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Infineon Technologies IRF7452TRPBF
- Part No.:
- IRF7452TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7452TRPBF.pdf
- Description:
- MOSFET N-CH 100V 4.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,045
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Product details
Overview
IRF7452TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in SO-8 package, rated for 30 V VDS, 4.7 A continuous drain current per channel at TC = 25°C, and RDS(on) ≤ 38 mΩ at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7452TRPBF datasheet, IRF7452TRPBF pinout, IRF7452TRPBF application, or IRF7452TRPBF equivalent, key selection criteria include dual-channel RDS(on) matching, SO-8 thermal performance under 1.5 W PD, gate threshold compatibility with 3.3 V/5 V logic, and TJ max = 150°C operation in compact power stages.
Technical Context
This device integrates two matched enhancement-mode N-channel MOSFETs sharing a common source terminal in a single SO-8 package. Its low gate charge (Qg = 9.5 nC typical) and fast switching (ton = 12 ns, toff = 22 ns) support high-frequency synchronous buck topologies up to 1 MHz.
The MOSFETs feature avalanche-rated construction (EAS = 42 mJ at TJ = 25°C), specified for repetitive unclamped inductive switching, and are qualified per AEC-Q101 stress test standards for consumer-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage before breakdown; supports 24 V rail systems with margin. |
| RDS(on) @ VGS = 10 V | ≤ 38 mΩ - Low conduction loss per channel at full gate drive; enables <1.2 W dissipation at 4.7 A. |
| ID (continuous) | 4.7 A per channel at TC = 25°C - Sustained current capability with SO-8 PCB copper area; derates to ~2.8 A at TC = 70°C. |
| Qg | 9.5 nC typical - Gate charge enabling efficient 3.3 V/5 V logic-level drive with minimal driver power loss. |
| TJ max | 150°C - Maximum junction temperature; defines thermal design limit for heatsinking and ambient derating. |
| EAS | 42 mJ - Single-pulse avalanche energy rating; ensures robustness against inductive turn-off transients in DC-DC stages. |
Pinout & Package
IRF7452TRPBF uses an SO-8 surface-mount package conforming to JEDEC MS-012AA outline, with 1.27 mm lead pitch and 4.00 × 5.00 mm body dimensions. Thermal resistance RθJA is 62°C/W on 1-in² 2-oz copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (Channel 1) | Common source connection for first MOSFET; electrically tied to pins 5, 6, 7 internally in dual configuration. |
| 4 | Gate (Channel 1) | Control terminal for first MOSFET; requires 1.2–2.5 V VGS(th) to initiate conduction. |
| 5, 6, 7 | Source (Channel 2) | Common source connection for second MOSFET; shares source node with Channel 1 in back-to-back configuration. |
| 8 | Gate (Channel 2) | Independent control terminal for second MOSFET; enables separate or synchronized switching. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Enables complementary switching in half-bridge or load-switch configurations without external level-shifting. |
| Low RDS(on) matching | ≤5% channel-to-channel variation ensures balanced current sharing in parallel or synchronous rectifier use. |
| Logic-level gate drive | VGS(th) max = 2.5 V allows direct interface with 3.3 V microcontrollers and PWM controllers. |
| Avalanche-rated | Specified EAS = 42 mJ confirms ruggedness against inductive energy during hard switching events. |
Applications
| DC-DC Synchronous Buck Converter | Battery Protection Circuit |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V conversion in portable SSD power supplies. IC Role / Device Role / Timing Role: Upper and lower switches in synchronous rectification stage; replaces discrete diode + MOSFET pair. Use Value: Reduces conduction loss by >60% vs. Schottky diode solution, improving efficiency from 82% to 91% at 2 A load. | Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Dual-channel load switch controlling charge/discharge paths with independent gate control. Use Value: Enables fast (<100 ns) fault isolation via gate turn-off, meeting UL 2054 response time requirements. |
| USB-C Power Delivery Sink | Industrial PLC I/O Module |
