My Inquiry
My Account
Infineon Technologies IRF7451PBF
- Part No.:
- IRF7451PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7451PBF.pdf
- Description:
- MOSFET N-CH 150V 3.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,882
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7451PBF from Infineon Technologies (formerly International Rectifier) is a 150V, 3.6A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency DC-DC converters and synchronous rectification. It features 90 mΩ RDS(on) at VGS = 10 V, 28 nC total gate charge, and fully characterized Coss,eff = 180 pF to simplify snubberless flyback and LLC design.
For engineers reviewing the IRF7451PBF datasheet, IRF7451PBF pinout, IRF7451PBF application, or IRF7451PBF equivalent, key selection criteria include avalanche energy rating (210 mJ), diode reverse recovery performance (Qrr = 270–400 nC), and thermal resistance (RθJA = 50 °C/W on standard PCB).
Technical Context
This HEXFET power MOSFET employs planar stripe cell structure with optimized gate oxide thickness and channel doping to achieve low Qgd/Qg ratio (13/28 nC typical), enabling fast switching with reduced Miller-induced shoot-through risk in half-bridge topologies. Its body diode is rated for 2.2 A continuous source current and exhibits 76–110 ns trr under 100 A/µs di/dt.
The device is characterized across temperature for RDS(on) drift (0.19 V/°C dV(BR)DSS/dTJ) and normalized on-resistance (2.5× increase from 25°C to 150°C), supporting robust thermal design in enclosed SMPS environments. Avalanche capability is validated per unclamped inductive test (EAS = 210 mJ, IAS = 3.6 A).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - supports 120 V input DC-DC stages with 25% margin against transients |
| RDS(on) max | 90 mΩ @ VGS = 10 V - enables ≤1.2 W conduction loss at 3.6 A in compact SO-8 footprint |
| Qg | 28–41 nC - determines gate driver current requirement (~1.4 A peak for 20 ns rise time) |
| Coss,eff | 180 pF - used directly in resonant timing calculations for ZVS/ZCS soft-switching designs |
| EAS | 210 mJ - sustains single-pulse inductive energy without failure in synchronous buck output stage |
| trr / Qrr | 76–110 ns / 270–400 nC - defines minimum dead-time setting to avoid cross-conduction in synchronous rectifiers |
Pinout & Package
IRF7451PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and supports reflow soldering up to 300 °C for 10 s.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, 6–8 (D) | Drain (common connection) | Internally paralleled for low-inductance, high-current drain path; connects to PCB copper pour for thermal relief |
| 5 (G) | Gate | High-impedance control terminal requiring <100 nA leakage; sensitive to ESD (±30 V absolute max) |
| 7–8 (S) | Source | Reference node for gate drive; tied to power ground plane; carries full load current and body diode reverse recovery charge |
Key Features
| Feature | Design Value |
|---|---|
| Low Qgd/Qg ratio | 0.46 typical - reduces Miller plateau duration and improves hard-switching efficiency above 300 kHz |
| Fully characterized Coss,eff | 180 pF - replaces complex voltage-dependent Coss modeling with single-value timing calculation for resonant converters |
| Avalanche-rated construction | 210 mJ single-pulse EAS - eliminates need for external clamping in non-isolated buck/boost during overload or startup |
| Lead-free and RoHS-compliant | Pb-free plating with matte tin finish - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life |
Applications
| Server VRM Output Stage | Industrial PLC Power Supply |
|---|---|
Use Scenario: High-density 12 V → 1.2 V point-of-load converter delivering 30 A using dual-phase synchronous buck topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz with 100 ns dead time. Use Value: 90 mΩ RDS(on) and 28 nC Qg minimize both conduction loss and gate drive power, improving full-load efficiency by ≥0.8% vs. legacy 120 mΩ parts. | Use Scenario: 24 V input isolated flyback supplying 5 V/2 A for logic and I/O modules in harsh industrial environments. IC Role / Device Role / Timing Role: Primary-side switch with self-driven synchronous rectification on secondary side. Use Value: 150 V VDSS and 210 mJ EAS withstand reflected transients and line surges without snubber, reducing BOM count by one TVS and two resistors. |
| USB-C PD Adapter | Automotive Infotainment DC-DC |
