Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7450TR

Name: IRF7450TR
Brand: Infineon Technologies
SKU: IRF7450TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7450TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7450TR.pdf

Description:: MOSFET N-CH 200V 2.5A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,743

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7450TR from Infineon Technologies (formerly International Rectifier) is a 200 V, 2.5 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 0.17 Ω R_DS(on) at V_GS = 10 V, 26 nC total gate charge, and fully characterized avalanche capability (E_AS = 230 mJ), enabling robust switching in compact power supplies.

For engineers reviewing the IRF7450TR datasheet, IRF7450TR pinout, IRF7450TR application, or IRF7450TR equivalent, key selection criteria include its low gate-to-drain charge (Q_gd = 12–18 nC), effective output capacitance (C_oss,eff = 25 pF), and SO-8 thermal performance (R_θJA = 50 °C/W) - critical for optimizing efficiency and layout in isolated flyback and active-clamp forward topologies.

Technical Context

This MOSFET employs HEXFET® silicon technology with planar gate structure and optimized doping profile to achieve stable R_DS(on) over temperature (0.26 V/°C V(BR)_DSS tempco) and controlled dv/dt immunity (11 V/ns). Its body diode is fully specified for reverse recovery (t_rr = 97–146 ns, Q_rr = 350–525 nC) and avalanche-rated (I_AR = 2.5 A, E_AS = 230 mJ).

The device is characterized for dynamic operation at V_DS = 160 V, I_D = 1.5 A, R_G = 6.0 Ω, delivering t_d(on) = 10 ns, t_r = 3.0 ns, t_d(off) = 17 ns, and t_f = 18 ns. C_iss, C_oss, and C_rss are measured at 1 MHz with V_GS = 0 V, supporting accurate snubber and gate drive design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands up to 200 V drain-source blocking voltage before avalanche conduction begins.
R_DS(on) max	0.17 Ω @ V_GS = 10 V, I_D = 1.5 A - Determines conduction loss in continuous operation; impacts thermal design at 2.5 A DC load.
Q_g typ/max	26 / 39 nC - Defines gate driver current requirement and switching energy loss; lower Q_gd/Q_g ratio improves hard-switching efficiency.
E_AS	230 mJ - Specifies single-pulse unclamped inductive switching robustness; enables reliable operation without external snubbers in flyback designs.
R_θJA	50 °C/W - Junction-to-ambient thermal resistance on standard FR-4 PCB; sets maximum power dissipation limit (2.5 W at T_A = 25 °C).
t_rr	97–146 ns - Body diode reverse recovery time under di/dt = 100 A/µs; directly affects cross-conduction loss and EMI in synchronous rectification.
C_oss,eff	25 pF - Effective output capacitance over full V_DS swing (0–160 V); used to calculate turn-off energy loss and resonant timing in ZVS circuits.

Pinout & Package

IRF7450TR is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain pads on pins 1–4 and 6–8, gate on pin 5, and source on pins 7–8. Thermal pad is not electrically isolated and connects to drain potential.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 8	Drain (D)	High-current output node; tied to internal die drain metallization and thermal pad; requires low-inductance PCB copper pour for heat and EMI control.
5	Gate (G)	Control input; sensitive to ESD and ringing; requires gate resistor (6.0 Ω typical) to dampen oscillation and manage dV/dt-induced turn-on.
7, 8	Source (S)	Reference node for gate drive and current sensing; shared with drain terminals via internal bond wires - introduces source inductance affecting switching waveform fidelity.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	~46% (12/26 nC typ) - Reduces Miller-induced switching delay and improves controllability during hard switching transitions.
Fully characterized C_oss vs. V_DS	66 pF @ 160 V, 1100 pF @ 1 V - Enables precise calculation of turn-off loss and resonant tank behavior in LLC and QR flyback converters.
Specified avalanche energy	230 mJ single-pulse - Eliminates need for external clamping in moderate-energy inductive switching applications like auxiliary supplies.
Lead-free (PbF) construction	RoHS-compliant per JEDEC J-STD-020 - Supports reflow soldering profiles up to 300 °C (10 s), compatible with standard SMT assembly lines.
Body diode t_rr and Q_rr	97 ns / 350 nC min - Allows predictable dead-time setting and reduces shoot-through risk when used in synchronous buck or half-bridge configurations.

Applications

AC-DC Adapter Secondary Side

Isolated Flyback Power Supply

Use Scenario: 12 V/2 A output stage in universal-input (90–264 VAC) wall adapters for consumer electronics.

IC Role / Device Role: Primary-side switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: Low R_DS(on) minimizes conduction loss at light loads; SO-8 footprint supports compact transformer placement and thermal management on double-sided PCBs.

