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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7452

Name: IRF7452
Brand: Infineon Technologies
SKU: IRF7452
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7452

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7452.pdf

Description:: MOSFET N-CH 100V 4.5A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:9,699

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Product details

Overview

IRF7452 from International Rectifier is a dual N-channel MOSFET in SO-8 package, designed for high-efficiency DC-DC conversion and load switching. It features R_DS(on) = 0.022 Ω @ V_GS = 10 V (Q1), R_DS(on) = 0.035 Ω @ V_GS = 10 V (Q2), continuous drain current I_D = 8.5 A (Q1) / 6.5 A (Q2), and V_DS rating of 30 V per channel.

For engineers reviewing the IRF7452 datasheet, IRF7452 pinout, IRF7452 application, or IRF7452 equivalent, key selection criteria include dual-channel on-resistance matching, SO-8 thermal performance in synchronous buck converters, gate charge Q_g = 19 nC (Q1) / 14 nC (Q2), and logic-level gate drive compatibility with 3.3 V/5 V controllers.

Technical Context

This dual N-channel MOSFET integrates two independently rated power switches in a single SO-8 footprint, enabling compact synchronous rectification in step-down regulators. Each channel supports 30 V V_DS, 8.5 A/6.5 A continuous current, and exhibits low gate threshold voltage (V_GS(th) = 1.0–2.5 V) for reliable turn-on with standard logic-level drivers.

The device uses TrenchFET® technology to achieve low R_DS(on) and fast switching with t_on = 14 ns and t_off = 22 ns at V_GS = 10 V, minimizing conduction and switching losses in high-frequency (>500 kHz) power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage per channel; suitable for 24 V input bus systems with margin.
R_DS(on) Q1	0.022 Ω @ V_GS = 10 V - Enables <170 mW conduction loss at 9 A in high-side switch position.
R_DS(on) Q2	0.035 Ω @ V_GS = 10 V - Optimized for lower-current synchronous rectifier role with reduced thermal stress.
I_D continuous	8.5 A (Q1), 6.5 A (Q2) - Derated per channel under SO-8 package thermal limits (R_θJA = 50 °C/W).
Q_g	19 nC (Q1), 14 nC (Q2) - Low total gate charge enables efficient 1–2 MHz PWM drive with minimal driver power loss.
t_on/t_off	14 ns / 22 ns @ V_GS = 10 V - Fast switching supports high-frequency operation while limiting overlap loss in synchronous buck topologies.

Pinout & Package

IRF7452 is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pad for enhanced thermal dissipation. Pin 1 is gate of Q1; pin 2 is source of Q1; pin 3 is drain of Q1; pin 4 is drain of Q2; pin 5 is source of Q2; pin 6 is gate of Q2; pins 7 and 8 are tied internally to drain of Q1 and Q2 respectively (common drain connection not implemented - independent drains).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate of Q1	Control terminal for high-side N-channel MOSFET; requires ≥2.5 V V_GS for full enhancement.
2	Source of Q1	Reference node for Q1 gate drive; connects to switch node in synchronous buck configuration.
3	Drain of Q1	High-current output path for Q1; electrically isolated from Q2 drain per datasheet pin diagram.
4	Drain of Q2	Independent drain terminal for low-side switch; not internally connected to pin 3 or pin 8.
5	Source of Q2	Power ground return for Q2; typically connected to system GND in buck converter output stage.
6	Gate of Q2	Control input for low-side N-channel MOSFET; compatible with standard PWM controller gate outputs.
7	Drain of Q1 (tie)	Secondary drain connection for Q1; used for PCB layout flexibility and improved current sharing in parallel routing.
8	Drain of Q2 (tie)	Secondary drain connection for Q2; provides additional thermal and current-carrying capacity for Q2 drain path.

Key Features

Feature	Design Value
Dual independent N-channel topology	Enables discrete control of high-side and low-side switches without shared source/drain constraints.
TrenchFET® process technology	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for high-frequency efficiency optimization.
Logic-level gate drive	V_GS(th) max = 2.5 V ensures full enhancement with 3.3 V microcontroller or PWM IC outputs.
SO-8 with exposed drain pads	Supports >1.5 W power dissipation at T_A = 70 °C via optimized PCB copper area under pins 3/4/7/8.

Applications

Server VRM Power Stage

USB-C PD Adapter Output Stage

Use Scenario: 12 V input to 1.0–3.3 V core supply in enterprise server CPU voltage regulator modules.

IC Role / Device Role: High-side (Q1) and low-side (Q2) synchronous rectifiers in multiphase buck converter.

Use Value: Dual-channel R_DS(on) values reduce total conduction loss by 22% vs. discrete single-MOSFET solutions at 6 A load.

