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Infineon Technologies IRF7433PBF
- Part No.:
- IRF7433PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7433PBF.pdf
- Description:
- MOSFET P-CH 12V 8.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,754
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Product details
Overview
IRF7433PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -12 V VDS, 24 mΩ RDS(on) at VGS = -4.5 V and ID = -8.7 A, with ultra-low on-resistance optimized for battery-powered load switching and power management circuits.
For engineers reviewing the IRF7433PBF datasheet, IRF7433PBF pinout, IRF7433PBF application, or IRF7433PBF equivalent, key selection criteria include its -12 V breakdown voltage, thermal resistance of 50 °C/W, body diode forward voltage of -1.2 V at -2.5 A, gate charge of 20 nC, and SO-8 leadframe-modified package for enhanced thermal performance in space-constrained DC-DC and portable electronics designs.
Technical Context
This device operates as a single P-channel logic-level power switch with gate threshold voltage between -0.4 V and -0.9 V, enabling direct drive from 3.3 V or 5 V microcontrollers. Its RDS(on) remains stable across junction temperatures up to +150 °C, supported by a temperature coefficient of 0.007 V/°C for V(BR)DSS.
The integrated body diode exhibits reverse recovery time of 36–54 ns and Qrr of 28–42 nC under specified conditions, making it suitable for synchronous rectification and bidirectional current paths where fast diode recovery is required without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum drain-source blocking voltage for low-voltage battery-side switching |
| RDS(on) | 24 mΩ @ VGS = -4.5 V, ID = -8.7 A - Enables <190 mW conduction loss at full rated current |
| ID (continuous) | -8.9 A @ TA = 25°C - Sustains high pulsed loads in portable power rails |
| Qg | 20 nC - Determines gate drive energy requirement for 100 kHz+ switching in compact converters |
| RθJA | 50 °C/W - Limits junction rise to ≤125°C at 1.6 W dissipation on standard PCB |
| VSD | -1.2 V @ IS = -2.5 A - Defines forward drop of integrated body diode during reverse conduction |
| tr/tf | 8.2 ns / 175 ns - Supports fast turn-on and controlled turn-off in load-switch timing-critical applications |
Pinout & Package
IRF7433PBF uses an SO-8 surface-mount package with modified leadframe for improved thermal dissipation and multi-die compatibility. Dimensions conform to JEDEC MS-012AA outline (5.00 × 4.00 mm footprint, 1.27 mm pitch).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Drain (D) | Internally paralleled drain terminals - provide low-inductance, high-current path to PCB ground plane |
| 6 | Gate (G) | Control input requiring ≤20 nC charge to fully enhance; logic-level compatible down to -2.5 V VGS |
| 7, 8 | Source (S) | Common return node for load current and gate reference; connects directly to system ground or negative rail |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 24 mΩ at -4.5 V gate drive - reduces conduction loss by >35% vs. standard P-MOSFETs in 3.3 V control systems |
| Logic-level gate | VGS(th) = -0.4 to -0.9 V - eliminates need for gate driver ICs when interfaced with 3.3 V or 5 V MCUs |
| Enhanced thermal SO-8 | 50 °C/W RθJA - achieves 1.6 W continuous power at 70°C ambient without heatsink |
| Fast body diode | trr = 36–54 ns - enables efficient reverse current handling in H-bridge and OR-ing configurations |
| Lead-free & RoHS | Halogen-free, Pb-free plating - compliant with IPC-J-STD-020 reflow profiles and automotive ELV directives |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent cutoff in Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling battery discharge path. Use Value: 24 mΩ RDS(on) limits voltage drop to <210 mV at 8.7 A, preserving battery runtime and thermal margin. | Use Scenario: VBUS enable/disable in USB-C PD sink applications with 5–20 V input range. IC Role / Device Role / Timing Role: Low-side or high-side power path switch responding to PD controller GPIO signals. Use Value: Logic-level gate allows direct interface with 3.3 V PD controllers; 1.2 V body diode supports safe reverse conduction during cable insertion. |
| Industrial Sensor Node Power Rail | Portable Medical Device Load Control |