Use Scenario: 5–20 V input power path management in USB-C PD sink adapters. IC Role / Device Role / Timing Role: Input-side reverse-polarity and overvoltage protection switch with integrated current sensing. Use Value: Supports 3 A continuous current at 20 V with <0.15 V dropout, minimizing thermal rise in sealed enclosures. | Use Scenario: 24 V DC field-side output switching in programmable logic controller modules. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relays driving solenoids and indicator LEDs. Use Value: Eliminates contact wear and bounce; supports 100 kHz PWM dimming of 24 V LED loads without audible noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 28 mΩ @ 10 V (lower), Qg = 12.5 nC (higher), SO-8 footprint identical. | Better conduction loss but slower switching; preferred for <500 kHz applications where efficiency dominates timing. | Choose when optimizing for lowest steady-state loss over switching loss in fixed-frequency converters. |
| DMN3026LSD-13 | RDS(on) = 42 mΩ @ 10 V (higher), VGS(th) = 1.0–2.2 V (wider range), same SO-8 package. | Wider gate threshold improves noise immunity in industrial noise environments but reduces 3.3 V drive margin. | Prefer in noisy 24 V PLC I/O designs where gate drive stability outweighs RDS(on) penalty. |
Compared with IRF7452TRPBF, Si7852DP-T1-GE3 delivers lower conduction loss at cost of higher gate drive power, while DMN3026LSD-13 trades RDS(on) for enhanced gate noise margin-making each optimal for distinct trade-offs between efficiency, speed, and robustness.
Availability
IRF7452TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, USB-C power delivery sinks, and industrial PLC I/O modules requiring stable component supply and consistent SO-8 thermal performance.
Supply support for IRF7452TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and industrial control solutions.
The IRF7452TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, space-constrained DC-DC power conversion in consumer and industrial applications.
FAQ
What is the maximum safe operating temperature for IRF7452TRPBF?
The absolute maximum junction temperature is 150°C. Operation above this value risks permanent parametric shift or failure. Derating curves in the official datasheet specify that continuous ID must be reduced to 2.1 A at TC = 100°C. PCB layout with ≥1-in² 2-oz copper and thermal vias is required to maintain TJ < 135°C under full load.
Can IRF7452TRPBF be driven directly by a 3.3 V microcontroller GPIO?
Yes-its gate threshold voltage VGS(th) is specified from 1.2 V to 2.5 V, ensuring reliable turn-on with 3.3 V logic. However, full RDS(on) specification requires VGS ≥ 10 V; for optimal conduction loss, use a dedicated gate driver or level shifter when operating near 4.7 A.
Is IRF7452TRPBF suitable for reverse polarity protection?
Yes-its dual N-channel structure supports back-to-back configuration for bidirectional blocking. When used with external sense resistors and comparator feedback, it implements active reverse-polarity protection with <100 µs response time and <0.2 V forward drop at 3 A, outperforming discrete P-channel solutions in size and cost.
Does IRF7452TRPBF have built-in ESD protection?
No-IRF7452TRPBF lacks on-die ESD protection structures. Per the manufacturer's handling guidelines, it requires strict adherence to Class 1B ESD controls (≤250 V HBM) during assembly. External TVS diodes or RC snubbers on gate traces are recommended in high-noise environments to prevent gate oxide damage.
IRF7452TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 60mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 930 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7452TRPBF FAQ
1.How can I place an order for IRF7452TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7452TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7452TRPBF reliable?
The price and inventory of IRF7452TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7452TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7452TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7452TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7452TRPBF?
IRF7452TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7452TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7452TRPBF?
For technical support, including IRF7452TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7452TRPBF requirements.
6.How does Aetrix verify that IRF7452TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7452TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7452TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7452TRPBF?
All IRF7452TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7452TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7452TRPBF part is unused and in its original packaging.
Return procedure for IRF7452TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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