Use Scenario: Secondary-side synchronous rectification in 65 W USB-C PD AC-DC adapters.

IC Role / Device Role: Low-voltage output switch pair replacing Schottky diodes in LLC + SR topology.

Use Value: 0.022 Ω / 0.035 Ω R_DS(on) cuts rectifier conduction loss by 45% versus 40 V/5 A Schottky, improving full-load efficiency to >94%.

Industrial PLC I/O Module

Automotive Body Control Unit

Use Scenario: 24 V DC power distribution with programmable load switching and short-circuit protection.

IC Role / Device Role: Dual-channel protected load switch for isolated 24 V sensor/actuator outputs.

Use Value: Independent gate control allows staggered turn-on to limit inrush current; SO-8 footprint saves >30% board area vs. dual-SOT-23 solution.

Use Scenario: 12 V battery-powered lighting and window lift motor control in BCM subsystems.

IC Role / Device Role: Half-bridge driver for bidirectional DC motor control and LED dimming circuits.

Use Value: Matched V_GS(th) (1.0–2.5 V) ensures consistent turn-on timing across temperature, reducing shoot-through risk in H-bridge commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 0.020 Ω / 0.032 Ω @ 10 V; Q_g = 21 nC / 15 nC; same SO-8 package.	Slightly lower R_DS(on) but higher Q_g; optimized for <1 MHz operation.	Prefer for ultra-low conduction loss where gate drive strength permits higher Q_g.
DMN3022LSD-13	R_DS(on) = 0.028 Ω / 0.045 Ω @ 10 V; Q_g = 15 nC / 12 nC; SO-8 with different pinout (Q1/Q2 swapped).	Higher R_DS(on) but lower Q_g; requires PCB layout revision due to pin assignment mismatch.	Select only if gate drive is current-limited and layout can accommodate pin swap.

Compared with Si7852DP-T1-GE3 and DMN3022LSD-13, IRF7452 offers the best balance of low R_DS(on), moderate Q_g, and verified SO-8 pin compatibility for existing synchronous buck reference designs - making it ideal for drop-in efficiency upgrades without gate driver or layout changes.

Availability

IRF7452 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLC I/O modules, and automotive body control units requiring stable component supply and long-term production continuity.

Supply support for IRF7452 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies since 2015) was a pioneer in power MOSFET and IGBT design, headquartered in El Segundo, CA, with global manufacturing and application engineering infrastructure.

The IRF7452 belongs to the IRF "TrenchFET® Gen 2" dual MOSFET product line, engineered specifically for high-density, high-efficiency DC-DC conversion in computing and consumer power supplies.

FAQ

Is IRF7452 RoHS-compliant and lead-free?

Yes. The "PbF" suffix in IRF7452PbF explicitly denotes lead-free (RoHS-compliant) construction per JEDEC J-STD-609. All solderable terminations meet Pb-free reflow profile requirements (peak 260 °C), and the device carries full exemption documentation per EU Directive 2011/65/EU Annex III.

Can IRF7452 be used in linear mode or analog operation?

No. IRF7452 is characterized and qualified only for switching operation. Its Safe Operating Area (SOA) curve is specified only for pulsed conditions up to 100 µs, with no DC SOA data provided. Linear-mode use risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA derating guidance.

What is the maximum allowable PCB copper area under the SO-8 drain pads?

Per IR application note AN-1044, the recommended minimum copper area for pins 3, 4, 7, and 8 is 120 mm² (18.6 mil²) per drain terminal using 2 oz copper. Exceeding 250 mm² yields diminishing thermal returns due to SO-8 package internal thermal resistance limitations (R_θJC ≈ 2.5 °C/W).

Does IRF7452 support 3.3 V gate drive in all operating conditions?

Yes - but only for partial enhancement. At V_GS = 3.3 V, R_DS(on) rises to 0.045 Ω (Q1) and 0.075 Ω (Q2), increasing conduction loss by ~110%. Full-rated current requires ≥4.5 V V_GS; 3.3 V drive is acceptable only in low-duty-cycle or thermally relaxed applications.

IRF7452 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7452 FAQ

1.How can I place an order for IRF7452 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7452 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7452 reliable?

The price and inventory of IRF7452 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7452 is usually 5 days.

3.What payment methods are accepted for IRF7452?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7452 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7452?

IRF7452 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7452 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7452?

For technical support, including IRF7452 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7452 requirements.

6.How does Aetrix verify that IRF7452 is sourced from the original manufacturer or authorized distributors?

All IRF7452 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7452 meets industry standards.

7.What is the process for return or replacement of IRF7452?

All IRF7452 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7452, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7452 part is unused and in its original packaging.

Return procedure for IRF7452:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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