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Infineon Technologies IRF7450PBF
- Part No.:
- IRF7450PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7450PBF.pdf
- Description:
- MOSFET N-CH 200V 2.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,147
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Product details
Overview
IRF7450PBF from Infineon Technologies (formerly International Rectifier) is a 200V, 2.5A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 0.17Ω RDS(on) at VGS = 10V, 26–39nC total gate charge, and fully characterized avalanche capability (EAS = 230mJ), enabling robust switching in compact power supplies.
For engineers reviewing the IRF7450PBF datasheet, IRF7450PBF pinout, IRF7450PBF application, or IRF7450PBF equivalent, key selection criteria include its low gate-to-drain charge (Qgd = 12–18nC), effective output capacitance (Coss,eff = 25pF), and SO-8 thermal performance (RθJA = 50°C/W) - all critical for optimizing efficiency and layout in isolated flyback and synchronous buck topologies.
Technical Context
This MOSFET employs planar silicon process with integrated body diode and is rated for continuous operation up to TJ = 150°C. Its gate threshold voltage (VGS(th) = 3.0–5.5V) ensures reliable turn-on with standard 5V or 10V logic-level drivers, while dV/dt immunity of 11V/ns supports stable operation in noisy SMPS environments.
The device delivers fully characterized dynamic parameters including Ciss = 940pF, Coss = 160pF (at VDS = 25V), and Crss = 33pF, enabling accurate snubber design and loss modeling per Application Note AN1001. Avalanche-rated (IAR = 2.5A, EAS = 230mJ) for unclamped inductive switching stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200V - Maximum drain-source blocking voltage; defines usable input range in 12–48V DC-DC primary-side switches. |
| RDS(on) max | 0.17Ω @ VGS = 10V - Conduction loss contributor; yields ≤0.64W I²R loss at 2.5A DC current. |
| Qg typ/max | 26/39nC - Total gate charge; determines driver strength requirement and switching transition time in hard-switched topologies. |
| Coss,eff | 25pF - Effective output capacitance over full VDS swing (0–160V); used directly in resonant timing and soft-switching loss calculations. |
| EAS | 230mJ - Single-pulse avalanche energy rating; enables safe operation during transient overloads without external clamping. |
| RθJA | 50°C/W - Junction-to-ambient thermal resistance on standard PCB; sets maximum continuous power dissipation at 2.5W (TA = 25°C). |
| trr / Qrr | 97–146ns / 350–525nC - Body diode reverse recovery specs; impacts cross-conduction loss and EMI in synchronous rectification. |
Pinout & Package
IRF7450PBF uses JEDEC-standard SO-8 (MS-012AA) surface-mount package with exposed drain pad for enhanced thermal conduction. Package dimensions: 4.90 × 6.00 × 1.75 mm (L × W × H), lead pitch 1.27 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 (Drain) | Power Drain Terminal (parallel-connected) | Seven pins tied internally to drain; provides low-inductance, high-current path and thermal interface to PCB copper pour. |
| 8 (Gate) | Control Input | High-impedance MOS gate requiring <250nA leakage; sensitive to ESD but compatible with standard CMOS/TTL drivers. |
| Source | Reference Node / Current Return | Source terminal is pin 8's adjacent pad (pin 8 is Gate; Source is internal connection to pins 1–7 substrate reference); requires Kelvin source routing for accurate gate drive referencing. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qgd/Qg ratio | ~46% (12–18nC / 26–39nC) - Reduces Miller-induced switching delay and improves controllability in high-dV/dt conditions. |
| Fully characterized Coss vs. VDS | 1100pF @ 1V → 66pF @ 160V - Enables precise dead-time optimization and ZVS boundary prediction in resonant converters. |
| Avalanche-rated operation | 230mJ single-pulse, 2.5A IAR - Eliminates need for external RCD clamp in low-power flyback designs with predictable inductive stress. |
| Lead-free (PbF) construction | RoHS-compliant, reflow-solderable up to 300°C for 10s - Supports automated assembly without lead contamination concerns. |
Applications
| AC-DC Adapter Primary Switch | Isolated Flyback Converter |
|---|---|
Use Scenario: 12–24V input, 5–12V output adapter delivering ≤15W with quasi-resonant control. IC Role / Device Role: Primary-side main switch handling 200V blocking and 2.5A peak current. Use Value: Low Coss,eff (25pF) reduces turn-on loss during valley switching; avalanche rating absorbs leakage inductance spikes without snubber. |
Use Scenario: 36–72V telecom input, 5V/3A output flyback with opto-coupled feedback. IC Role / Device Role: High-side switching element operating at 65–130kHz with self-driven synchronous rectification. Use Value: Fast trr (97ns) and low Qrr minimize body-diode conduction loss during synchronous FET dead time. |
| Synchronous Buck Converter High-Side | LED Driver Power Switch |
