Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7433TRPBF

Name: IRF7433TRPBF
Brand: Infineon Technologies
SKU: IRF7433TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7433TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7433TRPBF.pdf

Description:: MOSFET P-CH 12V 8.9A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,474

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7433TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -12 V drain-source voltage, 24 mΩ R_DS(on) at V_GS = -4.5 V and I_D = -8.7 A, with ultra-low on-resistance optimized for battery disconnect and load switching in portable electronics.

For engineers reviewing the IRF7433TRPBF datasheet, IRF7433TRPBF pinout, IRF7433TRPBF application, or IRF7433TRPBF equivalent, key selection criteria include verified -12 V V_DS, gate threshold of -0.4 to -0.9 V, thermal resistance of 50 °C/W, body diode forward voltage of -1.2 V at -2.5 A, and SO-8 leadframe-enhanced thermal performance for high-density PCB layouts.

Technical Context

This device operates as a single P-channel power switch with integrated body diode, designed for low-voltage DC load control where reverse polarity protection and efficient on-state conduction are required. Its gate threshold voltage range (-0.4 to -0.9 V) enables direct logic-level drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The SO-8 package features a modified leadframe for improved thermal dissipation and supports multiple-die configurations. Electrical behavior is characterized by strong temperature stability of R_DS(on) (normalized to ~1.2× at 150 °C), fast switching (t_d(off) up to 408 ns), and low total gate charge (20 nC) enabling high-frequency PWM operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum reverse-biased drain-source voltage before breakdown; defines safe operating range in battery-powered systems.
R_DS(on)	24 mΩ @ V_GS = -4.5 V, I_D = -8.7 A - Low conduction loss enabling <100 mW power dissipation at 2 A load current.
I_D (continuous)	-8.9 A @ T_A = 25 °C - Sustained current capability under natural convection; derates to -7.1 A at 70 °C ambient.
V_GS(th)	-0.4 to -0.9 V - Ensures reliable turn-on with standard 3.3 V GPIO; avoids marginal switching near logic thresholds.
Q_g	20 nC - Total gate charge determines driver strength requirement; compatible with low-power MCU GPIOs when used with appropriate series resistance.
R_θJA	50 °C/W - Junction-to-ambient thermal resistance on 1-inch² copper board; sets maximum power budget for thermal design.
V_SD	-1.2 V @ I_S = -2.5 A - Forward voltage of integrated body diode; critical for reverse-current path in H-bridge or OR-ing applications.

Pinout & Package

IRF7433TRPBF uses the JEDEC MS-012AA-compliant SO-8 package with exposed drain pads on pins 1–3 and 5–8, gate on pin 4, and source on pins 6–7. The leadframe-modified construction enhances thermal transfer and supports multi-die integration.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 8	Drain (D)	High-current output node; electrically tied internally; requires thermal pad connection to PCB ground plane for heat sinking.
4	Gate (G)	Control input; sensitive to ESD; requires gate resistor (typically 10–100 Ω) to limit ringing and dV/dt-induced turn-on.
6, 7	Source (S)	Reference node for gate drive; connects to system ground or load return path; forms cathode of internal body diode.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	24 mΩ at -4.5 V gate drive - reduces conduction loss by >30% vs. legacy P-channel MOSFETs in same package.
Logic-level gate drive	V_GS(th) max -0.9 V - eliminates need for external level shifters when driven from 3.3 V microcontrollers.
Enhanced SO-8 thermal design	50 °C/W R_θJA - 20% lower junction-to-ambient resistance than standard SO-8, enabling higher continuous current in space-constrained designs.
Integrated body diode	V_SD = -1.2 V @ -2.5 A - supports bidirectional current flow in OR-ing and reverse-polarity protection circuits without external diodes.

Applications

Battery Protection Circuit

USB Port Power Switching

Use Scenario: Preventing reverse current flow during battery insertion or hot-swap events in Li-ion powered devices.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery-to-system power path; acts as ideal diode replacement.

Use Value: Eliminates 300–500 mV diode drop, preserving battery runtime and reducing thermal load on PCB.

