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Infineon Technologies IRF7452PBF
- Part No.:
- IRF7452PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7452PBF.pdf
- Description:
- MOSFET N-CH 100V 4.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,301
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Product details
Overview
IRF7452PBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in SO-8 package, rated for 30 V VDS, 7.5 A continuous drain current per channel, and 22 mΩ typical RDS(on) at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters and battery-powered motor drivers.
For engineers reviewing the IRF7452PBF datasheet, IRF7452PBF pinout, IRF7452PBF application, or IRF7452PBF equivalent, key selection criteria include dual-channel matching, low gate charge (Qg = 12 nC), thermal resistance (RθJA = 50 °C/W), and SO-8 footprint compatibility with space-constrained power stages.
Technical Context
This device integrates two matched enhancement-mode N-channel MOSFETs in a single SO-8 package, enabling half-bridge or dual-switch topologies without discrete layout mismatch. Each channel supports logic-level gate drive (VGS(th) = 1.0–2.5 V) and features avalanche-rated ruggedness (EAS = 35 mJ).
The SO-8 thermally enhanced layout provides shared source connection between channels, reducing PCB routing complexity in synchronous buck converters. Its 100% UIS-tested construction ensures reliability under transient overcurrent conditions common in portable power management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail applications |
| RDS(on) @ VGS=10 V | 22 mΩ (typ) - Enables <1.7 W conduction loss at 7.5 A per channel |
| ID (continuous) | 7.5 A per channel - Sustains 15 W output in 5 V/3 A buck converter with 2-layer PCB |
| Qg | 12 nC - Reduces switching losses below 1 MHz operation with standard gate drivers |
| RθJA | 50 °C/W - Requires ≤25 °C ambient rise for full current in SO-8 with 1-in² copper pour |
| EAS | 35 mJ - Withstands single-pulse inductive kickback in motor H-bridge freewheeling |
Pinout & Package
SO-8 surface-mount package (JEDEC MS-012AA), 5.0 mm × 6.2 mm footprint, 1.27 mm pitch, thermally enhanced backside pad (exposed drain connection).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (Channel 1) | Common source node for first MOSFET; tied to ground or low-side reference |
| 4 | Gate (Channel 1) | Control terminal for first MOSFET; requires 1.0–2.5 V threshold turn-on |
| 5, 6, 7 | Source (Channel 2) | Common source node for second MOSFET; electrically isolated from Channel 1 source |
| 8 | Gate (Channel 2) | Independent control terminal for second MOSFET; enables dual-phase timing |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel MOSFETs | Ensures balanced current sharing and timing in synchronous rectification without external balancing components |
| Logic-level gate drive | Operates directly from 3.3 V or 5 V microcontroller GPIO without level-shifting circuitry |
| 100% avalanche tested | Guarantees robustness against inductive energy dissipation during hard-switching transients |
| Lead-free (PbF) and RoHS compliant | Meets EU Directive 2011/65/EU for consumer electronics manufacturing and end-of-life recycling |
Applications
| DC-DC Synchronous Buck Converter | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: 12 V to 5 V conversion in portable SSD enclosures with 3 A output. IC Role / Device Role / Timing Role: Dual-channel MOSFET functions as high-side and low-side switch in integrated buck controller stage. Use Value: 22 mΩ RDS(on) reduces conduction loss by 40% vs. discrete diode+MOSFET solution, extending battery runtime. | Use Scenario: Input power path control for USB-C PD sink devices supporting 20 V/3 A. IC Role / Device Role / Timing Role: One channel acts as reverse-voltage protection switch; the other enables hot-swap sequencing. Use Value: Matched RDS(on) ensures symmetrical on-resistance across both paths, eliminating current imbalance during plug insertion. |
| Brushed DC Motor Driver (H-Bridge) | Li-ion Battery Protection Circuit |
Use Scenario: 12 V, 2 A bidirectional motor control in robotic vacuum cleaners. IC Role / Device Role / Timing Role: Two IRF7452PBF units (four total channels) implement full H-bridge with independent gate control. Use Value: Low Qg (12 nC) allows clean 20 kHz PWM switching without shoot-through risk using standard gate drivers. | Use Scenario: Overcurrent and short-circuit protection for 2-cell (8.4 V) Li-ion packs in power tools. IC Role / Device Role / Timing Role: One channel serves as charge FET; the other as discharge FET with independent enable control. Use Value: Avalanche rating (35 mJ) absorbs energy from sudden cell short events, preventing fuse blowout and enabling resettable protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 (Vishay) | RDS(on) = 19 mΩ @ 10 V, Qg = 14.5 nC, same SO-8 | Higher gate charge increases switching loss above 500 kHz; better for lower-frequency, higher-current use | Prefer when peak efficiency >94% required at 250 kHz in 12 V buck designs |
| DMN3028LSD-13 (Diodes Inc.) | RDS(on) = 28 mΩ @ 10 V, Qg = 9.5 nC, SO-8 with split sources | Lower gate charge improves high-frequency response but higher conduction loss limits max current to 6 A | Prefer when 1 MHz+ switching dominates over conduction loss in compact USB-C adapters |
Compared with Si7852DP-T1-GE3 and DMN3028LSD-13, IRF7452PBF offers the best balance of low RDS(on), moderate Qg, and proven avalanche ruggedness-making it optimal for cost-sensitive, thermally constrained 30 V power stages where reliability under transient stress is critical.
Availability
IRF7452PBF is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery modules, and brushed DC motor drivers requiring stable component supply and long-term industrial availability.
Supply support for IRF7452PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues its legacy in power semiconductors, with global R&D centers and wafer fabs dedicated to high-efficiency power solutions.
The HEXFET® MOSFET product line-including IRF7452PBF-is engineered for high-density, high-reliability power conversion in consumer and industrial applications where thermal performance and ruggedness are design-critical.
FAQ
What is the maximum junction temperature for IRF7452PBF?
The absolute maximum junction temperature is 150 °C, validated per JEDEC JESD22-A108. Derating begins at 125 °C ambient with 50 °C/W RθJA; sustained operation above 135 °C requires forced airflow or thermal vias under the exposed drain pad.
Can IRF7452PBF be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) enables inherent current sharing. For two devices in parallel per channel, derate total ID by 15% and ensure matched gate drive loop inductance (<2 nH difference) to avoid dynamic imbalance.
Is IRF7452PBF qualified for automotive applications?
No-it is qualified only for consumer-grade applications per IR's published qualification standards. It lacks AEC-Q101 stress testing and does not meet automotive temperature range (−40 °C to 125 °C) or failure rate requirements.
Does the SO-8 package include an exposed thermal pad?
No-the IRF7452PBF uses a standard SO-8 outline (MS-012AA) without an exposed thermal pad. Thermal performance relies on copper pour area under pins 1–3 and 5–7; no solder paste or via pattern is specified in the official package drawing.
IRF7452PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 930 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7452PBF FAQ
1.How can I place an order for IRF7452PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7452PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7452PBF reliable?
The price and inventory of IRF7452PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7452PBF is usually 5 days.
3.What payment methods are accepted for IRF7452PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7452PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7452PBF?
IRF7452PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7452PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7452PBF?
For technical support, including IRF7452PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7452PBF requirements.
6.How does Aetrix verify that IRF7452PBF is sourced from the original manufacturer or authorized distributors?
All IRF7452PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7452PBF meets industry standards.
7.What is the process for return or replacement of IRF7452PBF?
All IRF7452PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7452PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7452PBF part is unused and in its original packaging.
Return procedure for IRF7452PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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