Use Scenario: 5 V/3 A isolated output in industrial IoT gateway power supply with reinforced insulation requirements.

IC Role / Device Role: Main switching element in quasi-resonant (QR) flyback controller reference design.

Use Value: Controlled dv/dt (11 V/ns) and low C_oss,eff reduce EMI generation; avalanche rating ensures reliability during line surge events.

Active-Clamp Forward Converter

DC-DC POL Module

Use Scenario: 48 V input to 12 V/5 A output in telecom base station intermediate bus architecture.

IC Role / Device Role: Main switch operating at 300 kHz with active-clamp reset circuit.

Use Value: Fast switching (t_f = 18 ns) and low Q_g enable high-frequency operation while maintaining <1% duty cycle loss margin.

Use Scenario: Point-of-load regulator in FPGA-based edge computing module requiring fast transient response.

IC Role / Device Role: High-side switch in discrete buck converter with external controller and ceramic output capacitors.

Use Value: Tight R_DS(on) tolerance (0.17 Ω max) and low gate charge ensure consistent efficiency across production lots and temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK60Z	600 V V_DSS, 2.5 A I_D, R_DS(on) = 4.5 Ω - higher voltage rating but significantly higher on-resistance.	Designed for offline SMPS primary side; unsuitable for 200 V-class secondary-side or POL use due to excessive conduction loss.	Select only if system requires >400 V blocking; avoid for 200 V applications where efficiency and thermal headroom are critical.
SiHFL210	200 V V_DSS, 2.5 A I_D, R_DS(on) = 0.18 Ω, Q_g = 22 nC - slightly higher R_DS(on), lower gate charge, same SO-8 package.	Optimized for ultra-low Q_g in high-frequency PWM; lacks published avalanche energy rating and detailed C_oss curves.	Prefer for >500 kHz fixed-frequency designs where gate drive loss dominates; retain IRF7450TR when avalanche robustness or C_oss-based design validation is required.

Compared with STP2NK60Z and SiHFL210, IRF7450TR offers the best balance of low R_DS(on), verified avalanche capability, and comprehensive dynamic capacitance data - making it uniquely suitable for cost-sensitive, thermally constrained 200 V DC-DC converters where design margin and manufacturability are prioritized.

Availability

IRF7450TR is available at Aetrix Electronics and suitable for AC-DC adapters, isolated flyback power supplies, and point-of-load (POL) modules requiring stable component supply, lead-free compliance, and SO-8 thermal performance.

Supply support for IRF7450TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7450TR belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in consumer and industrial off-line and DC-DC power conversion systems.

FAQ

What is the maximum continuous drain current for IRF7450TR at 70°C ambient?

The maximum continuous drain current is 2.0 A at T_A = 70°C with V_GS = 10 V, derated from 2.5 A at 25°C using the linear derating factor of 0.02 W/°C and R_θJA = 50 °C/W. This reflects real-world thermal limits on standard FR-4 PCBs without forced air or heatsinking.

Does IRF7450TR have an integrated body diode, and is it rated for reverse recovery?

Yes, IRF7450TR includes a monolithic p-n junction body diode with fully specified reverse recovery characteristics: t_rr = 97–146 ns and Q_rr = 350–525 nC at T_J = 25°C, I_F = 1.5 A, and di/dt = 100 A/µs. These values are measured and guaranteed per datasheet test conditions.

Can IRF7450TR be used in avalanche mode, and what is its single-pulse energy rating?

Yes, IRF7450TR is fully characterized for unclamped inductive switching: E_AS = 230 mJ at I_AS = 2.5 A, L = 73 mH, and starting T_J = 25°C. This rating is validated per JEDEC JESD24-11 and supports reliable operation in flyback snubberless designs without external clamping.

What is the gate threshold voltage range, and how does it affect drive compatibility?

V_GS(th) is specified from 3.0 V to 5.5 V at I_D = 250 µA, ensuring reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers. The wide range accommodates process variation while maintaining sufficient noise margin against spurious turn-on in noisy power environments.

IRF7450TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 940 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7450TR FAQ

1.How can I place an order for IRF7450TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7450TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7450TR reliable?

The price and inventory of IRF7450TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7450TR is usually 5 days.

3.What payment methods are accepted for IRF7450TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7450TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7450TR?

IRF7450TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7450TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7450TR?

For technical support, including IRF7450TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7450TR requirements.

6.How does Aetrix verify that IRF7450TR is sourced from the original manufacturer or authorized distributors?

All IRF7450TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7450TR meets industry standards.

7.What is the process for return or replacement of IRF7450TR?

All IRF7450TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7450TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7450TR part is unused and in its original packaging.

Return procedure for IRF7450TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.