Use Scenario: Enabling/disabling VBUS power delivery to downstream USB peripherals based on host policy or fault detection.

IC Role / Device Role / Timing Role: Load switch isolating USB 5 V rail; responds to enable signal within microseconds.

Use Value: Supports USB 2.0 compliance with <10 µs turn-off time and <100 µA quiescent current in off-state.

Power OR-ing Controller

Industrial Sensor Node Power Management

Use Scenario: Selecting between primary and backup power sources (e.g., main supply and supercapacitor) in always-on embedded systems.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing low-loss, bidirectional current path with automatic source selection.

Use Value: Achieves <50 mV forward voltage drop vs. >300 mV for Schottky diodes, improving efficiency in dual-rail redundancy schemes.

Use Scenario: Managing power sequencing and isolation for low-power sensors (e.g., temperature, humidity) in battery-operated IIoT nodes.

IC Role / Device Role / Timing Role: Load switch enabling/disabling sensor subsystems to extend battery life beyond 5 years.

Use Value: Leverages -0.4 V V_GS(th) min to ensure robust turn-on even as battery voltage drops to 2.8 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 22 mΩ @ -4.5 V but V_DS = -20 V; higher voltage rating increases cost and capacitance.	Better suited for 12–19 V industrial rails; over-spec'd for 5 V USB or 3.3 V logic systems.	Select if future-proofing for higher bus voltages or needing tighter R_DS(on) tolerance.
DMG2305UVT-7	R_DS(on) = 42 mΩ @ -4.5 V; 75% higher on-resistance; smaller SO-8 footprint but no exposed drain pads.	Acceptable for <1 A loads; insufficient thermal margin for sustained 5 A operation.	Choose only for cost-sensitive, low-current (<1.5 A) applications where board space is constrained.

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7433TRPBF delivers optimal balance of low R_DS(on), verified -12 V rating, and SO-8 thermal performance for 3.3/5 V battery management-making it the preferred choice for portable electronics requiring <5 A continuous switching with minimal BOM count.

Availability

IRF7433TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power switching, power OR-ing controllers, and industrial sensor node power management requiring stable component supply and long-term lifecycle support.

Supply support for IRF7433TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRF7433TRPBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in portable and battery-powered systems where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7433TRPBF supports -7.1 A continuous drain current at T_A = 70 °C with V_GS = -4.5 V, as specified in the Absolute Maximum Ratings table. This value assumes mounting on a 1-inch² copper board and accounts for linear derating (0.02 W/°C) above 25 °C ambient.

Can IRF7433TRPBF be driven directly from a 3.3 V microcontroller GPIO?

Yes. With a gate threshold voltage range of -0.4 V to -0.9 V, the IRF7433TRPBF fully turns on using a 3.3 V logic-high signal applied to the gate (V_GS = -3.3 V), delivering 24 mΩ R_DS(on). No level shifter is required, though a 10–47 Ω series gate resistor is recommended to suppress ringing.

Does IRF7433TRPBF include an integrated body diode, and what is its forward voltage?

Yes, it integrates a p-n junction body diode with a typical forward voltage of -1.2 V at -2.5 A and 25 °C. This diode conducts current from source to drain and is essential for reverse-current paths in OR-ing and battery back-up configurations.

What is the thermal resistance from junction to ambient, and how is it measured?

R_θJA is 50 °C/W, measured on a 1-inch² FR-4 board with 2 oz copper, per JEDEC JESD51-2. This value applies to natural convection cooling and serves as the baseline for thermal design; actual performance improves with larger copper areas or forced airflow.

IRF7433TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 8.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 8.7A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1877 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7433TRPBF FAQ

1.How can I place an order for IRF7433TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7433TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7433TRPBF reliable?

The price and inventory of IRF7433TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7433TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7433TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7433TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7433TRPBF?

IRF7433TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7433TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7433TRPBF?

For technical support, including IRF7433TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7433TRPBF requirements.

6.How does Aetrix verify that IRF7433TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7433TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7433TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7433TRPBF?

All IRF7433TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7433TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7433TRPBF part is unused and in its original packaging.

Return procedure for IRF7433TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…