Use Scenario: 90 W USB-C PD adapter using active-clamp forward topology with 100 kHz switching frequency. IC Role / Device Role / Timing Role: Clamp switch handling bidirectional energy transfer during reset phase. Use Value: Low Coss,eff (180 pF) ensures predictable clamp timing and minimal voltage overshoot during energy recycling. | Use Scenario: 12 V → 3.3 V/5 V dual-output buck converter powering MCU, display, and CAN transceivers in automotive head unit. IC Role / Device Role / Timing Role: High-efficiency, AEC-Q200–compatible power switch operating at 2.1 MHz. Use Value: Verified 150°C TJ operation and 0.19 V/°C breakdown coefficient enable stable regulation across -40°C to +125°C ambient without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK150ZFP | 1500 V VDSS, 10 A ID, TO-220FP package, higher RDS(on) (0.3 Ω) | Designed for high-voltage PFC front-end, not DC-DC switching stages | Select only when >1 kV blocking and through-hole mounting are required |
| SiHFL110-GE3 | 100 V VDSS, 4.5 A ID, 65 mΩ RDS(on), same SO-8 footprint | Limited to ≤48 V input systems; lower avalanche rating (120 mJ) | Prefer for 24–48 V telecom supplies where lower VDSS suffices and lower RDS(on) is critical |
Compared with STP10NK150ZFP and SiHFL110-GE3, IRF7451PBF uniquely balances 150 V rating, SO-8 thermal performance, and sub-100 mΩ on-resistance-making it optimal for space-constrained, medium-voltage DC-DC converters where board area and thermal management are prioritized over ultra-high voltage tolerance or lowest possible RDS(on).
Availability
IRF7451PBF is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, USB-C PD adapters, and automotive infotainment DC-DC converters requiring stable component supply and long-term manufacturability.
Supply support for IRF7451PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
The IRF7451PBF belongs to Infineon's HEXFET® power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching power supplies in consumer, computing, and industrial markets.
FAQ
Is IRF7451PBF suitable for synchronous rectification in a 12 V input buck converter?
Yes. With its 90 mΩ RDS(on), low Qrr (270–400 nC), and fast trr (76–110 ns), IRF7451PBF supports synchronous rectification up to 1 MHz in 12 V input buck converters. Its SO-8 package provides adequate thermal dissipation for ≤3.6 A continuous output current when mounted on ≥1 in² 2-oz copper.
What is the maximum recommended gate resistor for hard-switching at 500 kHz?
A 6.5 Ω gate resistor is validated in the datasheet for td(off) = 17 ns and tf = 15 ns at 500 kHz. For reliable operation, use RG between 4.7 Ω and 10 Ω to balance switching speed against ringing and EMI; values below 4.7 Ω risk excessive gate current (>2 A peak) and overshoot.
Does IRF7451PBF have built-in ESD protection on the gate?
No. The gate oxide is unprotected-absolute maximum VGS is ±30 V, and gate leakage exceeds 100 nA beyond ±20 V. External gate protection (e.g., 12 V Zener clamp) is mandatory in systems with hot-plug, cable discharge, or noisy gate drive paths.
Can IRF7451PBF replace IRF7413 in an existing design?
Yes, with verification. Both are SO-8 N-channel MOSFETs, but IRF7451PBF has higher VDSS (150 V vs. 40 V), lower RDS(on) (90 mΩ vs. 55 mΩ), and different Qg (28–41 nC vs. 17–25 nC). Gate drive timing and layout must be rechecked-especially dv/dt immunity and Miller-induced turn-on risk at higher bus voltages.
IRF7451PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 990 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7451PBF FAQ
1.How can I place an order for IRF7451PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7451PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7451PBF reliable?
The price and inventory of IRF7451PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7451PBF is usually 5 days.
3.What payment methods are accepted for IRF7451PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7451PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7451PBF?
IRF7451PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7451PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7451PBF?
For technical support, including IRF7451PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7451PBF requirements.
6.How does Aetrix verify that IRF7451PBF is sourced from the original manufacturer or authorized distributors?
All IRF7451PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7451PBF meets industry standards.
7.What is the process for return or replacement of IRF7451PBF?
All IRF7451PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7451PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7451PBF part is unused and in its original packaging.
Return procedure for IRF7451PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7451PBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
