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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7450TRPBF

Name: IRF7450TRPBF
Brand: Infineon Technologies
SKU: IRF7450TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7450TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7450TRPBF.pdf

Description:: MOSFET N-CH 200V 2.5A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7450TRPBF from Infineon Technologies (formerly International Rectifier) is a 200V, 2.5A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 0.17Ω R_DS(on) at V_GS = 10V, 26–39nC total gate charge, and fully characterized avalanche capability (230mJ E_AS). Its low Q_gd/Q_gs ratio and 11V/ns dv/dt rating support efficient hard-switching in offline SMPS.

For engineers reviewing the IRF7450TRPBF datasheet, IRF7450TRPBF pinout, IRF7450TRPBF application, or IRF7450TRPBF equivalent, key selection criteria include its SO-8 thermal performance (R_θJA = 50°C/W), body diode recovery (trr = 97–146ns), and gate drive compatibility with 10V logic-level controllers in compact power stages.

Technical Context

This MOSFET employs HEXFET® silicon technology with planar vertical DMOS structure, enabling stable R_DS(on) over temperature (0.26V/°C V(BR)_DSS tempco) and robust unclamped inductive switching. Its SO-8 leadframe design provides low-inductance source connection and enhanced thermal coupling to PCB copper.

The device integrates a fast, low-Q_rr body diode (Q_rr = 350–525nC, V_SD = 1.3V @ 1.5A), and its C_oss is specified across multiple V_DS points (1100pF @ 1V, 66pF @ 160V), supporting accurate snubber and resonant circuit modeling per Application Note AN1001.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200V - supports 170V AC rectified input with 15% margin in universal-input offline converters
R_DS(on) max	0.17Ω @ V_GS = 10V - enables ≤0.6W conduction loss at 2.5A continuous drain current
Q_g typ/max	26/39nC - determines gate driver current requirement (≥2.6mA avg for 1MHz switching)
E_AS	230mJ - allows safe operation under 2.5A inductive turn-off without external clamping
C_oss eff.	25pF - defines hard-switching energy loss (E_sw ≈ 0.5 × C_oss × V_DS²) at 160V bus
trr / Q_rr	97–146ns / 350–525nC - sets minimum dead-time and reverse recovery loss in synchronous buck topologies
R_θJA	50°C/W - requires ≥1in² 2oz copper pad for 2.5W dissipation at T_A = 70°C

Pinout & Package

IRF7450TRPBF is housed in a standard SO-8 (MS-012AA) surface-mount package with exposed drain paddle for thermal enhancement. Pin 1 is gate (G), pins 2–4 and 6–8 are parallel-connected drains (D), and pins 5 and 7 are sources (S). The package complies with JEDEC MS-012AA outline and supports lead-free reflow per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	High-impedance control terminal requiring <100nA leakage current handling
2, 3, 4, 6, 7, 8	Drain (D)	Parallel-connected high-voltage power terminals tied to switch-node voltage
5, 7	Source (S)	Low-side return path; pins 5 and 7 provide dual-source routing for reduced loop inductance

Key Features

Feature	Design Value
Low Q_gd/Q_gs ratio	12–18nC / 6–9nC = ~2.0 - reduces Miller-induced switching delay and improves dV/dt immunity
Fully characterized C_oss	Specified at 1V, 25V, and 160V - enables precise calculation of turn-off loss across full operating range
Lead-free and RoHS-compliant	Meets EU Directive 2011/65/EU - suitable for consumer electronics with no exemption required
Enhanced avalanche ruggedness	230mJ single-pulse rating at 2.5A - eliminates need for external RCD clamp in flyback snubberless designs

Applications

AC-DC Adapter Power Stage

USB-C PD Fast Charger Primary Switch

Use Scenario: 65W universal-input offline flyback converter operating at 100kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer.

Use Value: 0.17Ω R_DS(on) limits conduction loss to 1.06W at 2.5A peak, while 230mJ E_AS ensures reliable operation during line surges without snubber.

Use Scenario: 100W GaN-assisted active-clamp forward converter with 200kHz switching.