Use Scenario: 12V input, 3.3V/5A output point-of-load regulator using integrated controller. IC Role / Device Role: High-side MOSFET in 500kHz buck stage with bootstrap gate drive. Use Value: Low RDS(on) (0.17Ω) limits conduction loss to <4.3mW at 5A RMS; SO-8 footprint simplifies 2-layer PCB layout. |
Use Scenario: Constant-current LED driver for architectural lighting (24–48V bus, 350mA–700mA load). IC Role / Device Role: PWM-controlled current-switching element in buck-derived topology. Use Value: Tight VGS(th) tolerance (3.0–5.5V) ensures consistent turn-on across temperature; low gate charge enables clean 1–10kHz dimming edges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK60Z | 600V VDSS, 2A ID, RDS(on) = 3.5Ω - higher voltage rating but significantly higher on-resistance and slower switching. | Designed for universal-input offline SMPS (>300V AC), not optimized for low-voltage DC-DC where IRF7450PBF excels. | Select only when >400V blocking is required; avoid for 24–48V systems due to excessive conduction loss. |
| Si2302DS | 20V VDSS, 2.6A ID, RDS(on) = 0.075Ω - lower voltage, lower RDS(on), but no avalanche rating and SO-23 package. | Targeted at battery-powered load switches and low-voltage motor drivers, not high-voltage SMPS. | Use only in ≤20V systems; unsuitable for 200V applications due to catastrophic breakdown risk. |
Compared with STP2NK60Z and Si2302DS, IRF7450PBF uniquely balances 200V blocking, sub-0.2Ω RDS(on), and verified avalanche ruggedness - making it the only viable option among the three for 24–48V input DC-DC converters requiring both efficiency and fault tolerance.
Availability
IRF7450PBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, isolated flyback power supplies, and synchronous buck regulators requiring stable component supply, RoHS compliance, and proven thermal performance in SO-8 footprint.
Supply support for IRF7450PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
IRF7450PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in consumer and industrial power supplies - emphasizing low gate charge, fast recovery, and rugged avalanche behavior.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF7450PBF supports 2.0A continuous drain current at TA = 70°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package on standard FR-4 PCB; actual current capability increases with copper area and airflow.
Does IRF7450PBF have an integrated body diode, and what are its recovery characteristics?
Yes, IRF7450PBF includes a monolithic p-n junction body diode. Its reverse recovery time (trr) is 97–146ns and reverse recovery charge (Qrr) is 350–525nC at TJ = 25°C, IF = 1.5A, and di/dt = 100A/µs - values critical for minimizing shoot-through loss in synchronous rectification.
Can IRF7450PBF be driven directly by a 3.3V microcontroller GPIO?
No - its gate threshold voltage (VGS(th)) ranges from 3.0V to 5.5V, and full enhancement requires ≥10V for specified RDS(on). A 3.3V signal may partially turn on the device, causing excessive heating; a dedicated gate driver or level-shifting circuit is required for reliable operation.
What is the recommended PCB layout practice for thermal management?
Maximize copper area connected to pins 1–7 (drain) using multiple thermal vias to inner/ground planes. Maintain ≥0.5mm clearance between gate (pin 8) and drain traces to prevent coupling. Follow JEDEC MS-012AA footprint with 1.27mm pitch and ensure solder mask opening over drain pad for optimal heat transfer.
IRF7450PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 170mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 39 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 940 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7450PBF FAQ
1.How can I place an order for IRF7450PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7450PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7450PBF reliable?
The price and inventory of IRF7450PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7450PBF is usually 5 days.
3.What payment methods are accepted for IRF7450PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7450PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7450PBF?
IRF7450PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7450PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7450PBF?
For technical support, including IRF7450PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7450PBF requirements.
6.How does Aetrix verify that IRF7450PBF is sourced from the original manufacturer or authorized distributors?
All IRF7450PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7450PBF meets industry standards.
7.What is the process for return or replacement of IRF7450PBF?
All IRF7450PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7450PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7450PBF part is unused and in its original packaging.
Return procedure for IRF7450PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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