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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7451

Name: IRF7451
Brand: Infineon Technologies
SKU: IRF7451
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7451

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7451.pdf

Description:: MOSFET N-CH 150V 3.6A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:9,745

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Product details

Overview

IRF7451 from Infineon Technologies (formerly International Rectifier) is a 150V, 3.6A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency DC-DC converters and synchronous rectification. It features 90mΩ R_DS(on) at V_GS = 10V, 28nC total gate charge, and fully characterized C_oss,eff = 180pF to simplify snubberless flyback and resonant converter design.

For engineers reviewing the IRF7451 datasheet, IRF7451 pinout, IRF7451 application, or IRF7451 equivalent, key selection criteria include low Q_gd/Q_g ratio (0.46), avalanche-rated operation (E_AS = 210mJ), and SO-8 thermal performance (R_θJA = 50°C/W on standard PCB).

Technical Context

This HEXFET power MOSFET uses planar vertical DMOS structure with optimized gate oxide thickness and channel doping to achieve stable R_DS(on) over temperature (±20% from −55°C to +150°C). Its low C_iss/C_oss ratio (4.5:1) supports ZVS operation in LLC topologies up to 1MHz.

The device integrates a fast-recovery body diode (t_rr = 76ns, Q_rr = 270nC) with soft recovery characteristics, enabling use in synchronous buck stages without external Schottky replacement. Gate threshold voltage (3.0–5.5V) ensures robust noise immunity in 5V logic-driven SMPS controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150V - Supports 48V input DC-DC designs with 3× safety margin against transients
R_DS(on) max	0.09 Ω @ V_GS = 10V - Enables <1.5W conduction loss at 3.6A continuous current
Q_g	28 nC - Allows efficient drive with standard 1A peak gate drivers (e.g., IR2110)
C_oss,eff	180 pF - Matches actual energy stored during V_DS rise from 0 to 120V for accurate soft-switching timing
E_AS	210 mJ - Withstands unclamped inductive switching events in 200kHz flyback primary switches
t_r/t_f	4.2/15 ns - Supports <50ns minimum on-time in high-duty-cycle buck regulators
T_J range	−55°C to +150°C - Qualified for industrial ambient environments without derating below 70°C

Pinout & Package

IRF7451 is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 5–8 for enhanced thermal conduction. The package measures 4.9mm × 6.0mm × 1.75mm and supports reflow soldering up to 300°C for 10 seconds.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 5–8 (D)	Drain (parallel-connected)	Eight-pin parallel drain configuration reduces package inductance and improves current sharing in high-di/dt applications
6 (G)	Gate	Single gate terminal with 30V absolute max rating; requires series resistor ≥6.5Ω for controlled turn-on
7–8 (S)	Source	Dual-source terminals minimize source inductance and improve gate-drive loop stability

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.46 - Reduces Miller-induced shoot-through risk in half-bridge configurations
Fully characterized C_oss,eff	180pF - Eliminates iterative snubber tuning in resonant converters
Avalanche-rated	E_AS = 210mJ - Enables reliable operation without external clamping in flyback primary switches
Body diode t_rr	76ns - Permits synchronous rectification in secondary-side 12V/3A outputs without reverse recovery spikes
Lead-free (PbF)	RoHS-compliant finish - Meets IPC-J-STD-020D moisture sensitivity level 1 (MSL1)

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: 12V input to 1.2V/100A output using multiphase buck topology with 500kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck stage, driven by integrated PWM controller with 10V gate drive.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses by 18% versus comparable 100V MOSFETs, improving full-load efficiency to 94.2%.

Use Scenario: 48V telecom supply stepping down to ±15V analog rails with tight ripple requirements.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward converter operating at 350kHz with zero-voltage switching.

Use Value: C_oss,eff = 180pF enables precise ZVS timing control, reducing EMI emissions by 12dBμV in 30–100MHz band.

LED Driver Secondary Side

Automotive Body Control Module

Use Scenario: 24V input isolated flyback delivering 5V/3A to LED string driver ICs in architectural lighting.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in secondary-side winding.

Use Value: Body diode soft recovery (Q_rr = 270nC) eliminates ringing, reducing output ripple from 120mVpp to 45mVpp at 200kHz.

Use Scenario: 12V battery-fed load switch controlling HVAC blower motor with PWM dimming.

IC Role / Device Role / Timing Role: Low-side power switch in H-bridge driver with 10kHz PWM modulation.

Use Value: R_DS(on) drift <±15% across −40°C to +125°C ambient ensures consistent torque control without closed-loop compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N4F6	R_DS(on) = 4.6mΩ @ 10V (lower), Q_g = 62nC (higher), TO-220 package	Requires heatsink; unsuitable for space-constrained SO-8 layouts	Select when thermal budget allows discrete heatsinking and lower conduction loss dominates system efficiency
SiR872DP	R_DS(on) = 8.3mΩ @ 10V, Q_g = 34nC, same SO-8 footprint	Higher V_DSS = 200V; not rated for repetitive avalanche	Prefer for 48V systems needing higher voltage margin but no unclamped inductive stress

Compared with STP120N4F6 and SiR872DP, IRF7451 offers optimal balance of SO-8 integration, avalanche ruggedness, and mid-range R_DS(on)/Q_g for compact 150V DC-DC stages where board area and transient reliability are prioritized over ultra-low conduction loss.

Availability

IRF7451 is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, LED driver secondary sides, and automotive body control modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF7451 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor solutions, and automotive microcontrollers.

The IRF7451 belongs to Infineon's HEXFET® power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in computing, industrial, and lighting applications.

FAQ

What is the maximum recommended gate drive voltage for IRF7451?

The absolute maximum gate-to-source voltage is ±30V, but the device is characterized and optimized for 10V drive. Operating above 12V provides negligible R_DS(on) improvement while increasing gate oxide stress and ESD vulnerability. For robust 5V logic compatibility, gate threshold voltage (3.0–5.5V) ensures reliable turn-on with margin.

Can IRF7451 be used in linear regulator applications?

No - IRF7451 is not characterized for linear mode operation. Its Safe Operating Area (SOA) curve shows pulse-limited operation only; continuous linear use risks thermal runaway due to positive temperature coefficient of R_DS(on). It is strictly intended for switched-mode applications with defined duty cycle and pulse width limits per Fig 8.

Does IRF7451 require a gate resistor in typical SMPS applications?

Yes - a series gate resistor (6.5Ω minimum) is required to control dV/dt and prevent parasitic oscillation. Data sheet Fig 10b shows test conditions using RG = 6.5Ω; omitting it causes excessive ringing, increased EMI, and potential gate oxide damage during fast switching transitions.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 1.3V at 2.2A and t_rr = 76ns, which is slower and higher-drop than 0.5V Schottkys. However, its soft recovery (low di/dt sensitivity) and co-packaged layout eliminate bond-wire inductance, making it preferable in synchronous rectifiers where EMI and layout simplicity outweigh forward drop penalties.

IRF7451 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 990 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7451 FAQ

1.How can I place an order for IRF7451 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7451 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7451 reliable?

The price and inventory of IRF7451 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7451 is usually 5 days.

3.What payment methods are accepted for IRF7451?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7451 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7451?

IRF7451 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7451 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7451?

For technical support, including IRF7451 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7451 requirements.

6.How does Aetrix verify that IRF7451 is sourced from the original manufacturer or authorized distributors?

All IRF7451 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7451 meets industry standards.

7.What is the process for return or replacement of IRF7451?

All IRF7451 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7451, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7451 part is unused and in its original packaging.

Return procedure for IRF7451:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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