = 18 nC and Qgd = 21 nC at VDS = -10 V. This profile determines driver strength requirements: for 300 kHz switching, average gate current must exceed 26 mA to achieve fast transitions and minimize overlap losses in hard-switched topologies.
IRF7425TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 8.2mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7980 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7425TR FAQ
1.How can I place an order for IRF7425TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7425TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7425TR reliable?
The price and inventory of IRF7425TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7425TR is usually 5 days.
3.What payment methods are accepted for IRF7425TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7425TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7425TR?
IRF7425TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7425TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7425TR?
For technical support, including IRF7425TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7425TR requirements.
6.How does Aetrix verify that IRF7425TR is sourced from the original manufacturer or authorized distributors?
All IRF7425TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7425TR meets industry standards.
7.What is the process for return or replacement of IRF7425TR?
All IRF7425TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7425TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7425TR part is unused and in its original packaging.
Return procedure for IRF7425TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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