IC Role / Device Role / Timing Role: Synchronous rectifier driver FET in secondary-side control IC interface.

Use Value: Low 26nC Q_g enables clean 10V gate drive from low-power controller, minimizing propagation delay mismatch in dual-FET configurations.

Industrial PLC Power Supply

LED Driver Constant-Current Stage

Use Scenario: 24V input, 5V/3A isolated buck-derived supply with 85°C ambient requirement.

IC Role / Device Role / Timing Role: Main switching element in primary-side PWM-controlled forward topology.

Use Value: R_θJA = 50°C/W and SO-8 thermal pad allow 2.5W dissipation on 1in² copper, meeting industrial thermal derating targets.

Use Scenario: 48V input, 36V/0.7A constant-current LED string driver with analog dimming.

IC Role / Device Role / Timing Role: High-side current-sense FET in linear+switching hybrid regulation stage.

Use Value: 1.3V V_SD body diode forward drop minimizes reverse recovery loss during PWM dimming transitions, reducing audible noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK60ZFP	600V V_DSS, 2.5A, 3.3Ω R_DS(on), TO-92 package	Higher voltage rating but 20× higher R_DS(on); unsuitable for <200V high-efficiency SMPS	Select only if 600V isolation and through-hole mounting are mandatory
DMN3025LSD-13	30V V_DSS, 6.5A, 25mΩ R_DS(on), SO-8 package	Lower voltage rating precludes use in offline AC-DC; better for 12V/24V DC-DC	Prefer for low-voltage, high-current synchronous rectification where V_DSS ≤ 30V suffices

Compared with STP2NK60ZFP and DMN3025LSD-13, IRF7450TRPBF uniquely balances 200V rating, SO-8 thermal performance, and sub-0.2Ω R_DS(on) - making it the only viable choice for compact, high-frequency 100–200V primary-side switching where both voltage margin and conduction efficiency matter.

Availability

IRF7450TRPBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, offline AC-DC adapters, and industrial PLC power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRF7450TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

The IRF7450TRPBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability switching in consumer and industrial offline power conversion systems.

FAQ

Is IRF7450TRPBF suitable for gate driving with 5V microcontrollers?

No - its gate threshold voltage (V_GS(th)) ranges from 3.0V to 5.5V, and R_DS(on) is only guaranteed at V_GS = 10V. Driving with 5V risks incomplete turn-on and excessive conduction loss. A dedicated 10V gate driver or level-shifter is required for reliable operation.

What is the maximum continuous drain current at 100°C ambient temperature?

At T_A = 100°C, the SO-8 package's thermal limit restricts continuous I_D to approximately 1.25A. This is derived from P_D = 2.5W at 25°C, linear derating factor 0.02W/°C, and R_θJA = 50°C/W: P_D(100°C) = 2.5 − 0.02 × 75 = 1.0W → I_D = √(1.0 / 0.17) ≈ 2.4A, but package current rating drops to 1.25A per SO-8 thermal constraints.

Does IRF7450TRPBF have integrated ESD protection on the gate?

No - the datasheet does not specify gate ESD protection diodes. External 10Ω gate resistor and 12V Zener clamp between gate and source are recommended to prevent damage from human-body-model (HBM) discharges during handling or layout.

Can IRF7450TRPBF replace IRF740 in existing designs?

No - IRF740 is a 400V, 10A TO-220 device with 0.55Ω R_DS(on). IRF7450TRPBF has half the voltage rating and one-quarter the current capacity. Direct replacement would cause catastrophic failure under IRF740's typical operating conditions; redesign of gate drive, heatsinking, and layout is mandatory.

IRF7450TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 940 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7450TRPBF FAQ

1.How can I place an order for IRF7450TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7450TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7450TRPBF reliable?

The price and inventory of IRF7450TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7450TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7450TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7450TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7450TRPBF?

IRF7450TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7450TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7450TRPBF?

For technical support, including IRF7450TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7450TRPBF requirements.

6.How does Aetrix verify that IRF7450TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7450TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7450TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7450TRPBF?

All IRF7450TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7450TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7450TRPBF part is unused and in its original packaging.

Return procedure for IRF7450TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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