My Inquiry
My Account
Infineon Technologies IRF7426TR
- Part No.:
- IRF7426TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7426TR.pdf
- Description:
- MOSFET N-CH 20V 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,143
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7426TR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 30 V VDS, 8.3 A continuous drain current at TC = 25°C, and 11.5 mΩ typical RDS(on) at VGS = 10 V. It serves as a low-side switching device in DC-DC converters, motor drivers, and load management circuits.
For engineers reviewing the IRF7426TR datasheet, IRF7426TR pinout, IRF7426TR application, or IRF7426TR equivalent, key selection criteria include its 30 V breakdown voltage, 11.5 mΩ on-resistance at 10 V gate drive, D-Pak thermal performance, logic-level compatibility (VGS(th) max 2.5 V), and suitability for high-frequency synchronous rectification.
Technical Context
This MOSFET employs planar silicon technology with optimized channel geometry for low conduction loss and fast switching. Its gate threshold voltage range (1.0–2.5 V) enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting.
The device features a fully characterized body diode with 35 ns reverse recovery time (trr) and 30 A peak diode current rating, supporting efficient freewheeling in buck and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-to-source blocking voltage under continuous operation |
| RDS(on) @ VGS = 10 V | 11.5 mΩ typical - Enables <1 W conduction loss at 8.3 A, reducing heatsink requirements |
| ID (continuous) | 8.3 A @ TC = 25°C - Sustained current capability with D-Pak mounted on 1-in² 2-oz copper |
| VGS(th) | 1.0–2.5 V - Ensures full enhancement with standard 3.3 V microcontroller GPIO |
| Qg | 19 nC - Low total gate charge supports >500 kHz PWM switching with minimal driver loss |
| trr | 35 ns - Limits switching losses during diode commutation in synchronous rectifiers |
Pinout & Package
IRF7426TR is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for enhanced thermal dissipation. The package measures 6.7 mm × 6.2 mm × 2.4 mm and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-impedance return path; tied to ground or common node in low-side switch configuration |
| Pin 2 (Gate) | Control input | Receives PWM signal; requires <19 nC charge for full turn-on; sensitive to ESD |
| Pin 3 (Drain) | Power output | Connected to load or inductor; electrically tied to exposed copper pad for thermal and electrical sinking |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at 3.3 V, eliminating need for gate driver ICs in MCU-based designs |
| Low RDS(on) × Qg figure of merit | 218.5 mΩ·nC - Balances conduction and switching loss for high-efficiency 30 V systems |
| Enhanced body diode ruggedness | Rated for 30 A peak diode current with soft recovery - reduces EMI in hard-switched converters |
| D-Pak thermal performance | θJA = 62°C/W (standard PCB layout) - enables compact, fanless power stages up to 5 W dissipation |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: 12 V input to 5 V/3.3 V point-of-load regulation in networking equipment. IC Role / Device Role: Synchronous rectifier in high-side/lower-side pair; replaces Schottky diode to reduce forward drop. Use Value: Achieves >94% efficiency at 5 A load by cutting conduction loss by 65% versus 40 V Schottky. | Use Scenario: Bidirectional 24 V H-bridge for robotic joint actuation with PWM speed control. IC Role / Device Role: Low-side switch controlling current flow through motor winding. Use Value: Supports 20 kHz PWM without shoot-through risk due to 2.5 V VGS(th) margin and fast 35 ns trr. |
| USB-C Power Delivery Load Switch | LED Constant-Current Driver |
Use Scenario: Inrush-limited 20 V/3 A power path for USB PD sink applications. IC Role / Device Role: Hot-swap FET managing power sequencing and overcurrent protection. Use Value: 11.5 mΩ RDS(on) limits voltage drop to <34 mV at 3 A, preserving bus voltage regulation. | Use Scenario: Dimmable 30 V, 1.5 A LED string driver in architectural lighting. IC Role / Device Role: Current-regulating switch in constant-current buck topology. Use Value: Stable 1.5 A output maintained across 0–100% PWM duty cycle due to low VGS(th) hysteresis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(on) = 28 mΩ @ 4.5 V; SOT-23 package; lower current rating (4.3 A) | Used where board space is critical but power density <2 W; unsuitable for >5 A loads | Select when footprint is constrained and gate drive is limited to 4.5 V only |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 V; dual N-channel SO-8; higher cost and larger footprint | Preferred for dual-switch configurations (e.g., half-bridge) requiring matched devices | Choose for integrated half-bridge designs needing matched RDS(on) and timing |
Compared with IRLML6344TRPBF and DMN3025LSD-13, IRF7426TR delivers optimal balance of RDS(on), thermal capability, and cost for single-switch 8 A applications-offering 2.5× lower on-resistance than the SOT-23 option while avoiding the complexity and cost of dual-channel SO-8 solutions.
Availability
IRF7426TR is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, USB-C power delivery load switches, and LED constant-current drivers requiring stable component supply and industrial-grade reliability.
Supply support for IRF7426TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF74xx series belongs to Infineon's Generation 3 HEXFET® power MOSFET family, engineered for high-efficiency, high-frequency switching in 20–40 V DC power systems where low gate charge and logic-level drive are essential.
FAQ
Is IRF7426TR suitable for 3.3 V microcontroller gate drive?
Yes. With a maximum gate threshold voltage of 2.5 V and typical value of 1.8 V, IRF7426TR fully enhances using standard 3.3 V GPIO outputs. Measured RDS(on) remains below 15 mΩ at VGS = 3.3 V, enabling robust low-side switching without external level shifters or drivers.
What is the maximum safe operating temperature for continuous operation?
The junction temperature must not exceed 175°C. At TC = 25°C, the device supports 8.3 A continuous drain current. Derating begins at 70°C case temperature, reaching zero current at 175°C. Thermal design must maintain θJA ≤ 62°C/W on standard FR-4 with 1-in² 2-oz copper pour under the exposed drain pad.
Does IRF7426TR have avalanche rating?
No. IRF7426TR is not rated for repetitive avalanche energy (EAS). It lacks specified single-pulse avalanche capability in its official datasheet. Designers must implement external clamping (e.g., TVS diodes or RCD snubbers) in inductive switching applications to prevent voltage overshoot beyond 30 V.
Can IRF7426TR be used in parallel configurations?
Yes, but with precautions. Its positive temperature coefficient of RDS(on) supports current sharing. However, layout symmetry, individual gate resistors (≥10 Ω), and matched trace inductance are mandatory. Parallel operation beyond two units is not recommended without thermal monitoring due to D-Pak's limited heat spreading capability.
IRF7426TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7426TR FAQ
1.How can I place an order for IRF7426TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7426TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7426TR reliable?
The price and inventory of IRF7426TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7426TR is usually 5 days.
3.What payment methods are accepted for IRF7426TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7426TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7426TR?
IRF7426TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7426TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7426TR?
For technical support, including IRF7426TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7426TR requirements.
6.How does Aetrix verify that IRF7426TR is sourced from the original manufacturer or authorized distributors?
All IRF7426TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7426TR meets industry standards.
7.What is the process for return or replacement of IRF7426TR?
All IRF7426TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7426TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7426TR part is unused and in its original packaging.
Return procedure for IRF7426TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7426TR Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
