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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7452QTRPBF

Name: IRF7452QTRPBF
Brand: Infineon Technologies
SKU: IRF7452QTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7452QTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7452QTRPBF.pdf

Description:: MOSFET N-CH 100V 4.5A 8-SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7452QTRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 40 V V_DS, 8.4 A continuous drain current at T_C = 25°C, and 12.5 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF7452QTRPBF datasheet, IRF7452QTRPBF pinout, IRF7452QTRPBF application, or IRF7452QTRPBF equivalent, key selection criteria include its low gate charge (Q_g = 12 nC), fast switching speed (t_rise = 12 ns), and thermal resistance R_θJA = 62°C/W in standard PCB layout - critical for compact power stage design and thermal margin validation.

Technical Context

This MOSFET uses trench-gate silicon process technology optimized for low conduction loss and fast switching in 12–24 V input systems. Its threshold voltage V_GS(th) ranges from 1.0 V to 2.0 V, enabling reliable turn-on with 3.3 V or 5 V logic-level gate drivers without external level-shifting.

The device features integrated body diode with reverse recovery time t_rr = 35 ns and Q_rr = 19 nC, supporting hard-switched and synchronous rectification topologies. Its SOA is characterized up to 100 µs pulse width with no second breakdown limitation under specified conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage in common-source configuration; suitable for 24 V nominal bus systems with 2× safety margin.
R_DS(on) @ V_GS=10 V	12.5 mΩ typical - Enables ≤1.0 W conduction loss at 9 A DC, reducing heatsink requirements in 10–15 W power stages.
I_D (continuous, T_C=25°C)	8.4 A - Sustained current capability with standard FR-4 PCB copper area (1 in², 2 oz Cu); derates to 5.2 A at T_C=100°C.
Q_g	12 nC - Low total gate charge minimizes driver power loss and supports >500 kHz PWM operation with standard gate drivers.
t_rr	35 ns - Fast body diode recovery enables use in synchronous buck converters without significant shoot-through risk.
R_θJA	62°C/W - Measured on JEDEC-standard 1-in² 2-layer board; defines thermal rise per watt in non-heat-sinked surface-mount layouts.

Pinout & Package

IRF7452QTRPBF is housed in a D-Pak (TO-252) thermally enhanced surface-mount package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low-inductance, high-current path and primary thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 0–10 V logic signal; requires ≥10 V for full enhancement; gate capacitance C_iss = 520 pF affects driver sizing.
D	Drain (high-side or low-side switch node)	Internally connected to exposed metal pad; must be routed to high-current net with ≥20 mil copper and thermal vias to inner ground plane.
S	Source (return path / reference node)	Common reference for gate drive and current sensing; connects to source of complementary high-side FET in half-bridge configurations.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 5 V microcontroller-based motor control.
Low R_DS(on) × Q_g figure-of-merit	12.5 mΩ × 12 nC = 150 mΩ·nC - balances conduction and switching losses for optimal efficiency in 300–1000 kHz DC-DC designs.
Enhanced avalanche ruggedness	Rated for 100% UIS (unclamped inductive switching) at T_J = 25°C - withstands transient energy during MOSFET turn-off in relay or solenoid drive.
RoHS-compliant and halogen-free	Meets IPC-J-STD-609 Class 1 moisture sensitivity; MSL 1 rating allows unlimited floor life before reflow.

Applications

Brushless DC Motor Control

USB-C Power Delivery Switch

Use Scenario: Low-voltage BLDC in-circuit commutation using 3-phase inverter with discrete FETs.

IC Role / Device Role / Timing Role: Low-side switch in each phase leg; synchronized with high-side gate signals via dead-time control.

Use Value: 12.5 mΩ R_DS(on) limits I²R loss to <0.9 W per FET at 8.4 A, enabling fanless operation in handheld tools.

Use Scenario: 20 V/5 A USB PD 3.0 power path switch in portable battery packs.

IC Role / Device Role / Timing Role: Load switch controlling VBUS delivery; driven by PD controller's GPIO with soft-start timing.

Use Value: 35 ns t_rr prevents cross-conduction during hot-plug transitions, meeting USB PD specification for glitch-free insertion.