Use Scenario: Selective power gating of RF transceivers and analog front-ends in battery-operated IIoT nodes. IC Role / Device Role / Timing Role: Standby-mode isolation switch minimizing quiescent current leakage. Use Value: IDSS ≤ 25 nA at -12 V ensures <1 µA off-state leakage, extending shelf life beyond 12 months. | Use Scenario: Controlled power-up sequencing for motor drivers and display backlights in handheld diagnostics tools. IC Role / Device Role / Timing Role: Soft-start-capable load switch managing inrush current into capacitive loads. Use Value: Gate charge of 20 nC enables precise RC-controlled turn-on ramping via external resistor, limiting dI/dt to <5 A/ms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 28 mΩ @ -4.5 V; Qg = 18 nC; SO-8 package | Slightly higher conduction loss but lower gate charge reduces drive power | Prefer when gate drive strength is limited and thermal margin exceeds 10°C |
| DMG2305UVT-7 | RDS(on) = 42 mΩ @ -4.5 V; VDS = -20 V; SOT-23-6 package | Higher voltage rating but smaller package limits power handling to 0.8 W | Choose for space-constrained designs where 20 V headroom is mandatory and current ≤3 A |
Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7433PBF delivers the lowest RDS(on) in SO-8 for -12 V systems, balancing thermal capability, gate drive simplicity, and board-area efficiency-making it optimal for 5–12 V portable power rails demanding ≤8.7 A continuous current.
Availability
IRF7433PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, industrial sensor node power rails, and portable medical device load control requiring stable component supply and long-term manufacturability.
Supply support for IRF7433PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensing, and connectivity solutions for automotive, industrial, and consumer markets.
The IRF7433PBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in space- and thermally-constrained battery-powered systems.
FAQ
What is the maximum continuous drain current for IRF7433PBF at 70°C ambient?
The maximum continuous drain current is -7.1 A at TA = 70°C with VGS = -4.5 V, derated linearly at 0.02 W/°C above 25°C ambient. This reflects thermal limitation of the SO-8 package, not silicon capability, and assumes mounting on a 1-inch square copper board per datasheet test condition.
Does IRF7433PBF require a gate resistor for stability in switching applications?
A gate resistor of 10–47 Ω is recommended to dampen ringing caused by gate-drain capacitance (Crss = 310 pF) and PCB trace inductance. Without it, overshoot exceeding ±8 V may trigger unintended turn-on or oscillation, especially when driven by low-impedance MCU pins at frequencies above 50 kHz.
Can IRF7433PBF be used in parallel with identical units for higher current handling?
Yes-its positive RDS(on) temperature coefficient (RDS(on) increases with junction temperature) enables inherent current sharing. Parallel operation requires matched layout symmetry, shared gate drive, and thermal coupling to ensure balanced conduction; tested configurations achieve ≤15% current imbalance at 15 A total load.
Is the body diode in IRF7433PBF suitable for reverse polarity protection?
No-the body diode conducts from source to drain (S→D), so it does not block reverse input voltage. For reverse polarity protection, IRF7433PBF must be placed on the high-side with source tied to input and drain to load, relying on MOSFET channel conduction-not the body diode-to pass forward current while blocking reverse voltage.
IRF7433PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 8.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1877 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7433PBF FAQ
1.How can I place an order for IRF7433PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7433PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7433PBF reliable?
The price and inventory of IRF7433PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7433PBF is usually 5 days.
3.What payment methods are accepted for IRF7433PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7433PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7433PBF?
IRF7433PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7433PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7433PBF?
For technical support, including IRF7433PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7433PBF requirements.
6.How does Aetrix verify that IRF7433PBF is sourced from the original manufacturer or authorized distributors?
All IRF7433PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7433PBF meets industry standards.
7.What is the process for return or replacement of IRF7433PBF?
All IRF7433PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7433PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7433PBF part is unused and in its original packaging.
Return procedure for IRF7433PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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