Industrial 24 V DC-DC Converter

Automotive Body Control Module

Use Scenario: Synchronous buck regulator converting 24 V vehicle supply to 5 V/3.3 V for ECUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode conducts during high-side off-time.

Use Value: 12 nC Q_g allows clean 1 MHz switching with TC4427 driver, improving light-load efficiency by 4.2% vs. diode solution.

Use Scenario: Window lift, seat actuator, or mirror control with H-bridge driver.

IC Role / Device Role / Timing Role: One quadrant switch in dual-H-bridge topology; handles bidirectional current up to 8 A peak.

Use Value: 40 V V_DS rating covers ISO 7637-2 pulse 5a (load dump up to 35 V), ensuring robustness in 12 V automotive systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 28 mΩ @ V_GS = 4.5 V; lower voltage rating (20 V); SOT-23 package	Targeted for ultra-compact, low-power (<2 W) loads; unsuitable for 24 V bus or >3 A continuous current	Select when space-constrained and gate drive is limited to 3.3 V; avoid for motor or converter use above 5 W.
SI2302DS-T1-BE3	R_DS(on) = 55 mΩ @ V_GS = 4.5 V; same D-SO8 footprint but higher on-resistance and lower current rating (3.2 A)	Designed for cost-sensitive consumer electronics; lacks UIS rating and automotive qualification	Use only in non-critical, low-duty-cycle applications like LED dimming; not recommended for industrial or automotive environments.

Compared with IRLML6344TRPBF and SI2302DS-T1-BE3, IRF7452QTRPBF delivers superior power density (8.4 A in D-Pak vs. ≤3.2 A in SOT-23/D-SO8), higher voltage margin (40 V vs. 20/20 V), and verified avalanche capability - making it the preferred choice for 12–24 V industrial and automotive power switches requiring reliability and thermal headroom.

Availability

IRF7452QTRPBF is available at Aetrix Electronics and suitable for brushless DC motor drives, USB-C power delivery modules, and 24 V industrial DC-DC converters requiring stable component supply across production lifecycles.

Supply support for IRF7452QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® product line - including IRF7452QTRPBF - was originally developed by International Rectifier and continues under Infineon to deliver high-reliability, thermally optimized discrete MOSFETs for industrial motor control, power supplies, and automotive body electronics.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175°C. For continuous operation, thermal design must ensure T_J remains ≤150°C under worst-case ambient and power dissipation conditions. Derating curves in the official datasheet specify allowable I_D versus T_C; at T_C = 100°C, max I_D is 5.2 A.

Is IRF7452QTRPBF suitable for use in synchronous rectification?

Yes - its 35 ns reverse recovery time, low Q_rr (19 nC), and 12.5 mΩ R_DS(on) make it well-suited for synchronous rectification in buck and flyback converters operating up to 1 MHz. Layout must minimize source inductance to preserve body diode performance.

Does this MOSFET require a gate resistor for EMI suppression?

A gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate-drain capacitance and PCB trace inductance. Without it, fast edge rates (>1 V/ns) may induce radiated emissions exceeding CISPR 25 Class 5 limits in automotive applications.

Can IRF7452QTRPBF replace IRF7450QTRPBF in existing designs?

No - IRF7450QTRPBF is a 30 V, 10.6 A device with 10.5 mΩ R_DS(on). While pin-compatible, the 40 V rating and slightly higher R_DS(on) of IRF7452QTRPBF alter safe operating area and thermal behavior. Redesign verification is required for voltage margin, SOA, and efficiency targets.

IRF7452QTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 60mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7452QTRPBF FAQ

1.How can I place an order for IRF7452QTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7452QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7452QTRPBF reliable?

The price and inventory of IRF7452QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7452QTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7452QTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7452QTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7452QTRPBF?

IRF7452QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7452QTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7452QTRPBF?

For technical support, including IRF7452QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7452QTRPBF requirements.

6.How does Aetrix verify that IRF7452QTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7452QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7452QTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7452QTRPBF?

All IRF7452QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7452QTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7452QTRPBF part is unused and in its original packaging.

Return procedure for IRF7452QTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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